초록 ▼

An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer. The system includes a semiconductor wafer emissivity compensation station for measuring the reflectivity of the wafer at discrete wavelengths to yield wafer emissivity in specific wavelength bands.

An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer. The system includes a semiconductor wafer emissivity compensation station for measuring the reflectivity of the wafer at discrete wavelengths to yield wafer emissivity in specific wavelength bands. The system further includes a measurement probe which is optically coupled to a semiconductor process chamber. The probe senses wafer self emission using one or more optical detectors and a light modulator. A background temperature determining mechanism independently senses the temperature of a source of background radiation. Finally, a mechanism calculates the temperature of the semiconductor wafer based on the reflectivity, self-emission and background temperature.

대표청구항 ▼

[ What is claimed is:] [12.] An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer, comprising:(a) a semiconductor wafer emissivity compensation station for measuring the reflectivity of said wafer at discrete wavelengths;(b) a measurement probe which i

[ What is claimed is:] [12.] An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer, comprising:(a) a semiconductor wafer emissivity compensation station for measuring the reflectivity of said wafer at discrete wavelengths;(b) a measurement probe which is optically coupled to a semiconductor process chamber, said probe sensing wafer self emission by means of at least one optical detector and a light modulator, each of said at least one optical detector being optically coupled to the wafer by means of a transparent rod, said process chamber including a reflective cavity surface between said transparent rod and the wafer;(c) background temperature determining means for independently sensing the temperature of a source of background radiation; and(d) means for calculating the temperature of said semiconductor wafer based on said reflectivity, self-emission and background temperature.