초록 ▼

In one aspect of the present invention a gate drive circuit is disclosed. The gate drive circuit includes a first voltage source, a power transistor, a first and second switching device, and a controller. The power transistor has a drain connected to the first voltage source and a source connected t

In one aspect of the present invention a gate drive circuit is disclosed. The gate drive circuit includes a first voltage source, a power transistor, a first and second switching device, and a controller. The power transistor has a drain connected to the first voltage source and a source connected to a load. The first switching device is connected to the power transistor gate and biases the power transistor ON to transfer energy from the first voltage source to the load. The second switching device is connected to the power transistor gate and biases the power transistor OFF to block the transfer of energy from the first voltage source to the load. The controller is connected to the first and second switching device and controls the power transistor at a first state where the first switching device biases the power transistor ON, controls the power transistor at a second state where the second switching device biases the power transistor OFF and provides a signal path from the power transistor gate to ground, and controls the power transistor at a third state where the second switching device biases the power transistor OFF to protect the second switching device from short circuit voltages in response to the controller detecting a short circuit condition in the power transistor.

대표청구항 ▼

[ We claim:] [1.] A gate drive circuit, comprising:a first voltage source;a power transistor having a drain connected to the first voltage source and a source connected to a load;a first switching device connected to the power transistor gate for biasing the power transistor ON to transfer energy fr

[ We claim:] [1.] A gate drive circuit, comprising:a first voltage source;a power transistor having a drain connected to the first voltage source and a source connected to a load;a first switching device connected to the power transistor gate for biasing the power transistor ON to transfer energy from the first voltage source to the load;a second switching device connected to the power transistor gate for biasing the power transistor OFF to block the transfer of energy from the first voltage source to the load; anda controller connected to the first and second switching device for controlling the power transistor at a first state where the first switching device biases the power transistor ON, for controlling the power transistor at a second state where the second switching device biases the power transistor OFF and provides a signal path from the power transistor gate to ground, and for controlling the power transistor at a third state where the second switching device biases the power transistor OFF to isolate the second switching device from short circuit voltages in response to the controller detecting a short circuit condition from the first voltage source to the load.