초록 ▼

A structure and method for removing and recovering an anodically bonded glass device from a substrate using a metal interlayer interposed between the glass and the substrate is provided. As used in semiconductor mask fabrication, the structure comprises a silicon wafer substrate coated with a membra

A structure and method for removing and recovering an anodically bonded glass device from a substrate using a metal interlayer interposed between the glass and the substrate is provided. As used in semiconductor mask fabrication, the structure comprises a silicon wafer substrate coated with a membrane on which a metal interlayer is disposed. The metal interlayer and a glass device are anodically bonded together. Recovery of the glass device is accomplished by chemically and mechanically removing the wafer and its membrane from the metal interlayer. The membrane is preferably removed using reactive ion etching to which the metal interlayer is resistant. The metal interlayer is then removed from the glass deviceusing a highly corrosive chemical solution. The recovered glass device may then be reused.

대표청구항 ▼

[ We claim:] [1.] A structure which allows the recovery of an anodically bonded glass device therefrom, said structure comprising:a substrate having a surface;an oxidizable metal interlayer on said surface, said metal interlayer suitable for anodic bonding to said glass device; anda glass device ano

[ We claim:] [1.] A structure which allows the recovery of an anodically bonded glass device therefrom, said structure comprising:a substrate having a surface;an oxidizable metal interlayer on said surface, said metal interlayer suitable for anodic bonding to said glass device; anda glass device anodically bonded to said metal interlayer.