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Low dielectric constant silicon dioxide sandwich layer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/316
출원번호 US-0691990 (1996-08-02)
발명자 / 주소
  • Ravi Tirunelveli S.
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Townsend & Townsend & Crew LLP
인용정보 피인용 횟수 : 99  인용 특허 : 0

초록 ▼

An improved sandwich layer of silicon dioxide layers for gap filling between metal lines. This is accomplished using a first layer formed in a PECVD process using TEOS and a fluorine-containing compound to give a barrier layer with a dielectric constant of less than 4.0, preferably approximately 3.5

대표청구항 ▼

[ What is claimed is:] [1.] A method for forming a composite dielectric layer with a selected composite dielectric constant on a semiconductor substrate having conductive lines defining a narrow gap, the method comprising the steps of:forming a first layer on the substrate and over the conductive li

이 특허를 인용한 특허 (99)

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