초록 ▼

Methods and apparatus for fabricating semiconductors by producing a corona discharge plasma comprising an intense beam of high-energy particles, supersonically expanding the plasma, and defining and directing the plasma toward a substrate, are disclosed. A discharge system including a corona dischar

Methods and apparatus for fabricating semiconductors by producing a corona discharge plasma comprising an intense beam of high-energy particles, supersonically expanding the plasma, and defining and directing the plasma toward a substrate, are disclosed. A discharge system including a corona discharge nozzle, a source body, a molecular beam skimmer, and a thin-film vacuum deposition chamber is used to deposit or modify a thin film on a substrate. A gas to be activated is supplied to the corona discharge nozzle at a relatively high pressure in comparison to the pressure inside the source body. A corona discharge is generated within an orifice of the nozzle. Energy from the discharge is transferred to the gas particles creating a corona discharge plasma of high-energy particles. As the plasma exits the nozzle orifice, the plasma is supersonically expanded inside the source body. A molecular beam skimmer defines and directs the plasma toward a substrate within a thin-film vacuum deposition chamber.

대표청구항 ▼

[ I claim:] [1.] A method of making a semiconductor, the method comprising the steps of:generating a corona discharge plasma primarily comprising high-energy particles;supersonically expanding the plasma as the plasma exits a nozzle; andpassing the expanded plasma through a molecular beam skimmer an

[ I claim:] [1.] A method of making a semiconductor, the method comprising the steps of:generating a corona discharge plasma primarily comprising high-energy particles;supersonically expanding the plasma as the plasma exits a nozzle; andpassing the expanded plasma through a molecular beam skimmer and onto a substrate.