$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Integrated pad and fuse structure for planar copper metallurgy 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/40
  • H01L-023/48
  • H01L-023/52
출원번호 US-9256555 (1997-09-09)
발명자 / 주소
  • Motsiff William Thomas
  • Geffken Robert Michael
  • Uttecht Ronald Robert
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Whitham, Curtis & WhithamWalter
인용정보 피인용 횟수 : 37  인용 특허 : 7

초록

A semiconductor interconnection consists of a corrosion resistant integrated fuse and Controlled, Collapse Chip Connection (C4) structure for the planar copper Back End of Line (BEOL). Non copper fuse material is directly connected to copper wiring.

대표청구항

[ Having thus described our invention, what we claim as new and desire to secure by Letters Patent is as follows:] [1.] A method of making an interconnection structure for a semiconductor circuit comprising the steps of:

이 특허에 인용된 특허 (7)

  1. Cohen Stephen A. (Wappingers Falls NY) Edelstein Daniel C. (New Rochelle NY) Grill Alfred (White Plains NY) Paraszczak Jurij R. (Pleasantville NY) Patel Vishnubhai V. (Yorktown NY), Diamond-like carbon for use in VLSI and ULSI interconnect systems.
  2. Srikrishnan Kris V. (Wappingers Falls NY) White James F. (Newburgh NY) Yang Jer-Ming (Changhua TWX), Electrically blowable fuse structure for organic insulators.
  3. Gurevich Leon (St. Louis MO), Metallo-organic film fractional ampere fuses and method of making.
  4. Broadbent Eliot K. (San Jose CA), Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material.
  5. Mo Roy (Flushing NY), Method of making self-aligned tungsten interconnection in an integrated circuit.
  6. Kapoor Ashok K. (Palo Alto CA), Product of process for formation of vias (or contact openings) and fuses in the same insulation layer with minimal addit.
  7. Lee Chong E. (Milpitas CA), Self-aligned via and contact interconnect manufacturing method.

이 특허를 인용한 특허 (37)

  1. Daubenspeck, Timothy H.; Klaasen, William A.; Motsiff, William T.; Previti-Kelly, Rosemary A.; Rankin, Jed H., Antifuse for use with low κ dielectric foam insulators.
  2. Timothy H. Daubenspeck ; William A. Klaasen ; William T. Motsiff ; Rosemary A. Previti-Kelly ; Jed H. Rankin, Antifuse for use with low k dielectric foam insulators.
  3. Timothy Daubenspeck ; Kurt R. Kimmel ; William A. Klaasen ; William T. Motsiff ; Rosemary A. Previti-Kelly ; W David Pricer ; Jed H. Rankin, Corrosion insensitive fusible link using capacitance sensing for semiconductor devices.
  4. Geffken, Robert M.; Hautala, John J., Dual damascene integration structure and method for forming improved dual damascene integration structure.
  5. Thei, Kong-Beng; Cheng, Chung Long; Liu, Chung-Shi; Chuang, Harry-Hak-Lay; Wu, Shien-Yang; Chen, Shi-Bai, E-fuse structure design in electrical programmable redundancy for embedded memory circuit.
  6. Thei, Kong-Beng; Cheng, Chung Long; Liu, Chung-Shi; Chuang, Harry-Hak-Lay; Wu, Shien-Yang; Chen, Shi-Bai, E-fuse structure design in electrical programmable redundancy for embedded memory circuit.
  7. Barth, Hans-Joachim; Felsner, Petra; Kaltalioglu, Erdem; Friese, Gerald, FBEOL process for Cu metallizations free from Al-wirebond pads.
  8. Thei, Kong-Beng; Cheng, Chung Long; Liu, Chung-Shi; Chuang, Harry; Wu, Shien-Yang; Chen, Shi-Bai, Fuse structure.
  9. Timothy H. Daubenspeck ; William T. Motsiff, High laser absorption copper fuse and method for making the same.
  10. Pricer, Wilbur D.; Previti-Kelly, Rosemary A.; Motsiff, William T., Inductive fuse for semiconductor device.
  11. Wilbur D. Pricer ; Rosemary A. Previti-Kelly ; William T. Motsiff, Inductive fuse for semiconductor device.
  12. Cheng, Chuan-Cheng; Liu, Yauh-Ching, Integrated capacitor and fuse.
  13. Tsai Chao-Chieh,TWX, Metal fuse in copper dual damascene.
  14. Tsai, Chao-Chieh, Metal fuse in copper dual damascene.
  15. Adler Eric ; Trombley Henry W., Metal-insulator-metal capacitor for copper damascene process and method of forming the same.
  16. Voldman, Steven H.; Stamper, Anthony K., Method and structure for forming precision MIM fusible circuit elements using fuses and antifuses.
  17. Reber, Douglas M.; Shroff, Mehul D.; Travis, Edward O., Method for forming an integrated circuit having a programmable fuse.
  18. Allen Lynn R., Method for preventing oxidation in the formation of a via in an integrated circuit.
  19. Chuan-Cheng Cheng ; Yauh-Ching Liu, Method for simultaneous formation of integrated capacitor and fuse.
  20. Adler,Eric, Method of fabricating a capacitor having sidewall spacer protecting the dielectric layer.
  21. Son, Hong-Seong; Hah, Sang-Rok; Koo, Ja-Eung, Method of fabricating a metal-insulator-metal capacitor.
  22. Stuart E. Greer, Method of forming copper interconnection utilizing aluminum capping film.
  23. Lee Dong-Hun,KRX ; Ahn Jong-Hyon,KRX, Method of making a fuse in a semiconductor device and a semiconductor device having a fuse.
  24. Tze-Liang Lee TW; Mong-Song Liang TW, Method of protecting a copper pad structure during a fuse opening procedure.
  25. Edelstein,Daniel C.; Kang,Sung Kwon; McGlashan Powell,Maurice; O'Sullivan,Eugene J.; Walker,George F., Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped.
  26. Wojtczuk, Steven J.; Moe, James G.; Little, Roger G., Nanophotovoltaic devices.
  27. Kurt R. Kimmel ; J. Alex Chediak ; William T. Motsiff ; Wilbur D. Pricer ; Richard Q. Williams, Re-settable tristate programmable device.
  28. Kurt R. Kimmel ; J. Alex Chediak ; William T. Motsiff ; Wilbur D. Pricer ; Richard Q. Williams, Re-settable tristate programmable device.
  29. Edelstein Daniel Charles ; McGahay Vincent ; Nye ; III Henry A. ; Ottey Brian George Reid ; Price William H., Robust interconnect structure.
  30. Lin, Kang-Cheng; Hsia, Chin-Chiu, Scheme to define laser fuse in dual damascene CU process.
  31. Kurosawa, Yasunori, Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument.
  32. Kobayashi, Thomas S.; Sheck, Stephen G.; Pozder, Scott K., Semiconductor device having a fuse and method of forming thereof.
  33. Park, Seung Han; Lee, Ki Young, Semiconductor device having fuse and capacitor at the same level and method of fabricating the same.
  34. Park,Seung Han; Lee,Ki Young, Semiconductor device having fuse and capacitor at the same level and method of fabricating the same.
  35. Reber, Douglas M.; Shroff, Mehul D.; Travis, Edward O., Thin beam deposited fuse.
  36. Daubenspeck, Timothy H.; Gambino, Jeffrey P.; Motsiff, William T., Thinning of fuse passivation after C4 formation.
  37. McDevitt, Thomas L.; Stamper, Anthony K., Tri-layer dielectric fuse cap for laser deletion.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로