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[미국특허] Transistor and process for fabricating the same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/76
  • H01L-027/01
출원번호 US-0449669 (1995-05-24)
우선권정보 JP-0078998 (1993-03-12)
발명자 / 주소
  • Zhang Hongyong,JPX
  • Takayama Toru,JPX
  • Takemura Yasuhiko,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Sixbey, Friedman, Leedom & Ferguson P.C.Ferguson, Jr.
인용정보 피인용 횟수 : 75  인용 특허 : 6

초록 ▼

A thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallization of the silicon film, an

대표청구항 ▼

[ What is claimed is:] [1.] A thin film transistor comprising:a channel semiconductor region comprising intrinsic silicon formed on an insulating surface; andsource and drain semiconductor regions comprising one conductivity type silicon doped with one conductivity type impurity, wherein said channe

이 특허에 인용된 특허 (6) 인용/피인용 타임라인 분석

  1. Liu Gang (State College PA) Kakkad Ramesh H. (State College PA) Fonash Stephen J. (State College PA), Low temperature crystallization and pattering of amorphous silicon films.
    상세보기
  2. Fonash Stephen J. (State College PA) Liu Gang (Sunnyvale CA), Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates.
    상세보기
  3. Takafuji Yutaka (Nara JPX) Kishi Kohhei (Nara JPX) Yano Kohzo (Yamatokoriyama JPX), Method for making a thin film transistor.
    상세보기
  4. Wu Neng-Wei (Hsinchu TWX), Method of fabricating an offset dual gate thin film field effect transistor.
    상세보기
  5. Konishi Nobutake (Hitachiota JPX) Ono Kikuo (Hitachi JPX) Suzuki Takaya (Katsuta JPX) Miyata Kenji (Katsuta JPX), Thin film semiconductor device and method of fabricating the same.
    상세보기
  6. Tanaka Keiji (Saitama JPX) Nakazawa Kenji (Saitama JPX) Suyama Shiro (Saitama JPX) Kato Kinya (Saitama JPX), Thin film transistor.
    상세보기

이 특허를 인용한 특허 (75) 인용/피인용 타임라인 분석

  1. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Display switch with double layered gate insulation and resinous interlayer dielectric.
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  2. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
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  3. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
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  4. Ohtani, Hisashi; Koyama, Jun; Yamazaki, Shunpei, Electro-optical device and semiconductor device.
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  5. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
    상세보기
  6. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
    상세보기
  7. Hongyong Zhang JP; Hideto Ohnuma JP; Yasuhiko Takemura JP, METHODOLOGY FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICES BY CRYSTALLIZING AN AMORPHOUS FILM WITH CRYSTALLIZATION PROMOTING MATERIAL, PATTERNING THE CRYSTALLIZED FILM, AND THEN INCREASING THE CRYSTAL.
    상세보기
  8. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method for fabricating a semiconductor device.
    상세보기
  9. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
    상세보기
  10. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
    상세보기
  11. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
    상세보기
  12. Yamazaki,Shunpei; Yamaguchi,Naoaki; Nakajima,Setsuo, Method for manufacturing a semiconductor device.
    상세보기
  13. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.
    상세보기
  14. Zhang Hongyong,JPX ; Takayama Toru,JPX, Method for producing a semiconductor device including doping with a catalyst that is a group IV element.
    상세보기
  15. Yamazaki, Shunpei; Nakajima, Setsuo; Arai, Yasuyuki, Method for producing display device.
    상세보기
  16. Yamazaki, Shunpei; Nakajima, Setsuo; Arai, Yasuyuki, Method for producing display device.
    상세보기
  17. Yamazaki,Shunpei; Nakajima,Setsuo; Arai,Yasuyuki, Method for producing display-device.
    상세보기
  18. Zhang, Hongyong; Takemura, Yasuhiko; Takayama, Toru, Method for producing semiconductor device.
    상세보기
  19. Lee Kyung-Eon,KRX ; Choi Jae-Beom,KRX, Method of crystallizing a silicon film and a method of manufacturing a liquid crystal display apparatus.
    상세보기
  20. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Takemura Yasuhiko,JPX, Method of crystallizing thin films when manufacturing semiconductor devices.
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  21. Fukunaga,Takeshi; Ohtani,Hisashi; Miyanaga,Akiharu, Method of fabricating a semiconductor device utilizing a catalyst material solution.
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  22. Ohtani, Hisashi; Mitsuki, Toru, Method of fabricating semiconductor devices.
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  23. Ohtani Hisashi,JPX ; Mitsuki Toru,JPX, Method of fabricating semiconductor devices by crystallizing amorphous silicon with nickel.
    상세보기
  24. Ohtani, Hisashi, Method of forming crystalline silicon film.
    상세보기
  25. Ohnuma, Hideto; Yamazaki, Shunpei; Nakajima, Setsuo; Ohtani, Hisashi, Method of manufacturing a semiconductor device.
    상세보기
  26. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Method of manufacturing a semiconductor device.
    상세보기
  27. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
    상세보기
  28. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method of manufacturing a semiconductor device including reduction of a catalyst.
    상세보기
  29. Maekawa,Shinji, Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film.
    상세보기
  30. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Method of manufacturing a semiconductor device that includes heating the gate insulating film.
    상세보기
  31. Ohtani Hisashi,JPX, Method of manufacturing a thin film transistor involving laser treatment.
    상세보기
  32. Yamaguchi Takehisa,JPX ; Nakayama Akio,JPX, Semiconductor TFT, producing method thereof, semiconductor TFT array substrate and liquid crystal display using the same.
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  33. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
    상세보기
  34. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.
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  35. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
    상세보기
  36. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
    상세보기
  37. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
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  38. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
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  39. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
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  40. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
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  41. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
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  42. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.
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  43. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  44. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  45. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
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  46. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  47. Konuma,Toshimitsu; Sugawara,Akira; Uehara,Yukiko; Zhang,Hongyong; Suzuki,Atsunori; Ohnuma,Hideto; Yamaguchi,Naoaki; Suzawa,Hideomi; Uochi,Hideki; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
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  48. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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