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Semiconductor device formed using a catalyst element capable of promoting crystallization 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H07L-029/184
출원번호 US-0592513 (1996-01-26)
우선권정보 JP-0346714 (1993-12-22)
발명자 / 주소
  • Miyanaga Akiharu,JPX
  • Ohtani Hisashi,JPX
  • Takemura Yasuhiko,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Sixbey, Friedman, Leedom & Ferguson, P.C.Ferguson, Jr.
인용정보 피인용 횟수 : 252  인용 특허 : 0

초록 ▼

A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which t

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising at least first and second thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film added with a catalyst for promoting a crystallization thereof, wherein a concentration of

이 특허를 인용한 특허 (252)

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  138. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
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  141. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
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  145. Nakamura, Osamu; Kajiwara, Masayuki; Yamazaki, Shunpei; Ohnuma, Hideto, Semiconductor device and manufacturing method of the same.
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  159. Akiharu Miyanaga JP; Hisashi Ohtani JP; Satoshi Teramoto JP, Semiconductor device and method for manufacturing the same.
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  160. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
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  161. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
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  166. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  170. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
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  172. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  174. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
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  175. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
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  176. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
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  177. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.
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  179. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
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  183. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
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  184. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
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  185. Hamada, Takashi; Murakami, Satoshi; Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Takayama, Toru, Semiconductor device and method of manufacturing the same.
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  186. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.
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  187. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.
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  188. Shunpei Yamazaki JP, Semiconductor device and method of manufacturing the same.
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  189. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
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  190. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
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  191. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.
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  196. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and semiconductor display device.
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  197. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and semiconductor display device.
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  200. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and semiconductor display device.
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  201. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
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  202. Kato,Kiyoshi; Takayama,Toru; Maruyama,Junya; Goto,Yuugo; Ohno,Yumiko, Semiconductor device comprising a light emitting element and a light receiving element.
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  203. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
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  204. Yamazaki,Shunpei; Kato,Kiyoshi; Arai,Yasuyuki; Akiba,Mai, Semiconductor device for performing the transmission of a signal in the relevant device by means of an optical interconnect.
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  205. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.
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  206. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
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  207. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.
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  208. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
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  209. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
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  210. Zhang, Hongyong; Kusumoto, Naoto, Semiconductor device having a thin film transistor.
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  211. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
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  212. Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Teramoto Satoshi,JPX, Semiconductor device having doped polycrystalline layer.
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  213. Ohtani, Hisashi; Takano, Tamae; Kokubo, Chiho, Semiconductor device method of manufacturing.
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  214. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.
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  215. Honda, Tatsuya, Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element.
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  216. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.
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  217. Shunpei Yamazaki JP; Jun Koyama JP, Semiconductor display device correcting system and correcting method of semiconductor display device.
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  218. Yamazaki, Shunpei; Koyama, Jun, Semiconductor display device correcting system and correcting method of semiconductor display device.
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  219. Yokoi, Tomokazu; Inoue, Takayuki; Furuno, Makoto, Semiconductor film, method for manufacturing the same, and power storage device.
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  220. Yokoi, Tomokazu; Inoue, Takayuki; Furuno, Makoto, Semiconductor film, method for manufacturing the same, and power storage device.
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  221. Kato,Kiyoshi, Semiconductor integrated circuit and design method thereof.
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  222. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
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  223. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
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  224. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
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  225. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.
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  226. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.
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  227. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Mitsuki Toru,JPX ; Miyanaga Akiharu,JPX ; Ogata Yasushi,JPX, Semiconductor thin film and semiconductor device.
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  228. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
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  229. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
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  230. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
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  231. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Miyanaga,Akiharu; Ogata,Yasushi, Semiconductor thin film and semiconductor device.
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  232. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Semiconductor thin film, semiconductor device and manufacturing method thereof.
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  233. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
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  234. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
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  235. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
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  236. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
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  237. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.
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  238. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
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  239. Takemura, Yasuhiko; Konuma, Toshimitsu, Thin film semiconductor integrated circuit and method for forming the same.
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  240. Horikoshi, Kazuhiko; Ogata, Klyoshi; Tamura, Takuo; Nakahara, Miwako; Ohkura, Makoto; Oritsuki, Ryoji; Nakano, Yasushi; Shiba, Takeo, Thin film transistor and method for manufacturing the same.
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  241. Yamazaki,Shunpei; Koyama,Jun, Thin film transistor display device with integral control circuitry.
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  242. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.
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  243. Ohtani Hisashi,JPX, Thin film transistor, having a nitride film on the gate insulation layer and an organic resin interlayer film on the transistor.
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  244. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
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  245. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
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  246. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.
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  247. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
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  248. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
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  249. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
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  250. Sung Chae Gee,JPX, Thin-film transistor, a method for manufacturing same, and a liquid crystal display device using the transistor.
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  251. Meng, Zhiguo; Wong, Man; Kwok, Hoi Sing, Transflective liquid crystal device and method of manufacturing the same.
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  252. Hisashi Ohtani JP, Transistor with variable channel width.
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