$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Method of processing semiconductor device with laser 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
출원번호 US-4623614 (1995-06-05)
우선권정보 JP-0309826 (1994-11-18)
발명자 / 주소
  • Kousai Takamasa,JPX
  • Zhang Hongyong,JPX
  • Miyanaga Akiharu,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Sixbey, Friedman, Leedom & FergusonFerguson, Jr.
인용정보 피인용 횟수 : 140  인용 특허 : 5

초록

A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser cryst

대표청구항

[ We claim:] [1.] A method of processing a semiconductor device with a laser comprising:

이 특허에 인용된 특허 (5)

  1. Zhang Hongyong (Kanagawa JPX) Kusumoto Naoto (Kanagawa JPX), Method of annealing a semiconductor.
  2. Imahashi Issei (Yamanashi JPX) Hama Kiichi (Chino JPX) Hata Jiro (Yamanashi JPX), Method of forming polycrystalling silicon film in process of manufacturing LCD.
  3. Benton Janet L. (Warren NJ) Doherty Charles J. (Westfield NJ) Kimerling Lionel C. (Westfield NJ) Leamy Harry J. (Summit NJ), Passivation of defects in laser annealed semiconductors.
  4. Sano Masafumi (Nagahama JPX), Process for forming deposited film.
  5. Zhang Hongyong (Kanagawa JPX) Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX), Process for laser processing and apparatus for use in the same.

이 특허를 인용한 특허 (140)

  1. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same.
  2. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  3. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  4. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  5. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  6. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  7. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  8. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  9. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  10. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  11. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  12. Kawashima, Takahiro; Kawachi, Genshiro; Oda, Tomohiko; Nishitani, Hikaru, Crystallinity evaluation method, crystallinity evaluation device, and computer software thereof.
  13. Tanaka, Koichiro, Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus.
  14. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Display switch with double layered gate insulation and resinous interlayer dielectric.
  15. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
  16. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
  17. Ohtani, Hisashi; Koyama, Jun; Yamazaki, Shunpei, Electro-optical device and semiconductor device.
  18. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  19. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  20. Kusumoto, Naoto; Tanaka, Koichiro, Laser annealing method.
  21. Kusumoto, Naoto; Tanaka, Koichiro, Laser annealing method.
  22. Kusumoto, Naoto; Tanaka, Koichiro, Laser annealing method.
  23. Kusumoto,Naoto; Tanaka,Koichiro, Laser annealing method.
  24. Kusumoto, Naoto; Takayama, Toru; Yonezawa, Masato, Laser annealing method and laser annealing device.
  25. Kusumoto,Naoto; Takayama,Toru; Yonezawa,Masato, Laser annealing method and laser annealing device.
  26. Yamazaki, Shunpei; Tanaka, Koichiro; Miyairi, Hidekazu; Shiga, Aiko; Shimomura, Akihisa; Akiba, Mai, Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment.
  27. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu; Atsumi, Kazuhiro; Muramatsu, Kenichi, Laser beam machining method.
  28. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu; Atsumi, Kazuhiro; Muramatsu, Kenichi, Laser beam machining method.
  29. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu; Atsumi, Kazuhiro; Muramatsu, Kenichi, Laser cutting by forming a modified region within an object and generating fractures.
  30. Yamazaki, Shunpei; Tanaka, Koichiro, Laser illumination system.
  31. Miyairi, Hidekazu, Laser irradiation apparatus.
  32. Tanaka,Koichiro, Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device.
  33. Fukumitsu, Kenshi; Fukuyo, Fumitsugu; Uchiyama, Naoki, Laser processing method.
  34. Fukuyo, Fumitsugu; Fukumitsu, Kenshi, Laser processing method.
  35. Fukuyo, Fumitsugu; Fukumitsu, Kenshi, Laser processing method.
  36. Fukuyo, Fumitsugu; Fukumitsu, Kenshi, Laser processing method.
  37. Zhang Hongyong,JPX ; Tanaka Koichiro,JPX, Laser processing method.
  38. Zhang, Hongyong; Tanaka, Koichiro, Laser processing method.
  39. Zhang,Hongyong; Tanaka,Koichiro, Laser processing method.
  40. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Laser processing method and laser processing apparatus.
  41. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Laser processing method and laser processing apparatus.
  42. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Laser processing method and laser processing apparatus.
  43. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Laser processing method and laser processing apparatus.
  44. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Laser processing method and laser processing apparatus.
  45. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Laser processing method and laser processing apparatus.
  46. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Laser processing method and laser processing apparatus.
  47. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Laser processing method and laser processing apparatus.
  48. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu; Atsumi, Kazuhiro; Muramatsu, Kenichi, Laser processing method and laser processing apparatus.
  49. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Sugiura, Ryuji, Method for cutting semiconductor substrate.
  50. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Method for dicing substrate.
  51. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method for fabricating a semiconductor device.
  52. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  53. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  54. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
  55. Nakajima, Setsuo, Method for manufacturing a semiconductor device.
  56. Nakajima, Setsuo, Method for manufacturing a semiconductor device.
  57. Yamazaki,Shunpei; Yamaguchi,Naoaki; Nakajima,Setsuo, Method for manufacturing a semiconductor device.
  58. Shimomura,Akihisa; Ohnuma,Hideto; Shoji,Hironobu, Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device.
  59. Shimomura,Akihisa; Koyama,Masaki; Shoji,Hironobu, Method for manufacturing semiconductor device, and laser irradiation apparatus.
  60. Naoto Kusumoto JP; Toru Takayama JP; Masato Yonezawa JP, Method for manufacturing semiconductor devices.
  61. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.
  62. Yamazaki, Shunpei; Tanaka, Koichiro, Method of changing an energy attenuation factor of a linear light in order to crystallize a semiconductor film.
  63. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Method of cutting a substrate and method of manufacturing a semiconductor device.
  64. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Method of cutting a substrate, method of cutting a wafer-like object, and method of manufacturing a semiconductor device.
  65. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Method of cutting a substrate, method of processing a wafer-like object, and method of manufacturing a semiconductor device.
  66. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Method of cutting a wafer-like object and semiconductor chip.
  67. Fukuyo, Fumitsugu; Fukumitsu, Kenshi, Method of cutting an object to be processed.
  68. Fukuyo, Fumitsugu; Fukumitsu, Kenshi, Method of cutting an object to be processed.
  69. Fukuyo, Fumitsugu; Fukumitsu, Kenshi, Method of cutting object to be processed.
  70. Fukuyo, Fumitsugu; Fukumitsu, Kenshi, Method of cutting processed object.
  71. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Sugiura, Ryuji, Method of cutting semiconductor substrate.
  72. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Sugiura, Ryuji, Method of cutting semiconductor substrate.
  73. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Sugiura, Ryuji, Method of cutting semiconductor substrate via modified region formation and subsequent sheet expansion.
  74. Fukunaga,Takeshi; Ohtani,Hisashi; Miyanaga,Akiharu, Method of fabricating a semiconductor device utilizing a catalyst material solution.
  75. Ohtani, Hisashi; Mitsuki, Toru, Method of fabricating semiconductor devices.
  76. Ohtani, Hisashi, Method of forming crystalline silicon film.
  77. Tanaka, Koichiro; Moriwaka, Tomoaki, Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device.
  78. Tanaka, Koichiro; Moriwaka, Tomoaki, Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device.
  79. Tanaka, Koichiro; Moriwaka, Tomoaki, Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device.
  80. Tanaka, Koichiro; Moriwaka, Tomoaki, Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device.
  81. Ohnuma, Hideto; Yamazaki, Shunpei; Nakajima, Setsuo; Ohtani, Hisashi, Method of manufacturing a semiconductor device.
  82. Tanaka, Koichiro, Method of manufacturing a semiconductor device.
  83. Tanaka, Koichiro; Nakajima, Setsuo, Method of manufacturing a semiconductor device.
  84. Tanaka, Koichiro; Nakajima, Setsuo, Method of manufacturing a semiconductor device.
  85. Tanaka,Koichiro, Method of manufacturing a semiconductor device.
  86. Tanaka,Koichiro, Method of manufacturing a semiconductor device.
  87. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Method of manufacturing a semiconductor device.
  88. Yamazaki, Shunpei; Nakajima, Setsuo; Miyairi, Hidekazu, Method of manufacturing a semiconductor device.
  89. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
  90. Nakajima,Setsuo; Shiga,Aiko; Makita,Naoki; Matsuo,Takuya, Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus.
  91. Nakajima,Setsuo; Shiga,Aiko; Makita,Naoki; Matsuo,Takuya, Method of manufacturing a semiconductor device by irradiating with a laser beam.
  92. Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki; Wakuda, Toshimitsu, Method of manufacturing a semiconductor device formed using a substrate cutting method.
  93. Mitsuki, Toru; Shichi, Takeshi; Maekawa, Shinji; Shibata, Hiroshi; Miyanaga, Akiharu, Method of manufacturing a semiconductor device having a crystallized semiconductor film.
  94. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method of manufacturing a semiconductor device including reduction of a catalyst.
  95. Ohtani Hisashi,JPX, Method of manufacturing a thin film transistor involving laser treatment.
  96. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
  97. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Semiconductor chip manufacturing method.
  98. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.
  99. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
  100. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
  101. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
  102. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  103. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  104. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
  105. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
  106. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.
  107. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  108. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  109. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
  110. Shoji,Hironobu; Shimomura,Akihisa; Koyama,Masaki, Semiconductor device and method for manufacturing semiconductor device.
  111. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
  112. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
  113. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
  114. Kasahara, Kenji; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  115. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  116. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  117. Ohtani,Hisashi; Takano,Tamae; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.
  118. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
  119. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
  120. Yamazaki, Shunpei; Adachi, Hiroki; Kuwabara, Hideaki, Semiconductor device having semiconductor circuit comprising semiconductor element, and method for manufacturing same.
  121. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  122. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  123. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.
  124. Kawashima, Takahiro; Nishitani, Hikaru; Ootaka, Sei, Semiconductor thin-film forming method, semiconductor device, semiconductor device manufacturing method, substrate, and thin-film substrate.
  125. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  126. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  127. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  128. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  129. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  130. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  131. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  132. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  133. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  134. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  135. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  136. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  137. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  138. Fujii, Yoshimaro; Fukuyo, Fumitsugu; Fukumitsu, Kenshi; Uchiyama, Naoki, Substrate dividing method.
  139. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
  140. Kawashima, Takahiro; Oda, Tomohiko; Nishitani, Hikaru, Thin-film transistor device.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로