이 특허를 인용한 특허 (221)

1. Chandran, Shankar W.; Hendrickson, Scott; Jones, Gwendolyn D.; Venkataraman, Shankar; Yieh, Ellie, Accelerated plasma clean.

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2. Chandran,Shankar N.; Hendrickson,Scott; Jones,Gwendolyn D.; Venkataraman,Shankar; Yieh,Ellie, Accelerated plasma clean.

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3. Nemani, Srinivas D.; Koshizawa, Takehito, Air gap process.

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4. Purayath, Vinod R.; Ingle, Nitin K., Air gaps between copper lines.

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5. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.

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6. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum oxide selective etch.

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7. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum selective etch.

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8. Xue, Jun; Hsu, Ching-Mei; Li, Zihui; Godet, Ludovic; Wang, Anchuan; Ingle, Nitin K., Anisotropic gap etch.

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9. Cook Robert C., Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor.

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10. Chistyakov, Roman; Abraham, Bassam Hanna, Apparatus and method for sputtering hard coatings.

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11. Oakley Thomas Franklin ; Turner Barry Gaskins, Apparatus and method for supplying fluids to a plasma arc torch.

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12. Oakley Thomas Franklin ; Turner Barry Gaskins, Apparatus and method for supplying fluids to a plasma arc torch.

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13. Lubomirsky,Dmitry; Shanmugasundram,Arulkumar; Pancham,Ian A.; Lopatin,Sergey, Apparatus for electroless deposition.

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14. Harvey,Keith; Janakiraman,Karthik; Floyd,Kirby, Backflush chamber clean.

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15. Rocha Alvarez, Juan Carlos; Balasubramanian, Ganesh; Cho, Tom K.; Padhi, Deenesh; Nowak, Thomas; Kim, Bok Hoen; M'Saad, Hichem; Raj, Daemian, Blocker plate bypass to distribute gases in a chemical vapor deposition system.

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16. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.

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17. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.

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18. Lubomirsky, Dmitry, Chamber with flow-through source.

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19. Lubomirsky, Dmitry, Chamber with flow-through source.

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20. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.

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21. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.

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22. Wang, Xikun; Pandit, Mandar; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K.; Liu, Jie, Chlorine-based hardmask removal.

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23. Wood, Bingxi Sun; Kawaguchi, Mark N.; Papanu, James S.; Mosely, Roderick C.; Lai, Chiukun Steven; Kao, Chien Teh; Ai, Hua; Wang, Wei W., Cleaning of native oxide with hydrogen-containing radicals.

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24. Wang, Xikun; Cui, Zhenjiang; Park, Soonam; Ingle, Nitin K., Cobalt-containing material removal.

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25. Lubomirsky, Dmitry; Kim, Sung Je, Conditioned semiconductor system parts.

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26. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.

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27. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.

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28. Hoinkis, Mark; Yan, Chun; Miyazoe, Hiroyuki; Joseph, Eric, Copper residue chamber clean.

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29. Becker, Volker; Laermer, Franz; Schilp, Andrea; Beck, Thomas, DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAM.

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30. Zhu, Lina; Kang, Sean S.; Nemani, Srinivas D.; Kao, Chia-Ling, Delicate dry clean.

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31. Borean, Christophe; Delcarri, Jean-Luc, Device and process for chemical vapor phase treatment.

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32. Sandhu, Gurtej S.; Sharan, Sujit, Device for in-situ cleaning of an inductively-coupled plasma chambers.

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33. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.

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34. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.

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35. Purayath, Vinod R.; Wang, Anchuan; Ingle, Nitin K., Dopant etch selectivity control.

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36. Welch Michael D. ; Shan Homgqing ; Luscher Paul E. ; Lee Evans Y. ; Carducci James D. ; Salimian Siamak, Double slit-valve doors for plasma processing.

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37. Welch, Michael D.; Shan, Homgqing; Luscher, Paul E.; Lee, Evans Y.; Carducci, James D.; Salimian, Siamak, Double slit-valve doors for plasma processing.

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38. Zhang, Jingchun; Ingle, Nitin K.; Wang, Anchuan, Dry etch process.

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39. Kim, Sang Hyuk; Yang, Dongqing; Lee, Young S.; Jung, Weon Young; Kim, Sang-jin; Hsu, Ching-Mei; Wang, Anchuan; Ingle, Nitin K., Dry-etch for selective oxidation removal.

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40. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.

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41. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.

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42. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Wang, Yunyu; Lee, Young, Dry-etch for silicon-and-carbon-containing films.

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43. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.

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44. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.

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45. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Dual discharge modes operation for remote plasma.

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46. Ingle, Nitin K.; Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Enhanced etching processes using remote plasma sources.

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47. Cheung, David; Fang, Haoquan; Kuo, Jack; Kalinovski, Ilia; Li, Ted; Yao, Andrew, Enhanced passivation process to protect silicon prior to high dose implant strip.

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48. Nowak, Thomas; Latchford, Ian; Tanaka, Tsutomu; Kim, Bok Heon; Xu, Ping; Foster, Jason; DeShong, Heath B.; Seamons, Martin, Enhanced remote plasma cleaning.

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49. Korolik, Mikhail; Ingle, Nitin K.; Zhang, Jingchun; Wang, Anchuan; Liu, Jie, Etch suppression with germanium.

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50. Bluck, Terry; Barnes, Michael S.; Fairbairn, Kevin P., Evaporative system for solar cell fabrication.

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51. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Even tungsten etch for high aspect ratio trenches.

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52. Huang Wen-Liang,TWX, Find end point of CLF3 clean by pressure change.

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53. Purayath, Vinod R.; Ingle, Nitin K., Flash gate air gap.

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54. Huseinovic, Armin; Berry, Ivan L., Fluid distribution members and/or assemblies.

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55. Goto, Haruhiro Harry; Harshbarger, William R.; Shang, Quanyuan; Law, Kam S., Fluorine process for cleaning semiconductor process chamber.

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56. Pandit, Mandar; Wang, Xikun; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Fluorine-based hardmask removal.

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57. Tepman Avi, Front end vacuum processing environment.

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58. White, Carl L.; Shero, Eric; Reed, Joe, Gap maintenance for opening to process chamber.

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59. Murugesh,Laxman; Krishnaraj,Padmanabhan; Dunham,Carl, Gas distributor having directed gas flow and cleaning method.

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60. Park, Seung; Wang, Xikun; Liu, Jie; Wang, Anchuan; Kim, Sang-jin, Gas-phase tungsten etch.

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61. Kim, Sung Je; Kalita, Laksheswar; Pareek, Yogita; Kadam, Ankur; Goradia, Prerna Sonthalia; Thakur, Bipin; Lubomirsky, Dmitry, Generation of compact alumina passivation layers on aluminum plasma equipment components.

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62. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.

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63. Cho, Tae; Kang, Sang Won; Yang, Dongqing; Lu, Raymond W.; Hillman, Peter; Celeste, Nicholas; Tan, Tien Fak; Park, Soonam; Lubomirsky, Dmitry, Grooved insulator to reduce leakage current.

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64. Goto, Haruhiro Harry; Cheung, David, High dose implantation strip (HDIS) in H2 base chemistry.

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65. Goto, Haruhiro Harry; Cheung, David, High dose implantation strip (HDIS) in H2 base chemistry.

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66. Goto, Haruhiro Harry; Cheung, David, High dose implantation strip (HDIS) in H2 base chemistry.

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67. Tran, Toan Q.; Malik, Sultan; Lubomirsky, Dmitry; Roy, Shambhu N.; Kobayashi, Satoru; Cho, Tae Seung; Park, Soonam; Venkataraman, Shankar, High temperature chuck for plasma processing systems.

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68. Chen, Zhijun; Li, Zihui; Ingle, Nitin K.; Wang, Anchuan; Venkataraman, Shankar, Highly selective doped oxide removal method.

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69. Felsenthal David ; Lee Chunghsin ; Sferlazzo Piero, In-line sputter deposition system.

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70. Chen, Xinglong; Lubomirsky, Dmitry; Venkataraman, Shankar, Insulated semiconductor faceplate designs.

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71. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.

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72. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.

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73. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Integrated oxide and nitride recess for better channel contact in 3D architectures.

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74. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated oxide recess and floating gate fin trimming.

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75. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.

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76. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.

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77. Nguyen, Son T.; Lubomirsky, Dmitry, Layered thin film heater and method of fabrication.

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78. Kevin Fairbairn ; Howard E. Grunes ; Christopher Lane ; Kelly A. Colborne, Load-lock with external staging area.

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79. Cheung, David; Li, Ted; Guha, Anirban; Ostrowski, Kirk, Low damage photoresist strip method for low-K dielectrics.

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80. Hsu, Ching-Mei; Ingle, Nitin K.; Hamana, Hiroshi; Wang, Anchuan, Low temperature gas-phase carbon removal.

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81. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Metal air gap.

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82. Robert C. Cook ; Daniel L. Brors, Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors.

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83. Paranjpe,Ajit P., Method and apparatus for layer by layer deposition of thin films.

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84. Reed, Joseph C; Shero, Eric J, Method and apparatus for minimizing contamination in semiconductor processing chamber.

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85. Zheng, Yi; Singh, Vinita; Nemani, Srinivas D.; Chen, Chen-An; Lee, Ju-Hyung; Venkataraman, Shankar, Method for cleaning a process chamber.

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86. Kao, Chien-Teh; Chou, Jing-Pei (Connie); Lai, Chiukin (Steven); Umotoy, Sal; Huston, Joel M.; Trinh, Son; Chang, Mei; Yuan, Xiaoxiong (John); Chang, Yu; Lu, Xinliang; Wang, Wei W.; Phan, See-Eng, Method for front end of line fabrication.

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87. Reed, Joseph C.; Shero, Eric J., Method for minimizing contamination in semiconductor processing chamber.

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88. Chen, David L.; Su, Yuh-Jia; Chiu, Eddie Ka Ho; Pozzoli, Maria Paola; Li, Senzi; Colangelo, Giuseppe; Alba, Simone; Petroni, Simona, Method for post-etch cleans.

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89. Rossman, Kent, Method of cleaning a semiconductor processing chamber.

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90. Ko, Jungmin, Method of fin patterning.

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91. Chistyakov, Roman, Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities.

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92. Chistyakov, Roman; Abraham, Bassam Hanna, Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities.

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93. Chistyakov,Roman, Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities.

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94. Chistyakov,Roman, Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities.

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95. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.

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96. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.

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97. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of metal and metal-oxide films.

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98. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.

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99. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of sin films.

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100. Chen, David; Goto, Haruhiro Harry; Martina, Martina; Greer, Frank; Alokozai, Shamsuddin, Methods for stripping photoresist and/or cleaning metal regions.

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101. Chen, David; Goto, Haruhiro Harry; Su, Martina; Greer, Frank; Alokozai, Shamsuddin, Methods for stripping photoresist and/or cleaning metal regions.

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102. Hong, Sukwon; Hamana, Hiroshi; Liang, Jingmei, Methods of reducing substrate dislocation during gapfill processing.

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103. Balasubramanian, Ganesh; Rocha-Alvarez, Juan Carlos; Cho, Tom K.; Raj, Daemian, Methods of uniformity control for low flow process and chamber to chamber matching.

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104. Daniel L. Brors ; Robert C. Cook, Mini-batch process chamber.

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105. Felsenthal David ; Lee Chunghsin ; Sferlazzo Piero, Multi-layer sputter deposition apparatus.

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106. Hua,Zhong Qiang; Tan,Zhengquan; Li,Zhuang; Rossman,Kent, Multistep remote plasma clean process.

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107. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.

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108. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.

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109. Shang, Quanyuan; Yadav, Sanjay; Harshbarger, William R.; Law, Kam S., On-site cleaning gas generation for process chamber cleaning.

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110. Shang,Quanyuan; Yadav,Sanjay; Harshbarger,William R.; Law,Kam S., On-site cleaning gas generation for process chamber cleaning.

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111. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K.; Anthis, Jeffrey W.; Schmiege, Benjamin, Oxide and metal removal.

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112. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.

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113. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.

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114. Xu, Lin; Chen, Zhijun; Wang, Anchuan; Nguyen, Son T., Oxide etch selectivity systems and methods.

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115. Lubomirsky, Dmitry, Oxygen compatible plasma source.

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116. Yang, Haichun; Lu, Xinliang; Kao, Chien-Teh; Chang, Mei, Passivation layer formation by plasma clean process to reduce native oxide growth.

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117. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.

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118. Thedjoisworo, Bayu Atmaja; Jacobs, Bradley Jon; Berry, Ivan; Cheung, David, Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films.

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119. Goto, Haruhiro Harry; Kalinovski, Ilia; Mohamed, Khalid, Photoresist strip method for low-k dielectrics.

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120. Shaviv, Roey; Ostrowski, Kirk; Cheung, David; Park, Joon; Thedjoisworo, Bayu; Lord, Patrick J., Photoresist strip processes for improved device integrity.

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121. Becknell, Alan Frederick; Buckley, Thomas James; Ferris, David; Pingree, Jr., Richard E.; Sakthivel, Palanikumaran; Srivastava, Aseem Kumar; Waldfried, Carlo, Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith.

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122. Srivastava, Aseem Kumar; Sakthivel, Palanikumaran; Buckley, Thomas James, Plasma ashing apparatus and endpoint detection process.

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123. Cheung, David; Ostrowski, Kirk J, Plasma based photoresist removal system for cleaning post ash residue.

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124. Cheung, David; Ostrowski, Kirk J., Plasma based photoresist removal system for cleaning post ash residue.

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125. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.

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126. Boulos, Maher I.; Jurewicz, Jerzy; Guo, Jiayin, Plasma reactor for the synthesis of nanopowders and materials processing.

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127. Lee, Sang In; Lee, Ilsong; Yang, Hyo Seok, Plasma reactor with conductive member in reaction chamber for shielding substrate from undesirable irradiation.

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128. Lee, Sang In; Lee, Ilsong; Yang, Hyo Seok, Plasma reactor with conductive member in reaction chamber for shielding substrate from undesirable irradiation.

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129. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Plasma-free metal etch.

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130. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Polarity control for remote plasma.

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131. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.

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132. Kellogg, Michael C.; Dhindsa, Rajinder; Stevenson, Tom, Pressure controlled heat pipe temperature control plate.

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133. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.

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134. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.

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135. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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136. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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137. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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138. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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139. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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140. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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141. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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142. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.

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143. Eristoff, D. Guy; Barnes, Michael S.; Wall, Arthur C.; Bluck, Terry, Processing tool with combined sputter and evaporation deposition sources.

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144. Naik, Mehul; Ma, Paul F.; Nemani, Srinivas D., Protective via cap for improved interconnect performance.

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145. Sugiyama, Toru; Nakano, Ryu, Purge step-controlled sequence of processing semiconductor wafers.

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146. Chen, Xinglong; Garg, Saurabh; Yang, Jang-Gyoo, RPS assisted RF plasma source for semiconductor processing.

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147. Chen, Xinglong; Garg, Saurabh; Yang, Jang-Gyoo, RPS assisted RF plasma source for semiconductor processing.

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148. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry, Radial waveguide systems and methods for post-match control of microwaves.

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149. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.

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150. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.

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151. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.

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152. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.

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153. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.

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154. Sorensen, Carl A.; Kudela, Jozef, Remote inductively coupled plasma source for CVD chamber cleaning.

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155. Hua, Zhong Qiang; Kamath, Sanjay; Lee, Young S.; Yieh, Ellie Y.; Le, Hien-Minh Huu; Patel, Anjana M.; Gondhalekar, Sudhir R., Remote plasma clean process with cycled high and low pressure clean steps.

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156. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Remotely-excited fluorine and water vapor etch.

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157. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.

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158. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.

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159. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.

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160. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.

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161. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.

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162. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.

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163. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.

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164. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.

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165. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.

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166. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.

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167. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.

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168. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.

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169. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.

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170. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.

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171. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.

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172. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.

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173. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and nitrogen.

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174. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and oxygen.

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175. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.

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176. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.

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177. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.

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178. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.

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179. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.

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180. Pandit, Mandar B.; Wang, Anchuan; Ingle, Nitin K., Self-aligned process.

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181. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.

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182. Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.

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183. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.

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184. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.

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185. Nguyen, Andrew; Ramaswamy, Kartik; Nemani, Srinivas; Howard, Bradley; Vishwanath, Yogananda Sarode, Semiconductor system assemblies and methods of operation.

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186. Wang,Hougong; Ngan,Kenny King Tai; Xu,Zheng, Semiconductor wafer preheating.

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187. Satoh, Kiyoshi; Sato, Kazuo; Fududa, Hideaki, Semiconductor-processing device provided with a remote plasma source for self-cleaning.

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188. Huston, Joel M., Showerhead assembly.

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189. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.

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190. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.

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191. Korolik, Mikhail; Ingle, Nitin K.; Wang, Anchuan; Xu, Jingjing, Silicon germanium processing.

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192. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.

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193. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.

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194. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.

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195. Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.

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196. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.

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197. Goto, Haruhiro Harry; Cheung, David, Simultaneous front side ash and backside clean.

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198. Luere, Olivier; Kang, Sean S.; Nemani, Srinivas D., Spacer formation.

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199. Klein, Martin P.; Felsenthal, David; Sferlazzo, Piero, Substrate processing pallet and related substrate processing method and machine.

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200. Klein, Martin P.; Felsenthal, David; Sferlazzo, Piero, Substrate processing pallet and related substrate processing method and machine.

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201. Klein, Martin P.; Felsenthal, David; Sferlazzo, Piero, Substrate processing pallet and related substrate processing method and machine.

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202. Kurita, Shinichi; Anwar, Suhail; Kiyotake, Toshio, Substrate support bushing.

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203. Kurita, Shinichi; Anwar, Suhail; Kiyotake, Toshio, Substrate support bushing.

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204. Barnes, Michael S.; Bluck, Terry, System and method for processing substrates with detachable mask.

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205. Scollay, Stuart; Bluck, Terry; Chen, Xiang, System and method for substrate transport.

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206. Fairbairn, Kevin; Barzilai, Jessica; Ponnekanti, Hari K.; Taylor, W. N. (Nick), Tandem process chamber.

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207. Fairbairn, Kevin; Barzilai, Jessica; Ponnekanti, Hari K.; Taylor, W. N. (Nick), Tandem process chamber.

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208. Cook, Robert C.; Brors, Daniel L., Thermal gradient enhanced CVD deposition at low pressure.

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209. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.

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210. Kroeker Tony R., Three chamber load lock apparatus.

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211. Tony R. Kroeker, Three chamber load lock apparatus.

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212. Wang, Xikun; Pandit, Mandar; Wang, Anchuan; Ingle, Nitin K., Titanium nitride removal.

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213. Wang, Xikun; Xu, Lin; Wang, Anchuan; Ingle, Nitin K., Titanium oxide etch.

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214. Liu, Jie; Wang, Xikun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Tungsten oxide processing.

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215. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.

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216. Cheung, David; Fang, Haoquan; Kuo, Jack; Kalinovski, Ilia; Li, Zhao; Yao, Guhua; Guha, Anirban; Ostrowski, Kirk J., Ultra low silicon loss high dose implant strip.

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217. Klein,Martin P.; Keigler,Arthur; Felsenthal,David, Ultra-thin wafer handling system.

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218. Balasubramanian, Ganesh; Rocha Alvarez, Juan Carlos; Cho, Tom K.; Raj, Daemian, Uniformity control for low flow process and chamber to chamber matching.

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219. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.

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220. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.

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221. Stowell, Michael W.; Liang, Qiwei, Workpiece processing chamber having a rotary microwave plasma source.

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