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Semiconductor device with recrystallized active area 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/04
  • H01L-029/12
  • H01L-027/108
  • H01I-031/036
출원번호 US-0255701 (1994-06-07)
우선권정보 JP-0166115 (1993-06-12)
발명자 / 주소
  • Mitanaga Akiharu,JPX
  • Ohtani Hisashi,JPX
  • Teramoto Satoshi,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Sixbey, Friedman, Leedom & Ferguson, P.C.Ferguson, Jr.
인용정보 피인용 횟수 : 103  인용 특허 : 0

초록

One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film, and then crystallized by heating at 600.degree. C. or less. The crystallization develops from a region where the element has been introduced in a direction parallel to a sub

대표청구항

[ What is claimed is:] [1.] A semiconductor device having a semiconductor layer comprising silicon as an active region thereof, wherein said semiconductor layer has a crystalline structure and is doped with a crystallization promoting material at least partly, said material selected from the group c

이 특허를 인용한 특허 (103)

  1. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same.
  2. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  3. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  4. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  5. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  6. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  7. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  8. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  9. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  10. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  11. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  12. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Display switch with double layered gate insulation and resinous interlayer dielectric.
  13. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
  14. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
  15. Ohtani, Hisashi; Koyama, Jun; Yamazaki, Shunpei, Electro-optical device and semiconductor device.
  16. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  17. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  18. Koo, Jae-Bon; Park, Ji-Yong; Lee, Ul-Ho; Kim, Jin-Soo; Jung, Jin-Woung; Lee, Chang-Gyu, Flat panel display with thin film transistor.
  19. Koo,Jae Bon; Park,Ji Yong; Lee,Ul Ho; Kim,Jin Soo; Jung,Jin Woung; Lee,Chang Gyu, Flat panel display with thin film transistor.
  20. Koo,Jae Bon; Park,Ji Yong; Park,Sang Il, Flat panel display with thin film transistor (TFT).
  21. Yamazaki,Shunpei; Tanaka,Koichiro, Laser irradiating apparatus and method of manufacturing semiconductor apparatus.
  22. Miyairi, Hidekazu, Laser irradiation apparatus.
  23. Karasawa, Takeshi; Ikeuchi, Mituru, Method for controlling electrical conductivity.
  24. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method for fabricating a semiconductor device.
  25. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  26. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  27. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
  28. Muramatsu, Shinichi; Minakawa, Yasushi; Oka, Fumihito; Sasaki, Tadashi, Method for forming crystalline silicon layer and crystalline silicon semiconductor device.
  29. Nakajima, Setsuo, Method for manufacturing a semiconductor device.
  30. Nakajima, Setsuo, Method for manufacturing a semiconductor device.
  31. Yamazaki,Shunpei; Yamaguchi,Naoaki; Nakajima,Setsuo, Method for manufacturing a semiconductor device.
  32. Yasuhiko Takemura JP, Method for manufacturing a semiconductor device.
  33. Takahashi, Mitsuasa, Method for manufacturing thin film transistor.
  34. Takahashi,Mitsuasa, Method for manufacturing thin film transistor.
  35. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.
  36. Zhang Hongyong,JPX ; Takayama Toru,JPX, Method for producing a semiconductor device including doping with a catalyst that is a group IV element.
  37. Zhang, Hongyong; Takemura, Yasuhiko; Takayama, Toru, Method for producing semiconductor device.
  38. Yamazaki Shunpei,JPX, Method of adjusting the threshold voltage in an SOI CMOS.
  39. Fukunaga,Takeshi; Ohtani,Hisashi; Miyanaga,Akiharu, Method of fabricating a semiconductor device utilizing a catalyst material solution.
  40. Zhang Hongyong,JPX ; Teramoto Satoshi,JPX, Method of fabricating a thin film transistor.
  41. Zhang, Hongyong; Teramoto, Satoshi, Method of fabricating a thin film transistor.
  42. Yamazaki,Shunpei; Tanaka,Koichiro, Method of flattening a crystallized semiconductor film surface by using a plate.
  43. Ohtani, Hisashi, Method of forming crystalline silicon film.
  44. Zhang, Hongyong; Uochi, Hideki; Miyanaga, Akira; Ohtani, Hisashi, Method of forming semiconductor device by crystallizing amorphous silicon and forming crystallization promoting material in the same chamber.
  45. Shunpei Yamazaki JP, Method of manufacturing a TFT with Ge seeded amorphous Si layer.
  46. Ohnuma, Hideto; Yamazaki, Shunpei; Nakajima, Setsuo; Ohtani, Hisashi, Method of manufacturing a semiconductor device.
  47. Yamamoto Yoshitaka,JPX ; Suzawa Hideomi,JPX ; Awane Katunobu,JPX ; Funada Fumiaki,JPX ; Yamazaki Shunpei,JPX, Method of manufacturing a semiconductor device.
  48. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Method of manufacturing a semiconductor device.
  49. Yamazaki, Shunpei; Nakajima, Setsuo; Miyairi, Hidekazu, Method of manufacturing a semiconductor device.
  50. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
  51. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method of manufacturing a semiconductor device including reduction of a catalyst.
  52. Ohtani Hisashi,JPX, Method of manufacturing a thin film transistor involving laser treatment.
  53. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Method of producing semiconductor device.
  54. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Miyanaga Akira,JPX ; Ohtani Hisashi,JPX, Method of promoting crystallization of an amorphous semiconductor film using organic metal CVD.
  55. Fonash Stephen J. ; Kingi Reece,NZX ; Kalkan Ali K., Methods for modifying solid phase crystallization kinetics for A-Si films.
  56. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
  57. Ohtani Hisashi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Yamazaki Shunpei,JPX, Semiconductor circuit having a crystal growth in an active layer where a specific distance is established between a selected portion and where the growth starts to the active layer of the circuit.
  58. Akiharu Mitanaga JP; Hisashi Ohtani JP; Satoshi Teramoto JP, Semiconductor device.
  59. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.
  60. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
  61. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
  62. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
  63. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  64. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  65. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
  66. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
  67. Yamazaki Shunpei,JPX, Semiconductor device and manufacturing method thereof.
  68. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
  69. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.
  70. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  71. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  72. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
  73. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  74. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  75. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  76. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  77. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
  78. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
  79. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.
  80. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  81. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  82. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  83. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
  84. Yamazaki, Shunpei; Takemura, Yasuhiko; Zhang, Hongyong, Semiconductor device and method of forming the same.
  85. Isobe, Atsuo; Yamazaki, Shunpei; Kokubo, Chiho; Tanaka, Koichiro; Shimomura, Akihisa; Arao, Tatsuya; Miyairi, Hidekazu, Semiconductor device and method of manufacturing the same.
  86. Isobe, Atsuo; Yamazaki, Shunpei; Kokubo, Chiho; Tanaka, Koichiro; Shimomura, Akihisa; Arao, Tatsuya; Miyairi, Hidekazu; Akiba, Mai, Semiconductor device and method of manufacturing the same.
  87. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  88. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  89. Ohtani,Hisashi; Takano,Tamae; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.
  90. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
  91. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
  92. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
  93. Kokubo, Chiho; Shiga, Aiko; Yamazaki, Shunpei; Miyairi, Hidekazu; Dairiki, Koji; Tanaka, Koichiro, Semiconductor device having multichannel transistor.
  94. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.
  95. Hoffman, Randy L.; Herman, Gregory S.; Mardilovich, Peter P., Semiconductor device with multiple component oxide channel.
  96. Noguchi Takashi,JPX ; Ikeda Yuji,JPX, Semiconductor material.
  97. Donna K. Johnson ; Jerome B. Lasky ; Glenn R. Miller, Semiconductor temperature monitor.
  98. Johnson, Donna K.; Lasky, Jerome B.; Miller, Glenn R., Semiconductor temperature monitor.
  99. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  100. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  101. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.
  102. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
  103. Yamazaki, Shunpei, Transistor having source/drain with graded germanium concentration.
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