초록 ▼

A process for forming a semiconductor device (68) in which an insulating layer (52) is nitrided and then covered by a thin adhesion layer (58) before depositing a composite copper layer (62). This process does not require a separate diffusion barrier as a portion of the insulating layer (52) has bee

A process for forming a semiconductor device (68) in which an insulating layer (52) is nitrided and then covered by a thin adhesion layer (58) before depositing a composite copper layer (62). This process does not require a separate diffusion barrier as a portion of the insulating layer (52) has been converted to form a diffusion barrier film (56). Additionally, the adhesion layer (58) is formed such that it can react with the interconnect material resulting in strong adhesion between the composite copper layer (62) and the diffusion barrier film (56) as well as allow a more continuous interconnect and via structure that is more resistant to electromigration.

대표청구항 ▼

[ I claim:] [1.] A process for forming a semiconductor device comprising the steps of:forming a patterned insulating layer over a substrate, wherein the patterned insulating layer includes an opening;converting a portion of the patterned insulating layer to a barrier film;depositing an adhesion laye

[ I claim:] [1.] A process for forming a semiconductor device comprising the steps of:forming a patterned insulating layer over a substrate, wherein the patterned insulating layer includes an opening;converting a portion of the patterned insulating layer to a barrier film;depositing an adhesion layer over the barrier film; andforming a conductive metal-containing layer over the adhesion layer.