초록 ▼

A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the first semiconductor film to form a region th

A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the first semiconductor film to form a region that forms a seed crystal; etching the seed crystal to selectively leave a predetermined crystal face in the seed crystal; covering the seed crystal to form a second semiconductor film; and applying an energy to the second semiconductor film to conduct a crystal growth from the seed crystal in the second semiconductor film.

대표청구항 ▼

[ What is claimed is:] [1.] A method of manufacturing a semiconductor, comprising:forming a first semiconductor film on a substrate having an insulating surface;applying a first energy to said first semiconductor film to crystallize said first semiconductor film;patterning said first semiconductor f

[ What is claimed is:] [1.] A method of manufacturing a semiconductor, comprising:forming a first semiconductor film on a substrate having an insulating surface;applying a first energy to said first semiconductor film to crystallize said first semiconductor film;patterning said first semiconductor film to form a region as a seed crystal;etching said seed crystal to selectively leave a crystal face in an upper face of said seed crystal;forming a second semiconductor film to cover said upper face of seed crystal; andapplying a second energy to said second semiconductor film to conduct a crystal growth starting from said seed crystal in said second semiconductor film, to form a single crystal or a substantially single crystal with said crystal face in an upper face of said second semiconductor film.