초록 ▼

A bonding pad structure for a semiconductor integrated circuit permits miniaturization of the bonding pad size by utilizing an opening in an overlying insulating layer to an exposed surface of an underlying multi-layer, interconnecting wiring of the integrated circuit, constituting a bonding pad for

A bonding pad structure for a semiconductor integrated circuit permits miniaturization of the bonding pad size by utilizing an opening in an overlying insulating layer to an exposed surface of an underlying multi-layer, interconnecting wiring of the integrated circuit, constituting a bonding pad for exposure to wire bonding. As a result, miniaturization of bonding pad size can be accommodated with integrated circuit scale reduction while maintaining good bonding adhesion strength at the bonding pad for subsequent wiring bonding.

대표청구항 ▼

[ What is claimed is:] [1.] A bonding pad structure for receiving and electrically connecting an external bonding conductor to a contact area of a circuit element formed on a substrate of a semiconductor integrated circuit, comprising:a first insulating layer patterned over the semiconductor integra

[ What is claimed is:] [1.] A bonding pad structure for receiving and electrically connecting an external bonding conductor to a contact area of a circuit element formed on a substrate of a semiconductor integrated circuit, comprising:a first insulating layer patterned over the semiconductor integrated circuit substrate surrounding the circuit element contact area;a hard metal conductive layer formed directly on said first insulating layer and electrically connected to the circuit element contact area, said hard metal layer having a substantially uniform, predetermined thickness;a soft metal conductive layer formed on and extending contiguously with said hard metal conductive layer and electrically connected to the circuit element contact area via said hard metal conductive layer said soft metal conductive layer having a relative thickness at least 1.5 times greater than the predetermined thickness of said hard metal conductive layer; anda second insulating layer patterned over said soft metal conductive layer, said second insulating layer defining an opening terminating at an upper surface of said soft metal conductive layer for receiving the external bonding conductor, wherein the external bonding conductor directly bonds to at least one of said hard metal and soft metal conductive layers and electrically connects with the circuit element contact area even when said soft metal conductive layer has been deformed during testing.