[특허]Aluminum nitride body having graded metallurgy

Aluminum nitride body having graded metallurgy 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	B22F-003/00
출원번호	US-0657259 (1996-06-03)
발명자 / 주소	Casey Jon Alfred Cordero Carla Natalia Fasano Benjamin Vito Goland David Brian Hannon Robert Harris Jonathan H. Herron Lester Wynn Johnson Gregory Marvin Patel Niranjan Mohanlal Rei
출원인 / 주소	The Carborundum Company
대리인 / 주소	Blecker
인용정보	피인용 횟수 : 7 인용 특허 : 21

초록 ▼

Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

대표청구항 ▼

[ What is claimed is:] [1.] An aluminum nitride sintered body having graded metallurgy comprising:an aluminum nitride sintered body having at least one via therein; andgraded metallurgy on said sintered body and in direct contact with said at least one via, said graded metallurgy comprising a first layer of metallurgy in direct contact with said sintered body and a second layer of metallurgy in direct contact with, and that completely covers, said first layer of metallurgy;said first layer of metallurgy comprising 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent of a metal selected from the group consisting of tungsten, molybdenum and mixtures thereof;said second layer of metallurgy comprising 90 to 100 volume percent of a metal selected from the group consisting of tungsten, molybdenum and mixtures thereof and 0 to 10 volume percent of aluminum nitride.

이 특허에 인용된 특허 (21)

Casey Jon A. (Poughkeepsie NY) Cordero Carla N. (Wappingers Falls NY) Fasano Benjamin V. (New Windsor NY) Goland David B. (Croton NY) Hannon Robert (Wappingers Falls NY) Harris Jonathan H. (Scotsdale, Aluminum nitride body having graded metallurgy.
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Horiuchi Michio (Koshoku JPX) Harayama Yoichi (Nagano JPX) Takeuchi Yukiharu (Nagano JPX), Aluminum nitride circuit board.
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Horiguchi Akihiro (Yokohama JPX) Kasori Mituo (Kawasaki JPX) Ueno Fumio (Kawasaki JPX) Sato Hideki (Yokohama JPX) Mizunoya Nobuyuki (Yokohama JPX) Endo Mitsuyoshi (Yamato JPX) Tanaka Shun-ichiro (Yok, Aluminum nitride sintered body having conductive metallized layer.
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Iyogi Kiyoshi (Kawasaki JPX) Nakahashi Masako (Tokyo JPX) Takeda Hiromitsu (Tokyo JPX) Shirokane Makoto (Tokyo JPX), Brazing paste for bonding metal and ceramic.
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Panicker Ramachandra M. P. (Camarillo CA) Agarwal Anil K. (Poway CA), Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same.
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Credle Kenneth (Highland Park IL) Wolf Christopher G. (Beach Park IL) McConnell John (Zion IL), Ceramic substrates with highly conductive metal vias.
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Sato Hideki (Yokohama JPX) Mizunoya Nobuyuki (Yokohama JPX) Asai Hironori (Kawasaki MA JPX) Anzai Kazuo (Worcester MA) Hatano Tsuyoshi (Yokohama JPX), Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it.
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Okuno Akiyasu (Kani JPX) Watanabe Masakazu (Nagoya JPX) Ikoma Kazuhiko (Komaki JPX), Composite layer aluminum nitride base sintered body.
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Okuno Akiyasu (Kani JPX) Watanabe Masakazu (Nagoya JPX) Ikoma Kazuhiko (Komaki JPX), Composite layer aluminum nitride base sintered body.
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Panicker Ramachandra M. P. (Camarillo CA), Fine-pitch chip carrier.
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Neugebauer ; deceased Constantine A. (late of Schenectady NY by Martha M. Neugebauer ; executrix) Wojnarowski Robert J. (Ballston Lake NY), Hermetically sealed packaged electronic system.
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Harada Shigeki (Kawasaki JPX) Sugimoto Masahiro (Yokosuka JPX), Metallization layer structure formed on aluminum nitride ceramics and method of producing the metallization layer struct.
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Kato Takeyuki (Aichi JPX) Yoneda Yasunobu (Kyoto JPX) Sakabe Yukio (Kyoto JPX), Metallized ceramic structure comprising aluminum nitride and tungsten layers.
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Harada Shigeki (Kawasaki JPX) Sugimoto Masahiro (Yokosuka JPX), Method of producing a metallization layer structure.
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Knickerbocker John U. (Hopewell Junction NY) Perry Charles H. (Poughkeepsie NY) Wall Donald R. (Wappingers Falls NY), Multilayer ceramic substrate with graded vias.
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Ogihara Satoru (Hitachi JPX) Ura Mitsuru (Hitachi JPX) Suzuki Yoshihiro (Hitachi JPX), Multilayer circuit board.
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Nagasaka Takashi (Anjyo JPX) Nakagawara Hideki (Anjyo JPX), Process for manufacturing ceramic multilayer substrate.
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Foster Brian C. (Sutton MA) Lind Roger S. (Acton MA), Substrates with dense metal vias.
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Iio Satoshi (Nagoya JPX) Okuno Akiyasu (Nagoya JPX), Surface structure of A1N substrate and a process for producing the same.
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Iio Satoshi (Nagoya JPX) Okuno Akiyasu (Nagoya JPX), Surface structure of AlN substrate and a process for producing the same.
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Dolhert Leonard E. (Clarksville) Enloe Jack H. (Columbia) Luh Ellice Y. (Bethesda) Lau John W. (Gaithersburg MD), Via metallization for AlN ceramic electronic package.
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이 특허를 인용한 특허 (7)

Fasano Benjamin V. ; Indyk Richard F. ; Kamath Sundar M. ; Knickerbocker John U. ; Langenthal Scott I. ; O'Connor Daniel P. ; Reddy Srinivasa S. N., Ceramic substrate having a sealed layer.
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Kuwabara Mitsuo,JPX, Functionally gradient integrated metal-ceramic member and semiconductor circuit substrate application thereof.
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Kuwabara Mitsuo,JPX, Functionally gradient material and method for producing the same.
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Kuwabara Mitsuo,JPX, Functionally gradient material and method for producing the same.
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Ritland Marcus A. ; Landin Steven M., Method for producing filled vias in electronic components.
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Bates Richard A. ; Cordero Carla N. ; Fasano Benjamin V. ; Goland David B.,PLX ; Hannon Robert ; Herron Lester W. ; Johnson Gregory M. ; Reitter Andrew ; Shinde Subhash L. ; Studzinski Lisa, Method for the controlling of certain second phases in aluminum nitride.
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Yamamoto, Yasuyuki; Maeda, Masakatsu, Process for producing metallized aluminum nitride substrate.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Aluminum nitride body having graded metallurgy 원문보기