[특허]Advanced copper interconnect system that is compatible with existing IC wire bonding technology

Advanced copper interconnect system that is compatible with existing IC wire bonding technology 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/60
출원번호	US-0564695 (1995-11-29)
발명자 / 주소	Cheung Robin W. Lin Ming-Ren
출원인 / 주소	Advanced Micro Devices, Inc.
대리인 / 주소	Saywer & Associates
인용정보	피인용 횟수 : 43 인용 특허 : 0

초록 ▼

A process is provided which enables electrical connection to be formed between gold and aluminum wires and copper interconnects. Conventional techniques for wire bonding are ineffective for bonding gold wires or aluminum wires to copper pads or copper interconnects. A process is provided to modify the copper pads so that conventional wire bonding techniques can be employed. In the process of the present invention an aluminum pad is formed over the copper interconnects. The metal wire is then bonded to the aluminum pad using conventional wire bonding techniques. No new hardware and/or technology is required for the metal wire bonding. No new technology is required to integrate the process of the invention into existing IC fabrication processes.

대표청구항 ▼

[ what is claimed is:] [1.] A process for forming electrical connection between metal wires and metal interconnects which cannot otherwise be bonded to form electrical contact therebetween, said metal wires and said metal interconnects supported over an integrated circuit structure, said metal interconnects supported in an interlayer dielectric, said process comprising:(a) forming at least one of said metal interconnects within said interlayer dielectric;(b) depositing a layer of aluminum on said metal interconnects and said interlayer dielectric;(c) patterning and etching said layer of aluminum to form an aluminum pad;(d) depositing an insulating layer over said aluminum pad, said metal interconnects, and said interlayer dielectric;(e) patterning and etching said insulating layer to form a bonding pad opening in said insulating layer above said aluminum pad; and(f) bonding one of said metal wires to said aluminum pad.

이 특허를 인용한 특허 (43)

Mei Sheng Zhou SG; Sangki Hong SG; Simon Chooi SG, Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects.
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Wang, Chung Yu; Lee, Chien-Hsiun, Aluminum cap for reducing scratch and wire-bond bridging of bond pads.
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Tseng, Horng-Huei; Hu, Chenming, Aluminum-based interconnection in bond pad layer.
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Yu, Chen-Hua; Tseng, Horng-Huei, Bonding structure and fabrication thereof.
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Lee, Jin-Yuan; Lo, Hsin-Jung, Chip assembly with interconnection by metal bump.
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Saran, Mukul; Martin, Charles A.; Cox, Ronald H., Fine pitch system and method for reinforcing bond pads in semiconductor devices.
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Ryan,Vivian, Integrated circuit having bond pad with improved thermal and mechanical properties.
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Rhodes,Howard E., Local multilayered metallization.
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Rhodes,Howard E., Local multilayered metallization.
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Iacoponi, John A., Method and apparatus for forming an under bump metallurgy layer.
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Stierman, Roger J.; Moore, Thomas M.; Shinn, Gregory B., Method for reworking metal layers on integrated circuit bond pads.
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Stierman, Roger J.; Moore, Thomas M.; Shinn, Gregory B., Method for reworking metal layers on integrated circuit bond pads.
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Kwok Keung Paul Ho SG; Simon Chooi SG; Yi Xu SG; Yakub Aliyu SG; Mei Sheng Zhou SG; John Leonard Sudijono SG; Subhash Gupta SG; Sudipto Ranendra Roy SG, Method of application of conductive cap-layer in flip-chip, COB, and micro metal bonding.
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Ho, Kwok Keung Paul; Chooi, Simon; Xu, Yi; Aliyu, Yakub; Zhou, Mei Sheng; Sudijono, John Leonard; Gupta, Subhash; Roy, Sudipto Ranendra, Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding.
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Kwok Keung Paul Ho SG; Yi Xu SG; Simon Chooi SG; Yakub Aliyu SG; Mei Sheng Zhou SG; John Leonard Sudijono SG; Subhash Gupta SG; Sudipto Ranendra Roy SG, Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bonding.
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Huang Yimin,TWX ; Yew Tri-Rung,TWX, Method of forming bonding pad.
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Chen Sheng-Hsiung,TWX, Method of improving copper pad adhesion.
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Chen,Sheng Hsiung, Method of improving copper pad adhesion.
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Sheng-Hsiung Chen TW; Fan Keng Yang TW, Method of improving pad metal adhesion.
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Yabu Toshiki,JPX ; Segawa Mizuki,JPX, Method of making a semiconductor device.
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Jang Syun-Ming,TWX ; Liang Mong-Song,TWX, Method to improve the adhesion of a molding compound to a semiconductor chip comprised with copper damascene structures.
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Chungpaiboonpatana Surasit ; Davidson Craig, Microelectronic interconnect structures and methods for forming the same.
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Edelstein Daniel Charles ; McGahay Vincent ; Nye ; III Henry A. ; Ottey Brian George Reid ; Price William H., Robust interconnect structure.
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Tsu Shih TW; Chen-Hua Yu TW, Self stop aluminum pad for copper process.
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Lin, Mou-Shiung; Lee, Jin-Yuan, Semiconductor chip structure.
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Timothy W. Ellis ; Nikhil Murdeshwar ; Mark A. Eshelman, Semiconductor copper band pad surface protection.
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Ellis, Timothy W.; Murdeshwar, Nikhil; Eshelman, Mark A., Semiconductor copper bond pad surface protection.
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Ellis, Timothy W.; Murdeshwar, Nikhil; Eshelman, Mark A.; Rheault, Christian, Semiconductor copper bond pad surface protection.
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Ellis,Timothy W.; Murdeshwar,Nikhil; Eshelman,Mark A.; Rheault,Christian, Semiconductor copper bond pad surface protection.
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Timothy W. Ellis ; Nikhil Murdeshwar ; Mark A. Eshelman ; Christian Rheault, Semiconductor copper bond pad surface protection.
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Toyoda, Hiroshi; Nakao, Mitsuhiro; Hasunuma, Masahiko; Kaneko, Hisashi; Sakata, Atsuko; Komukai, Toshiaki, Semiconductor device including an insulating film and insulating pillars and manufacturing method of the semiconductor device.
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Toyoda, Hiroshi; Nakao, Mitsuhiro; Hasunuma, Masahiko; Kaneko, Hisashi; Sakata, Atsuko; Komukai, Toshiaki, Semiconductor device with improved bonding.
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Yabu Toshiki,JPX ; Segawa Mizuki,JPX, Semiconductor interconnect formed over an insulation and having moisture resistant material.
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Yabu, Toshiki; Segawa, Mizuki, Semiconductor interconnect formed over an insulation and having moisture resistant material.
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Yabu,Toshiki; Segawa,Mizuki, Semiconductor interconnect formed over an insulation and having moisture resistant material.
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Wolf, Kuno; Wallrauch, Alexander; Meinders, Horst; Will, Barbara; Urbach, Peter, Soldering method for mounting electric components.
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Jang Syun-Ming,TWX, Top metal and passivation procedures for copper damascene structures.
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Daubenspeck, Timothy H.; Gambino, Jeffrey P.; Muzzy, Christopher D.; Sauter, Wolfgang, Wire bond pads.
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Daubenspeck,Timothy H.; Gambino,Jeffrey P.; Muzzy,Christopher D.; Sauter,Wolfgang, Wire bond pads.
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Besser Paul R. ; Cheung Robin W., Wire bonding CU interconnects.
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Chittipeddi, Sailesh; Merchant, Sailesh Mansinh, Wire bonding method for copper interconnects in semiconductor devices.
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Lin, Mou-Shiung; Chen, Michael; Chou, Chien-Kang; Chou, Mark, Wirebond pad for semiconductor chip or wafer.
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Yamamoto,Hiroshi, Wiring structure of a semiconductor integrated circuit and a method of forming the wiring structure.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
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연합인증

Advanced copper interconnect system that is compatible with existing IC wire bonding technology 원문보기

초록 ▼

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Advanced copper interconnect system that is compatible with existing IC wire bonding technology 원문보기

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연구과제 타임라인

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이 특허를 인용한 특허 (43)

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