초록 ▼

A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film contai

A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.

대표청구항 ▼

[ What is claimed is:] [1.] A method of fabricating a semiconductor device comprising the steps of:forming a gate insulating film on a semiconductor film comprising silicon:forming a gate electrode on said gate insulating film;introducing an impurity into said semiconductor film using said gate elec

[ What is claimed is:] [1.] A method of fabricating a semiconductor device comprising the steps of:forming a gate insulating film on a semiconductor film comprising silicon:forming a gate electrode on said gate insulating film;introducing an impurity into said semiconductor film using said gate electrode as a mask to form a pair of impurity regions in said semiconductor film with a channel region defined therebetween;disposing a substance containing at least one of nickel, iron, cobalt, platinum and palladium on said pair of impurity regions; andheating said semiconductor film after introducing said impurity and disposing said substance, thereby crystallizing said channel region in such a manner that crystals grow through said channel region from a portion of said semiconductor film on which said substance have been disposed.