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Semiconductor component with multi-level interconnect system and method of manufacture 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/48
  • H01L-023/52
  • H01L-029/40
출원번호 US-0703223 (1996-08-26)
발명자 / 주소
  • Abercrombie David A.
  • Brownson Rickey S.
  • Cherniawski Michael R.
출원인 / 주소
  • Motorola, Inc.
인용정보 피인용 횟수 : 32  인용 특허 : 0

초록

A method of manufacturing a semiconductor component with a multi-level interconnect system includes providing a substrate (11), fabricating a device (12) in the substrate (11), forming an interconnect layer (15) over the substrate (11), depositing a dielectric layer (20) over the interconnect layer

대표청구항

[ What is claimed is:] [1.] A semiconductor component with a multi-level interconnect system comprising:a substrate;a semiconductor device supported by the substrate;a first electrically conductive layer overlying the substrate and electrically coupled to the semiconductor device;a first electricall

이 특허를 인용한 특허 (32)

  1. Lee, Jin-Yuan; Lin, Mou-Shiung; Huang, Ching-Cheng, Chip structure and process for forming the same.
  2. Lee, Jin-Yuan; Lin, Mou-Shiung; Huang, Ching-Cheng, Chip structure and process for forming the same.
  3. Lee,Jin Yuan; Lin,Mou Shiung; Huang,Ching Cheng, Chip structure and process for forming the same.
  4. Lin,Mou Shiung; Lee,Jin Yuan; Huang,Ching Cheng, Chip structure and process for forming the same.
  5. Lin,Mou Shiung; Lee,Jin Yuan; Huang,Ching Cheng, Chip structure and process for forming the same.
  6. Pasch Nicholas F. ; Rakkhit Rajat, Integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level, and process for making same.
  7. Huang,Tai Chun; Yao,Chih Hsiang; Lin,Yih Hsiung; Bao,Tien I; Chen,Bi Trong; Lu,Yung Cheng, Integration film scheme for copper / low-k interconnect.
  8. Hill, Rodney L., Metal interconnect structure with a side wall spacer that protects an ARC layer and a bond pad from corrosion and method of forming the metal interconnect structure.
  9. Choi Kyeong Keun,KRX ; Sim Gyu Cheol,KRX, Metal interconnection structure of semiconductor device.
  10. Kraft, Jochen; Schatzmayr, Martin; Enichlmair, Hubert, Method for producing structure in chips.
  11. Schifko James R. ; Oldham Danny R., Method for removal of etch residue immediately after etching a SOG layer.
  12. Huang-Chung Cheng TW; Wei Kai Hong TW; Fu Gow Tarntair TW, Method of fabricating a field emission device on the sidewalls of holes formed in an insulator layer.
  13. Trivedi, Jigish D., Method of fabricating a stacked local interconnect structure.
  14. Trivedi,Jigish D., Method of fabricating stacked local interconnect structure.
  15. Huang, Jui Tsen, Method of relieving wafer stress.
  16. Hirasawa Koki,JPX ; Ono Teruo,JPX, Multilayered wiring structure and method of manufacturing the same.
  17. Nicholas F. Pasch ; Rajat Rakkhit, Process for making integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level.
  18. Jigish D. Trivedi, Stacked local interconnect structure and method of fabricating same.
  19. Jigish D. Trivedi, Stacked local interconnect structure and method of fabricating same.
  20. Trivedi, Jigish D., Stacked local interconnect structure and method of fabricating same.
  21. Trivedi, Jigish D., Stacked local interconnect structure and method of fabricating same.
  22. Trivedi, Jigish D., Stacked local interconnect structure and method of fabricating same.
  23. Bold, Thomas, System and apparatus that reduce corrosion of an integrated circuit through its bond pads.
  24. Hill, Rodney, System and method for preventing metal corrosion on bond pads.
  25. Bold, Thomas, System and method for reducing corrosion of an integrated circuit through its bond pads.
  26. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  27. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  28. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  29. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  30. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  31. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
  32. Lin, Mou-Shiung, Top layers of metal for high performance IC's.
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