초록 ▼

Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced

Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising:a substrate;an amorphous silicon film provided on the substrate;a slit-like introduction region formed in the amorphous silicon, the slit-like introduction region having therein a catalyst element for accelerating crystallization of at le

[ What is claimed is:] [1.] A semiconductor device comprising:a substrate;an amorphous silicon film provided on the substrate;a slit-like introduction region formed in the amorphous silicon, the slit-like introduction region having therein a catalyst element for accelerating crystallization of at least a portion of the amorphous silicon film;the at least a portion of the amorphous silicon film to be crystallized including a thin film transistor region;the thin film transistor region not overlapping the slit-like introduction region, andat least one of a length in a longer side direction and a width in a shorter side direction of the slit-like introduction region is set larger than a value at which a crystal growth range of the crystalline silicon film saturates.