초록 ▼

A semiconductor device includes a heat generating element disposed on a front surface of a semiconductor substrate and a cavity disposed within the semiconductor substrate opposite the heat generating element. In this structure, heat generated by the heat generating element is conducted through the

A semiconductor device includes a heat generating element disposed on a front surface of a semiconductor substrate and a cavity disposed within the semiconductor substrate opposite the heat generating element. In this structure, heat generated by the heat generating element is conducted through the substrate to the cavity, whereby the thermal conductivity of the device is improved. In a method for producing the semiconductor device, portions of the substrate at opposite sides of the heat generating element are selectively etched in a direction perpendicular to the front surface to form first holes (first etching process). Thereafter, the substrate is selectively etched from the front surface to form second holes beneath the respective first holes (second etching process). During the second etching process, the second holes are connected to each other, resulting in the cavity for heat radiation.

대표청구항 ▼

[ What is claimed is:] [1.] A method for producing a semiconductor device including:preparing a semiconductor substrate having opposite front and rear surfaces and a heat generating element disposed on the front surface;forming two recesses in the semiconductor substrate at opposite sides of the hea

[ What is claimed is:] [1.] A method for producing a semiconductor device including:preparing a semiconductor substrate having opposite front and rear surfaces and a heat generating element disposed on the front surface;forming two recesses in the semiconductor substrate at opposite sides of the heat generating element by selectively etching the semiconductor substrate from the front surface using a gas mixture in a direction perpendicular to the front surface of the substrate;forming two cavities in the semiconductor substrate beneath the respective recesses by selectively etching the semiconductor substrate from the front surface using a gas and connecting the cavities to each other directly opposite the heat generating element to form a single cavity; andfilling the single cavity with a first metal. [3.] A method for producing a semiconductor device comprising:preparing a semiconductor substrate having opposite front and rear surfaces and a heat generating element disposed on the front surface; andselectively wet etching the semiconductor substrate from the rear surface, using an etching mask having a first aperture opposite a region of the substrate where a via-hole is to be formed, and a plurality of second apertures opposite the heat generating element on the front surface of the substrate, each of the second apertures being smaller than the first aperture, thereby simultaneously forming a via-hole penetrating through the substrate and a recess in the substrate opposite the heat generating element, the recess having a depth extending from the rear surface of the substrate through only part of the substrate.