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A semiconductor device having a active layer comprising crystalline silicon, said active layer comprising a first layer comprising crystalline silicon formed on an insulating surface and a second layer comprising crystalline silicon formed on said first layer, wherein said first layer contains a met

A semiconductor device having a active layer comprising crystalline silicon, said active layer comprising a first layer comprising crystalline silicon formed on an insulating surface and a second layer comprising crystalline silicon formed on said first layer, wherein said first layer contains a metal element at a first concentration while said second layer is free from said metal element or contains said metal element at a second concentration which is lower than said first concentration.

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[ What is claimed is:] [1.] A semiconductor device comprising:source and drain regions formed on an insulating surface, said source and drain regions having first crystalline semiconductor layer being formed on said insulating surface and second crystalline semiconductor layer being formed on said f

[ What is claimed is:] [1.] A semiconductor device comprising:source and drain regions formed on an insulating surface, said source and drain regions having first crystalline semiconductor layer being formed on said insulating surface and second crystalline semiconductor layer being formed on said first semiconductor layer;a channel region formed between said source and drain regions, said channel region having said first semiconductor layer being formed on said insulating surface and said second semiconductor layer being formed on said first semiconductor layer,wherein said first semiconductor layer comprises a catalyst element for crystallizing said semiconductor at first concentration while said second semiconductor layer is free from said catalyst element or comprises said catalyst element at a second concentration lower than said first concentration.