[특허]PECVD silicon nitride for etch stop mask and ozone TEOS pattern sensitivity elimination

[미국특허] PECVD silicon nitride for etch stop mask and ozone TEOS pattern sensitivity elimination 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/465
출원번호	US-0606955 (1996-02-26)
발명자 / 주소	Yu Chen-Hua (Keelung TWX) Jang Syun-Ming (Hsin-chu TWX)
출원인 / 주소	Taiwan Semiconductor Manufactured Company Ltd. (Hsin-chu TWX 03)
인용정보	피인용 횟수 : 57 인용 특허 : 0

초록 ▼

This invention provides a method for forming dense electrode patterns having a high aspect ratio in a conductor metal layer. The method uses silicon nitride deposited using plasma enhanced chemical vapor deposition, PECVD, as an etch stop mask to protect the conductor metal and anti reflection coating when etching the electrode patterns. The PECVD silicon nitride is also used a mask to eliminate pattern dependence when forming inter-metal dielectric layers. The PECVD silicon nitride is also used as an etch stop mask when forming vias in the inter-metal dielectric for electrical conduction between electrode pattern layers.

대표청구항 ▼

A method of forming electrode patterns, comprising the steps of: providing an integrated circuit element having devices formed therein; providing a base dielectric layer formed on said integrated circuit element; forming a conductor metal layer on said base dielectric layer; forming an antireflection material layer on said conductor metal layer, wherein said antireflection material is titanium nitride; forming a silicon nitride etch stop layer on said antireflection material layer; forming a photoresist layer on said silicon nitride etch stop layer; forming an electrode pattern in said photoresist using photolithographic techniques; forming said electrode pattern in said silicon nitride etch stop layer by means of anisotropic dry etching using said electrode pattern formed in said photoresist as a mask and a first etchant; forming said electrode pattern in said antireflection material by means of anisotropic dry etching using said electrode pattern formed in said photoresist and said electrode pattern formed in said silicon nitride etch stop layer as a mask and BCl3+Cl2 as an etchant; forming said electrode pattern in said conductor metal by means of anisotropic dry etching using said electrode pattern formed in said photoresist and said electrode pattern formed in said silicon nitride etch stop layer as a mask and a third etchant; removing said electrode pattern formed in said photoresist; and forming an inter-metal dielectric layer over said integrated circuit element covering said electrode pattern formed in said silicon nitride, said electrode pattern formed in said antireflection material, said electrode pattern formed in said conductor metal, and said base dielectric layer.

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A	생활필수품
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A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] PECVD silicon nitride for etch stop mask and ozone TEOS pattern sensitivity elimination 원문보기