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[미국특허] Chemical mechanical polishing device for a semiconductor wafer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-029/00
  • C23F-001/04
출원번호 US-0760218 (1996-12-04)
우선권정보 JP-0317884 (1995-12-06)
발명자 / 주소
  • Shiraishi Yasushi,JPX
출원인 / 주소
  • NEC Corporation, JPX
대리인 / 주소
    Sughrue, Mion, Zinn, Macpeak & Seas, PLLC
인용정보 피인용 횟수 : 63  인용 특허 : 3

초록

In a chemical mechanical polishing (CMP) device, a semiconductor wafer is held by a carrier with its surface to be polished facing upward. A polishing belt is fed from one reel and taken up by the other reel by way of pulleys, running in contact with the surface of the wafer to be polished. A condit

대표청구항

[ What is claimed is:] [1.] A chemical mechanical polishing (CMP) device for polishing a work surface of a semiconductor wafer, comprising:a carrier for holding the semiconductor wafer such that the work surface faces upwards;a porous pad having a polishing side facing downwards for contacting the w

이 특허에 인용된 특허 (3) 인용/피인용 타임라인 분석

  1. Lund Douglas E. (13304 Purple Sage Dallas TX 75240), Automatic chemical and mechanical polishing system for semiconductor wafers.
  2. Homma Tetsuya (Tokyo JPX), Method of manufacturing semiconductor device using the abrasive.
  3. Weldon David E. (Los Gatos CA) Nagorski Boguslaw A. (San Jose CA) Talieh Homayoun (San Jose CA), Wafer polishing machine with fluid bearings and drive systems.

이 특허를 인용한 특허 (63) 인용/피인용 타임라인 분석

  1. Young, Douglas W.; Perlov, Vulf; Velazquez, Efrain, Advanced Bi-directional linear polishing system and method.
  2. Talieh, Homayoun; Volodarsky, Konstantin; Ashjaee, Jalal; Young, Douglas W., Apparatus and method for loading a wafer in polishing system.
  3. John M. White ; Phillip R. Sommer, Apparatus for chemical mechanical planarization having nested load cups.
  4. Tietz,James V.; Li,Shijian; Birang,Manoocher; White,John M.; Rosenberg, legal representative,Sandra L.; Scales,Marty; Emami,Ramin; Rosenberg, deceased,Lawrence M., Article for polishing semiconductor substrates.
  5. Steckenrider,J. Scott; Snider,Gary W., Continuous contour polishing of a multi-material surface.
  6. Basol,Bulent M.; Talieh,Homayoun, Electrochemical mechanical processing apparatus.
  7. Dinesh Chopra ; Gundu Sabde, Fixed abrasive chemical-mechanical planarization of titanium nitride.
  8. Chopra, Dinesh; Sabde, Gundu, Fixed-abrasive chemical-mechanical planarization of titanium nitride.
  9. Chopra,Dinesh; Sabde,Gundu, Fixed-abrasive chemical-mechanical planarization of titanium nitride.
  10. Chopra,Dinesh; Sabde,Gundu, Fixed-abrasive chemical-mechanical planarization of titanium nitride.
  11. Talieh, Homayoun; Young, Douglas W., Fluid bearing slide assembly for workpiece polishing.
  12. Osterheld, Thomas H., Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile.
  13. Krusell, Wilbur; Travis, Glenn; Engdahl, Erik; Bagley, James, Linear reciprocating disposable belt polishing method and apparatus.
  14. Wilbur Krusell ; Glenn Travis ; Erik Engdahl ; James Bagley, Linear reciprocating disposable belt polishing method and apparatus.
  15. Basol,Bulent M.; Uzoh,Cyprian E.; Bogart,Jeffrey A., Low-force electrochemical mechanical processing method and apparatus.
  16. Bonner,Benjamin A.; McReynolds,Peter; Menk,Gregory E.; Iyer,Anand N.; Prabhu,Gopalakrishna B.; Rondum,Erik S.; Jackson,Robert L.; Leung,Garlen, Materials for chemical mechanical polishing.
  17. Bonner,Benjamin A.; McReynolds,Peter; Menk,Gregory E.; Iyer,Anand N.; Prabhu,Gopalakrishna B.; Rondum,Erik S.; Jackson,Robert L.; Leung,Garlen, Materials for chemical mechanical polishing.
  18. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  19. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  20. John M. Boyd ; Michael S. Lacy, Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  21. Boyd, John M., Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path.
  22. Moore Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  23. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  24. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  25. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  26. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  27. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  28. Scott E. Moore, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  29. Scott E. Moore, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  30. Scott E. Moore, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  31. Scott E. Moore, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  32. Gundu M. Sabde ; Scott Meikle, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
  33. Gundu M. Sabde ; Scott Meikle, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
  34. Gundu M. Sabde ; Scott Meikle, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
  35. Sabde Gundu M. ; Meikle Scott, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
  36. Sabde, Gundu M.; Meikle, Scott, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
  37. Sabde, Gundu M.; Meikle, Scott, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
  38. Moore, Scott E., Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface.
  39. Moore, Scott E., Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface.
  40. Moore, Scott E., Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface.
  41. Moore, Scott E., Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface.
  42. Moore,Scott E., Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface.
  43. Moore,Scott E., Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface.
  44. Moore,Scott E., Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface.
  45. Crevasse Annette Margaret ; Easter William Graham ; Maze John Albert ; Miceli ; III Frank, Method for making porous CMP article.
  46. Taylor, Theodore M., Method for securing a subpad to a subpad support.
  47. Richard Faubert ; John A. Adams, Method for selective removal of copper.
  48. Taylor,Theodore M., Method of replacing a subpad of a polishing apparatus.
  49. Xu, Cangshan; Zhao, Eugene Y.; Dai, Fen, Methods for making reinforced wafer polishing pads and apparatuses implementing the same.
  50. Homayoun Talieh ; Konstantin Volodarsky ; Jalal Ashjaee ; Douglas W. Young, Polishing apparatus and method with a refreshing polishing belt and loadable housing.
  51. Homayoun Talieh ; Konstantin Volodarsky ; Jalal Ashjaee ; Douglas W. Young, Polishing apparatus and method with belt drive system adapted to extend the lifetime of a refreshing polishing belt provided therein.
  52. Talieh, Homayoun; Volodarsky, Konstantin; Ashjaee, Jalal; Young, Douglas W., Polishing apparatus and method with belt drive system adapted to extend the lifetime of a refreshing polishing belt provided therein.
  53. Gotkis, Yehiel; Owczarz, Aleksander A.; Kistler, Rodney, Polishing pad ironing system and method for implementing the same.
  54. Cheng Tsungnan ; Wilson Ethan C. ; Chang Shou-sung ; Lee Gregory C. ; Tzeng Huey M. ; Weldon David E. ; Can Linh X. ; Lau Luis ; Yang Siyuan, Polishing pad shaping and patterning.
  55. Chopra Dinesh, Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies.
  56. Chopra, Dinesh, Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies.
  57. Dinesh Chopra, Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies.
  58. Talieh Homayoun, Reverse linear chemical mechanical polisher with loadable housing.
  59. Taylor,Theodore M., Subpad support with a releasable subpad securing element and polishing apparatus including the subpad support.
  60. Taylor,Theodore M., Subpad support with releasable subpad securing element and polishing apparatus.
  61. Basol, Bulent M.; Talieh, Homayoun, System and method for electrochemical mechanical polishing.
  62. Shijian Li ; John M. White ; Lawrence M. Rosenberg ; Martin Scales ; Ramin Emami ; James V. Tietz ; Manoocher Birang, System for chemical mechanical planarization.
  63. Cangshan Xu ; Brian S. Lombardo, Unsupported chemical mechanical polishing belt.

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