$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

[미국특허] Sensors for a linear polisher 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-049/00
  • B24B-051/00
출원번호 US-0797470 (1997-02-06)
발명자 / 주소
  • Pant Anil K.
  • Breivogel Joseph R.
  • Young Douglas W.
  • Jairath Rahul
  • Engdahl Erik H.
출원인 / 주소
  • Lam Research Corporation
대리인 / 주소
    Kidd & Booth, LLP
인용정보 피인용 횟수 : 115  인용 특허 : 13

초록

A technique for utilizing sensors to monitor the polishing of a semiconductor wafer when a linear polisher is utilized to polish the wafer. The sensors are distributed along the surface or are coupled to openings along the surface to monitor the on-going polishing process. The sensed information fro

대표청구항

[ We claim:] [1.] In a tool utilized to polish a material having a planar surface and in which said planar surface is placed upon a polishing pad for polishing said planar surface, an apparatus for determining a polishing force exerted onto said planar surface comprising:a platen disposed along an u

이 특허에 인용된 특허 (13) 인용/피인용 타임라인 분석

  1. Yu Chris C. (Boise ID) Sandhu Gurtej S. (Boise ID), Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection.
  2. Rostoker, Michael D., Detecting the endpoint of chem-mech polishing, and resulting semiconductor device.
  3. Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT), Device and method for detecting an end point in polishing operation.
  4. Cote William J. (Poughquag NY) Cronin John E. (Milton VT) Hill William R. (Underhill VT) Hoffman Cheryl A. (Colchester VT), Endpoint detection apparatus and method for chemical/mechanical polishing.
  5. Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT), In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection.
  6. Miller Gabriel L. (Westfield NJ) Wagner Eric R. (South Plainfield NJ), In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection.
  7. Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY), In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing.
  8. Nakata Tomohiro (Kanagawa JPX), Method and apparatus for burnishing magnetic disks.
  9. Schultz Laurence D. (Boise ID), Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer.
  10. Sandhu, Gurtej S.; Schultz, Laurence D.; Doan, Trung T., Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers.
  11. Morioka Izuru (Tokyo JPX) Kuwano Kenji (Tokyo JPX), Polishing apparatus.
  12. Talieh Homayoun (San Jose CA) Weldon David E. (Los Gatos CA) Nagorski Boguslaw A. (San Jose CA), Wafer polishing machine with fluid bearings.
  13. Weldon David E. (Los Gatos CA) Nagorski Boguslaw A. (San Jose CA) Talieh Homayoun (San Jose CA), Wafer polishing machine with fluid bearings and drive systems.

이 특허를 인용한 특허 (115) 인용/피인용 타임라인 분석

  1. Talieh, Homayoun; Basol, Bulent M., Advanced chemical mechanical polishing system with smart endpoint detection.
  2. Talieh,Homayoun; Basol,Bulent M., Advanced chemical mechanical polishing system with smart endpoint detection.
  3. Wang, Yuchun; Frey, Bernard M.; Basol, Bulent M.; Talieh, Homayoun; Young, Douglas W.; McGrath, Brett E.; Desai, Mukesh; Velazquez, Efrain; Truong, Tuan, Advanced chemical mechanical polishing system with smart endpoint detection.
  4. Kistler, Rodney C., Afferent-based polishing media for chemical mechanical planarization.
  5. Mike Ravkin ; Katrina Mikhaylich ; Don E. Anderson, Apparatus and method for conditioning a fixed abrasive polishing pad in a chemical mechanical planarization process.
  6. Walters, Joseph W.; Kneer, Emil; Cooper, Eric; Grizzard, Richard, Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process.
  7. Gotkis,Yehiel; Lim,Danny, Apparatus and method for controlling fluid material composition on a polishing pad.
  8. Thornton Brian ; Nagengast Andrew J. ; Boehm ; Jr. Robert G. ; Pant Anil K. ; Krusell Wilbur C., Apparatus and method for performing end point detection on a linear planarization tool.
  9. Boyd, John M.; Mikhaylich, Katrina; Ravkin, Mike, Apparatus and method for qualifying a chemical mechanical planarization process.
  10. John M. Boyd ; Katrina Mikhaylich ; Mike Ravkin, Apparatus and method for qualifying a chemical mechanical planarization process.
  11. Daniel David W. ; Gregory John W. ; Allman Derryl D. J., Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance.
  12. Birang Manoocher ; Rosenberg Lawrence M. ; Somekh Sasson ; White John M, Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet.
  13. Manoocher Birang ; Lawrence M. Rosenberg ; Sasson Somekh ; John M. White, Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet.
  14. Birang, Manoocher; Scales, Martin; Robinson, Karl M., Apparatus and methods for chemical mechanical polishing with an incrementally advanceable polishing sheet.
  15. Taravade Kunal N., Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method.
  16. Cheek Roger W. ; Cronin John E. ; Nadeau Douglas P. ; Rutten Matthew J. ; Wright Terrance M., CMP polishing pad backside modifications for advantageous polishing results.
  17. Lacy, Michael S.; Boyd, John M., Chemical mechanical planarization belt assembly and method of assembly.
  18. Wu, Ken; Jiang, Yuntao; Yang, Jun, Chemical mechanical polishing (CMP) apparatus and method.
  19. Birang, Manoocher; Rosenberg, Lawrence M; Sandra L. Rosenberg,; Somekh, Sasson R; White, John M, Chemical mechanical polishing apparatus with rotating belt.
  20. Birang,Manoocher; Rosenberg, legal representative,Sandra L.; Somekh,Sasson; White,John M; Rosenberg, deceased,Lawrence M., Chemical mechanical polishing apparatus with rotating belt.
  21. Birang,Manoocher; Rosenberg,Lawrence M.; Somekh,Sasson; White,John M., Chemical mechanical polishing apparatus with rotating belt.
  22. John M. White, Chemical mechanical polishing with a moving polishing sheet.
  23. White John M., Chemical mechanical polishing with a plurality of polishing sheets.
  24. Tietz James V., Chemical mechanical polishing with a polishing sheet and a support sheet.
  25. Karl M. Robinson ; Chris Chang Yu, Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers.
  26. Robinson Karl M. ; Yu Chris Chang, Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers.
  27. Berman, Michael J., Determination of film thickness during chemical mechanical polishing.
  28. Desai, Mukesh; Wang, Yuchun; Velazquez, Efrain, Endpoint detection for non-transparent polishing member.
  29. Gail D. Shelton ; Gayle W. Miller, Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.
  30. Shelton Gail D. ; Miller Gayle W., Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.
  31. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.
  32. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.
  33. Dabral, Sanjay; Pant, Anil K., Fabrication of an ion exchange polish pad.
  34. David E. Weldon ; Shu-Hsin Kao ; Tim H. Huynh, Hydrostatic fluid bearing support with adjustable inlet heights.
  35. Redeker Fred C. ; Birang Manoocher ; Li Shijian ; Somekh Sasson, In-situ monitoring of linear substrate polishing operations.
  36. Redeker, Fred C.; Birang, Manoocher; Li, Shijian; Somekh, Sasson, In-situ monitoring of linear substrate polishing operations.
  37. Tzeng Huey-Ming, In-situ monitoring of polishing pad wear.
  38. Pant Anil K. ; Jairath Rahul ; Mishra Kamal ; Chadda Saket ; Krusell Wilbur C., Integrated pad and belt for chemical mechanical polishing.
  39. Pant, Anil K.; Jairath, Rahul; Mishra, Kamal; Chadda, Saket; Krusell, Wilbur C., Integrated pad and belt for chemical mechanical polishing.
  40. Franklin, Timothy J.; Marohl, Dan A., Integrated platen assembly for a chemical mechanical planarization system.
  41. Franklin, Timothy J.; Marohl, Dan A., Integrated platen assembly for a chemical mechanical planarization system.
  42. Redeker, Fred C.; Birang, Manoocher; Li, Shijian; Somekh, Sasson, Linear polishing sheet with window.
  43. Redeker,Fred C.; Birang,Manoocher; Li,Shijian; Somekh,Sasson, Linear polishing sheet with window.
  44. Krusell, Wilbur; Travis, Glenn; Engdahl, Erik; Bagley, James, Linear reciprocating disposable belt polishing method and apparatus.
  45. Wilbur Krusell ; Glenn Travis ; Erik Engdahl ; James Bagley, Linear reciprocating disposable belt polishing method and apparatus.
  46. de la Llera, Anthony; Pham, Xuyen; Siu, Andrew; Nguyen, Tuan A.; Luong, Tony, Method and apparatus for applying downward force on wafer during CMP.
  47. Ben Mooring ; Wilbur Krusell ; Glenn Travis ; Erik Engdahl, Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed.
  48. Travis Glenn ; Pena Christopher, Method and apparatus for chemically-mechanically polishing semiconductor wafers.
  49. Boyd, John M., Method and apparatus for conditioning a polishing pad.
  50. Boyd, John M., Method and apparatus for conditioning a polishing pad.
  51. Lacy, Michael S., Method and apparatus for conditioning a polishing pad with sonic energy.
  52. Radman, Allan M.; Jensen, Alan J.; Treichel, Helmuth; Boehm, Robert G.; Lacy, Michael S.; Dunton, Eric A., Method and apparatus for conditioning a polishing pad with sonic energy.
  53. Renteln, Peter; Jensen, Alan J.; Lamb, David S., Method and apparatus for conditioning fixed-abrasive polishing pads.
  54. Jensen, Alan J.; Stella, Mario; Zhao, Eugene; Renteln, Peter; Farber, Jeffrey, Method and apparatus for controlling CMP pad surface finish.
  55. Jensen, Alan J.; Stella, Mario; Zhao, Eugene; Renteln, Peter; Farber, Jeffrey, Method and apparatus for controlling CMP pad surface finish.
  56. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.
  57. Derryl D. J. Allman ; David W. Daniel ; John W. Gregory, Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.
  58. Allman Derryl D. J. ; Daniel David W. ; Chisholm Michael F., Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer.
  59. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a polishing endpoint based upon infrared signals.
  60. Taravade Kunal N., Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer.
  61. Miller Gayle W. ; Chisholm Michael F., Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer.
  62. Dabral, Sanjay; Pant, Anil K., Method and apparatus for electrodialytic chemical mechanical polishing and deposition.
  63. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  64. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  65. John M. Boyd ; Michael S. Lacy, Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  66. Boyd, John M., Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path.
  67. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
  68. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
  69. Pecen Jiri ; Chadda Saket ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
  70. Pecen, Jiri; Chadda, Saket; Jairath, Rahul; Krusell, Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
  71. Pecen Jiri ; Fielden John ; Chadda Saket ; LaComb ; Jr. Lloyd J. ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing.
  72. Gregory, John, Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom.
  73. John Gregory, Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom.
  74. Herb, John D.; Teeny, Ned W.; Schultz, Stephen C., Method and apparatus for sensing a wafer in a carrier.
  75. Boehm ; Jr. Robert G. ; Pant Anil K. ; Krusell Wilbur C. ; Engdahl Erik H., Method and apparatus for stabilizing the process temperature during chemical mechanical polishing.
  76. Dabral, Sanjay; Pant, Anil K., Method and apparatus to recondition an ion exchange polish pad.
  77. Cone, Michael, Method and system for measuring the dynamic response of a structure during a machining process.
  78. Miller Gayle W. ; Shelton Gail D. ; Chisholm Brynne K., Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie.
  79. Keller Kevin A. ; Whitman ; Jr. Gerald A., Method of determining performance characteristics of polishing pads.
  80. Inose Toshio,JPX ; Isono Jun,JPX, Method of manufacturing nozzle plate of inkjet printer head.
  81. Marshall, Brian, Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates.
  82. Marshall, Brian, Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates.
  83. Marshall,Brian, Methods for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates.
  84. Scott E. Moore, Methods of polishing microelectronic substrates, and methods of polishing wafers.
  85. Moore Scott E., Microelectronic substrate polishing systems, semiconductor wafer polishing systems, methods of polishing microelectronic substrates, and methods of polishing wafers.
  86. Case Christopher J. ; Case Carlye B., Mobius strip belt for linear CMP tools.
  87. Anderson H. Alexander ; Can Linh X. ; Cheng Tsungnan ; Kwong Garry K. ; Hu Albert ; Chen David ; Lee Shu-Wong S., Modular wafer polishing apparatus and method.
  88. White, John M.; Sommer, Phillip R.; Fisher, Stephen, Planarization system with multiple polishing pads.
  89. Schultz,Stephen C.; Herb,John D.; Marquardt,Dave, Platen and manifold for polishing workpieces.
  90. Li, Shijian; Birang, Manoocher; Emami, Ramin; Nagengast, Andrew; Brown, Douglas Orcutt; Wang, Shi-Ping; Scales, Martin; White, John, Platen for retaining polishing material.
  91. Kiermasz,Adrian; Saldana,Miguel A., Platen with diaphragm and method for optimizing wafer polishing.
  92. Tsujimura, Manabu; Kimura, Norio, Polishing apparatus.
  93. Phillip R. Sommer ; Paul B. Butterfield, Polishing media stabilizer.
  94. Sommer,Phillip R.; Butterfield,Paul, Polishing media stabilizer.
  95. Sommer,Phillip R.; Butterfield,Paul D., Polishing media stabilizer.
  96. Weldon David E. ; Kao Shu-Hsin ; Huynh Tim H., Polishing method using a hydrostatic fluid bearing support having fluctuating fluid flow.
  97. Weldon David E. ; Kao Shu-Hsin ; Huynh Tim H., Polishing system including a hydrostatic fluid bearing support.
  98. Weldon David E. ; Kao Shu-Hsin ; Huynh Tim H., Polishing system including a hydrostatic fluid bearing support.
  99. Weldon, David E.; Kao, Shu-Hsin; Huynh, Tim H., Polishing system including a hydrostatic fluid bearing support.
  100. Chen, Hung Chih; Zuniga, Steven M.; Garretson, Charles C.; Osterheld, Thomas H.; Ko, Sen-Hou; Salek, Mohsen, Profile control platen.
  101. Chen,Hung Chih; Zuniga,Steven M.; Garretson,Charles C.; Osterheld,Thomas H.; Ko,Sen Hou; Salek,Mohsen, Profile control platen.
  102. Christopher H. Raeder, Rotary chemical-mechanical polishing apparatus employing multiple fluid-bearing platens for semiconductor fabrication.
  103. Kao Shu-Hsin ; Lapson William F. ; Regan Charles J. ; Weldon David E., Seal for polishing belt center support having a single movable sealed cavity.
  104. Miyaji Akira,JPX ; Arai Takashi,JPX ; Yagi Takeshi,JPX, Semiconductor wafer polishing apparatus.
  105. Armstrong,Richard, Single sensor press system.
  106. Hirokawa, Kazuto; Kobayashi, Yoichi; Nakai, Shunsuke; Ohta, Shinrou; Tsukuda, Yasuo, Substrate polishing apparatus.
  107. Hirokawa,Kazuto; Kobayashi,Yoichi; Nakai,Shunsuke; Ohta,Shinro; Tsukuda,Yasuo, Substrate polishing apparatus.
  108. Taylor,Travis R.; Yi,Jingang; Norton,Peter Richard, System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing.
  109. Watanabe Katsuhide,JPX ; Ogata Akira,JPX ; Sakata Fumihiko,JPX, System for detecting the endpoint of the polishing of a semiconductor wafer by a semiconductor wafer polisher.
  110. Kao Shu-Hsin ; Chang Shou-sung ; Tzeng Huey M. ; Lee Gregory C. ; Simon Greg ; Lee Harry ; Weldon David E. ; Kwong Garry ; Lapson William F. ; Appel Gregory A. ; Mok Peter, Temperature regulation in a CMP process.
  111. Krusell Wilbur C. ; Nagengast Andrew J. ; Pant Anil K., Use of zeta potential during chemical mechanical polishing for end point detection.
  112. Jayakumar Gurusamy ; Gee Sun Hoey, Using a purge gas in a chemical mechanical polishing apparatus with an incrementally advanceable polishing sheet.
  113. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
  114. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
  115. Can Linh X. ; Lum Kelvin ; Appel Gregory A., Wafer polishing head drive.

활용도 분석정보

상세보기
다운로드
내보내기

활용도 Top5 특허

해당 특허가 속한 카테고리에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.

섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로