초록 ▼

A p-i-n structure for use in photoconductors and diodes is disclosed, being formed of an Al.sub.x Ga.sub.1-x N alloy (X=0.fwdarw.1) with In.sub.y Ga.sub.1-Y N (Y=0.fwdarw.1) which as grown by MOCVD procedure with the p-type layer adjacent the substrate. In the method of the subject invention, buffer

A p-i-n structure for use in photoconductors and diodes is disclosed, being formed of an Al.sub.x Ga.sub.1-x N alloy (X=0.fwdarw.1) with In.sub.y Ga.sub.1-Y N (Y=0.fwdarw.1) which as grown by MOCVD procedure with the p-type layer adjacent the substrate. In the method of the subject invention, buffer layers of p-type material are grown on a substrate and then doped. The active, confinement and cap layers of n-type material are next grown and doped. The structure is masked and etched as required to expose a surface which is ion implanted and annealed. A p-type surface contact is formed on this ion-implanted surface which is of sufficiently low resistance as to provide good quality performance for use in a device.

대표청구항 ▼

[ What is claimed is:] [1.] A method of growing a III-V nitride compound semiconductor, comprising the steps of:a) providing a substrate;b) growing a buffer layer on said substrate;c) growing, doping and annealing a p-type lower contact layer on said buffer layer;d) growing, doping and annealing a p

[ What is claimed is:] [1.] A method of growing a III-V nitride compound semiconductor, comprising the steps of:a) providing a substrate;b) growing a buffer layer on said substrate;c) growing, doping and annealing a p-type lower contact layer on said buffer layer;d) growing, doping and annealing a p-type lower confinement layer over said lower contact layer;e) growing an active layer over said lower confinement layer;f) growing and doping an n-type upper confinement layer over said active layer;g) growing an upper n-type contact layer over said upper confinement layer;h) doping said upper contact layer and thereby forming an unfinished structure;i) masking and etching said unfinished structure to expose said lower contact layer;j) ion implanting said exposed lower contact area with ions selected from the Group consisting of Ag, Hg, Cu, Si and Ge; andk) making an ohmic contact on each of said n-type and p-type contact layers to form said III-V nitride compound semiconductor.