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Integrated circuit memory device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-017/06
출원번호 US-0804864 (1997-02-24)
발명자 / 주소
  • Harshfield Steven T.
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Fletcher, Yoder & Edwards
인용정보 피인용 횟수 : 218  인용 특허 : 6

초록

A memory array using structure changing memory elements in a reverse biased diode array is disclosed. A memory cell is programmed and read by reverse biasing the diode to overcome the diode's breakdown voltage. The disclosed reversed biased diode array exhibits much less substrate current leakage th

대표청구항

[ What is claimed is:] [1.] A memory cell for use in an integrated circuit memory device, said memory cell comprising:a memory element; anda diode having a breakdown voltage and being coupled to said memory element, said memory element being programmable in response to a programming voltage having a

이 특허에 인용된 특허 (6)

  1. Ovshinsky Stanford R. (Bloomfield Hills MI) Czubatyj Wolodymyr (Warren MI) Ye Quiyi (Rochester MI) Strand David A. (West Bloomfield MI) Hudgens Stephen J. (Southfield MI), Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom.
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  4. Roesner Bruce B. (18737 Lunada Point San Diego CA 92128) Hays William L. (473 Coronado Hills Dr. San Marcos CA 92069), Reduced-area, read-only memory.
  5. Ovshinsky Stanford R. (Bloomfield Hills MI) Wicker Guy (Southfield MI), Vertically interconnected parallel distributed processor.
  6. Harshfield Steven T. (Emmett ID), Zener programmable read only memory.

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