초록 ▼

A layer of sacrificial, chemically reactive material is formed as part of the fabrication process of an integrated circuit, and covers active circuitry to protect it from reaction with hydrogen. Integrated circuits and fabrication methods are provided by the present invention. The present invention

A layer of sacrificial, chemically reactive material is formed as part of the fabrication process of an integrated circuit, and covers active circuitry to protect it from reaction with hydrogen. Integrated circuits and fabrication methods are provided by the present invention. The present invention is used to fabricate integrated circuits such as ferroelectric memories, and the like, using die or substrates containing one or more sacrificial layers of strontium bismuth niobate tantalate, for example. The sacrificial layers consume atmospheric hydrogen or other materials that otherwise would react with active circuitry of the integrated circuits and render them ineffective.

대표청구항 ▼

[ What is claimed is:] [1.] A method of protecting an integrated circuit containing ferroelectric materials from reaction with hydrogen, said method comprising the steps of:providing a substrate;fabricating active circuitry on the substrate wherein the active circuitry contains ferroelectric materia

[ What is claimed is:] [1.] A method of protecting an integrated circuit containing ferroelectric materials from reaction with hydrogen, said method comprising the steps of:providing a substrate;fabricating active circuitry on the substrate wherein the active circuitry contains ferroelectric materials;covering the active circuitry with a sacrificial continuous layer of material that reacts with and is consumed by hydrogen whereby the hydrogen is prevented from reacting with the ferroelectric materials of the active circuitry.