초록 ▼

A package for relatively high power transistors including heat conducting mounting flange having a relatively large "footprint" relative to the area covered by at least one active chip supported thereby and comprised of a plurality of bipolar silicon-carbide transistors. The transistors are located

A package for relatively high power transistors including heat conducting mounting flange having a relatively large "footprint" relative to the area covered by at least one active chip supported thereby and comprised of a plurality of bipolar silicon-carbide transistors. The transistors are located on a dielectric substrate brazed to the flange. A plurality of screw mounting holes, preferably eight in number, are included in the mounting flange adjacent the outer edge of the dielectric substrate so as to surround the chip. Mounting screws in the eight mounting holes together with a relatively large flange/ground plane interface significantly improves heat dissipation for the heat generated by the silicon carbide transistors by promoting radial heat spreading through the heat conductive metal flange.

대표청구항 ▼

[ I claim:] [1.] A package for relatively high power heat generating semiconductor devices, comprising:a heat conductive metal flange having a bottom side providing a ground plane contact interface having a heat transfer area for ground plane dissipation of device generated heat;a dielectric substra

[ I claim:] [1.] A package for relatively high power heat generating semiconductor devices, comprising:a heat conductive metal flange having a bottom side providing a ground plane contact interface having a heat transfer area for ground plane dissipation of device generated heat;a dielectric substrate having a metallic upper surface; a bottom surface of the said substrate bonded to a top surface of said metal flange;at least one heat generating semiconductor device located on the metallic upper surface of said substrate and generating heat over an active device surface area to be dissipated to said substrate;input and output circuit means coupled to said semiconductor device; anda set of ground plane mounting holes provided in said metal flange and surrounding said at least one semiconductor device, the number of said mounting holes and the ratio of the flange heat transfer area to the device active area being such that the resulting interface contact pressure caused by ground plane securing elements and the resulting interface temperature drop enable sufficient heat dissipation for the semiconductor devices to be silicon carbide transistors or other semiconductor devices substantially equivalent to such transistors in heat generation.