[특허]Multi-layer magnetic tunneling junction memory cells

Multi-layer magnetic tunneling junction memory cells 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G11C-011/15
출원번호	US-0711751 (1996-09-10)
발명자 / 주소	Zhu Xiaodong T. Goronkin Herbert Tehrani Saied N.
출원인 / 주소	Motorola, Inc.
대리인 / 주소	Parsons
인용정보	피인용 횟수 : 128 인용 특허 : 0

초록 ▼

A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.

대표청구항 ▼

[ What is claimed is:] [1.] A multi-state, multi-layer magnetic memory cell comprising:a substrate having a surface;a first electrically conductive portion positioned adjacent the surface of the substrate;a first layer of magnetic material supported on the substrate in electrical contact with the first electrically conductive portion;a layer of insulating material positioned on the first layer of magnetic material;a second layer of magnetic material positioned on the layer of insulating material;a second electrically conductive portion positioned in electrical contact with the second layer of magnetic material, the first layer of magnetic material, the layer of insulating material and the second layer of magnetic material forming a multi-layer magnetic memory cell with the first and second electrically conductive portions forming a sense line through the cell; andan electrically conductive word line positioned adjacent the multi-layer magnetic memory cell so as to provide a magnetic field, when the word line is activated, to at least partially switch magnetic vectors in one of the first and second layers of magnetic material from a first direction along a length of the one to a second, opposite direction, along the length of the one.

이 특허를 인용한 특허 (128)

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A	생활필수품
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