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Method for multi-zone high-density inductively-coupled plasma generation 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/461
출원번호 US-0678065 (1996-07-10)
발명자 / 주소
  • Moslehi Mehrdad M.
출원인 / 주소
  • CVC, Inc.
대리인 / 주소
    Gray Cary Ware & Freidenrich, LLP
인용정보 피인용 횟수 : 74  인용 특허 : 0

초록

Another aspect of this invention is a hermetically-sealed inductively-coupled plasma source structure and method of fabrication which eliminates the possibility of process contamination, improves the source hardware reliability and functionality, and improves the vacuum integrity and ultimate base p

대표청구항

[ What is claimed is:] [1.] A method for producing a plasma in a plasma processing equipment having a plasma processing chamber, comprising the steps of:producing a plasma from a plasma process gas using a first inductively-coupled antenna structure and at least one additional inductively-coupled an

이 특허를 인용한 특허 (74)

  1. Grimbergen, Michael; Pan, Shaoher X., Apparatus and method for monitoring processing of a substrate.
  2. Chistyakov, Roman; Abraham, Bassam Hanna, Apparatus and method for sputtering hard coatings.
  3. Grimbergen Michael ; Pan Shaoher X., Apparatus for monitoring processing of a substrate.
  4. Dhindsa, Rajinder; Lenz, Eric, Apparatus including showerhead electrode and heater for plasma processing.
  5. Dhindsa, Rajinder; Lenz, Eric, Apparatus including showerhead electrode and heater for plasma processing.
  6. Herchen, Harald, Chamber having improved gas energizer and method.
  7. Michael N. Grimbergen ; Xue-Yu Qian, Chamber having improved process monitoring window.
  8. Patrick Leahey ; Jerry C. Chen ; Richard E. Remington ; Simon Yavelberg ; Timothy Driscoll ; Robert E. Ryan ; Brian Hatcher ; Rolf Guenther ; Xueyu Qian, Closed-loop dome thermal control apparatus for a semiconductor wafer processing system.
  9. Buis,Edwin J.; Gilissen,Noud J.; Kwan,Yim Bun P.; Schapendonk,Paulus H. C. M., Cooling of voice coil motors.
  10. Buis, Edwin J.; Gilissen, Noud J.; Kwan, Yim Bun P.; Schapendonk, Paulus H.C.M., Cooling of voice coil motors in lithographic projection apparatus.
  11. Hitomi Sano JP; Masahiro Kanai JP; Atsushi Koike JP; Hiroshi Sugai JP, Deposited film forming system and process.
  12. Srivastava Aseem K., Dual plasma source for plasma process chamber.
  13. Sadjadi, S. M. Reza; Huang, Zhisong; Sam, Jose Tong; Lenz, Eric H.; Dhindsa, Rajinder, Fast gas switching plasma processing apparatus.
  14. Huang, Zhisong; Sam, Jose Tong; Lenz, Eric H.; Dhindsa, Rajinder; Sadjadi, Reza, Gas distribution system having fast gas switching capabilities.
  15. Huang, Zhisong; Sam, Jose Tong; Lenz, Eric H.; Dhindsa, Rajinder; Sadjadi, Reza, Gas distribution system having fast gas switching capabilities.
  16. Pavliscak,Thomas J.; Wedding,Carol Ann, Gas plasma antenna.
  17. Wedding, Carol Ann; Pavliscak, Thomas J.; Peters, Edwin F., Gas plasma microdischarge antenna.
  18. Chistyakov, Roman, High density plasma source.
  19. Howald Arthur M. ; Chen Anthony L. ; Schoepp Alan M., High sputter, etch resistant window for plasma processing chambers.
  20. Chistyakov, Roman, High-density plasma source.
  21. Chistyakov,Roman, High-density plasma source.
  22. Wang, Ing-Yann Albert; Kamarehi, Mohammad, Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber.
  23. Felsenthal David ; Lee Chunghsin ; Sferlazzo Piero, In-line sputter deposition system.
  24. Mehrdad M. Moslehi ; Ajit P. Paranjpe, Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system.
  25. Dunham, Scott William, Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes.
  26. Liu, Hsu-Shui; Pai, Jiun-Rong; Wang, Yeh-Chieh, Method and apparatus for wireless transmission of diagnostic information.
  27. Leutsch Wolfgang,DEX ; Rauschnabel Johannes,DEX ; Forget Jeanne ; Voigt Johannes,DEX, Method for coating a rubber wiper blade.
  28. Dunham Scott William, Method for providing uniform gas delivery to substrates in CVD and PECVD processes.
  29. Liu, Wei; Swenberg, Johanes F.; Nguyen, Hanh D.; Nguyen, Son T.; Curtis, Roger; Bottini, Philip A., Method of correcting baseline skew by a novel motorized source coil assembly.
  30. Chistyakov, Roman; Abraham, Bassam Hanna, Method of ionized physical vapor desposition sputter coating high aspect-ratio structures.
  31. Chistyakov, Roman; Abraham, Bassam Hanna, Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities.
  32. Kamarehi, Mohammad; Wang, Ing-Yann Albert, Methods for implementing highly efficient plasma traps.
  33. Kim, Jin-Joong; Kim, Kyoung-Shin, Microwave plasma lamp with rotating field.
  34. Felsenthal David ; Lee Chunghsin ; Sferlazzo Piero, Multi-layer sputter deposition apparatus.
  35. Chang, Hong-Young; Lee, Jin-Won, Plasma apparatus and substrate-processing apparatus.
  36. Chang, Hong-Young; An, Sanghyuk; Lee, Jinwon, Plasma generation apparatus.
  37. Lee, Yong-Gwan; Kim, Jae-Hyun; Lee, Sang-Won; Uhm, Sae-Hoon; Kim, Young-Rok; Lee, Kyu-Hun; Kim, Jin-Joong, Plasma generation apparatus and plasma generation method.
  38. Zhao, Jianping; Chen, Lee; Funk, Merritt; Nozawa, Toshihisa, Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques.
  39. Ebe, Akinori; Ando, Yasunori; Watanabe, Masanori, Plasma generation device and plasma processing device.
  40. Lee, Young Jong; Choi, Jun Young; Jo, Saeng Hyun; Hwang, Young-Joo; Kim, Jong-Cheon, Plasma processing apparatus.
  41. Yamazawa, Yohei, Plasma processing apparatus and plasma processing method.
  42. Hideaki Fukuda JP; Baiei Kono JP, Plasma processing apparatus for semiconductors.
  43. Masuda, Toshio; Usui, Tatehito; Suehiro, Mitsuru; Kanekiyo, Hiroshi; Yamamoto, Hideyuki; Takahashi, Kazue; Enami, Hiromichi, Plasma processing system and apparatus and a sample processing method.
  44. Masuda,Toshio; Usui,Tatehito; Suehiro,Mitsuru; Kanekiyo,Hiroshi; Yamamoto,Hideyuki; Takahashi,Kazue; Enami,Hiromichi, Plasma processing system and apparatus and a sample processing method.
  45. Singh, Vikram; Miller, Timothy J.; Lindsay, Bernard G., Plasma processing with enhanced charge neutralization and process control.
  46. Ye Yan ; D'Ambra Allan ; Mok Yeuk-Fai Edwin ; Remington Richard E. ; Sammons ; III James E., Plasma reactor with internal inductive antenna capable of generating helicon wave.
  47. Ye Yan ; D'Ambra Allan ; Mok Yeuk-Fai Edwin ; Remmington Richard E. ; Sammons ; III James E., Plasma reactor with multiple small internal inductive antennas.
  48. Pavliscak, Thomas J.; Wedding, Carol Ann, Plasma-tube antenna.
  49. Iku Shiota JP; Shoichi Abe JP, Processing method for object to be processed including a pre-coating step to seal fluorine.
  50. Gurtej S. Sandhu ; Sujit Sharan ; Anand Srinivasan, Quasi-remote plasma processing method and apparatus.
  51. Preti,Franco; Ogliari,Vincenzo; Tarenzi,Giuseppe, Reaction chamber for an epitaxial reactor.
  52. Heemstra, David; White, Kevin, Rupture resistant plasma tube.
  53. DiVergilio, William F.; Benveniste, Victor M.; Kellerman, Peter L., Segmented resonant antenna for radio frequency inductively coupled plasmas.
  54. Yamartino, John M.; Loewenhardt, Peter K.; Lubomirsky, Dmitry; Singh, Saravjeet, Shaping a plasma with a magnetic field to control etch rate uniformity.
  55. Takagi, Toshio; Sakuma, Takeshi; Kato, Yuji; Matsumoto, Kenji, Shower head structure for processing semiconductor.
  56. Kim, Changsung Sean; Hong, Jong Pa; Lee, Kyung Ho, Showerhead for chemical vapor deposition and chemical vapor deposition apparatus having the same.
  57. Bowers, Jeffrey A.; Hyde, Roderick A.; Ishikawa, Muriel Y.; Jung, Edward K. Y.; Kare, Jordin T.; Leuthardt, Eric C.; Myhrvold, Nathan P.; Nugent, Jr., Thomas J.; Tegreene, Clarence T.; Whitmer, Charles; Wood, Jr., Lowell L., Storage container including multi-layer insulation composite material having bandgap material.
  58. Klein, Martin P.; Felsenthal, David; Sferlazzo, Piero, Substrate processing pallet and related substrate processing method and machine.
  59. Klein, Martin P.; Felsenthal, David; Sferlazzo, Piero, Substrate processing pallet and related substrate processing method and machine.
  60. Klein, Martin P.; Felsenthal, David; Sferlazzo, Piero, Substrate processing pallet and related substrate processing method and machine.
  61. Kellerman,Peter L.; Benveniste,Victor M.; DiVergili,William F.; Bradley,Michael P., System and method for performing SIMOX implants using an ion shower.
  62. Papasouliotis, George D.; Hadidi, Kamal; Maynard, Helen L.; Godet, Ludovic; Singh, Vikram; Miller, Timothy J.; Lindsay, Bernard, Techniques for plasma processing a substrate.
  63. Nishimoto, Shinya, Temperature adjusting mechanism and semiconductor manufacturing apparatus using temperature adjusting mechanism.
  64. Busche, Matt; Mace, Adam; Kang, Michael; Ronne, Allan, Temperature controlled window of a plasma processing chamber component.
  65. Eckhoff, Philip A.; Gates, William; Hyde, Roderick A.; Jung, Edward K. Y.; Myhrvold, Nathan P.; Peterson, Nels R.; Tegreene, Clarence T.; Whitmer, Charles; Wood, Jr., Lowell L., Temperature-controlled storage systems.
  66. Hyde, Roderick A.; Jung, Edward K. Y.; Myhrvold, Nathan P.; Tegreene, Clarence T.; Gates, William; Whitmer, Charles; Wood, Jr., Lowell L., Temperature-stabilized medicinal storage systems.
  67. Deane, Geoffrey F.; Fowler, Lawrence Morgan; Gates, William; Guo, Zihong; Hyde, Roderick A.; Jung, Edward K. Y.; Kare, Jordin T.; Myhrvold, Nathan P.; Pegram, Nathan; Peterson, Nels R.; Tegreene, Clarence T.; Whitmer, Charles; Wood, Jr., Lowell L., Temperature-stabilized storage systems.
  68. Hyde, Roderick A.; Jung, Edward K. Y.; Myhrvold, Nathan P.; Tegreene, Clarence T.; Gates, III, William H.; Whitmer, Charles; Wood, Jr., Lowell L., Temperature-stabilized storage systems.
  69. Chou, Fong-Li; Deane, Geoffrey F.; Gates, William; Guo, Zihong; Hyde, Roderick A.; Jung, Edward K. Y.; Myhrvold, Nathan P.; Peterson, Nels R.; Tegreene, Clarence T.; Whitmer, Charles; Wood, Jr., Lowell L., Temperature-stabilized storage systems with flexible connectors.
  70. Bloedow, Jonathan; Calderon, Ryan; Friend, Michael; Gasperino, David; Gates, William; Hyde, Roderick A.; Jung, Edward K. Y.; Liu, Shieng; Myhrvold, Nathan P.; Pegram, Nathan John; Piech, David Keith; Stone, Shannon Weise; Tegreene, Clarence T.; Whitmer, Charles; Wood, Jr., Lowell L.; Yildirim, Ozgur Emek, Temperature-stabilized storage systems with integral regulated cooling.
  71. Bloedow, Jonathan; Calderon, Ryan; Gasperino, David; Gates, William; Hyde, Roderick A.; Jung, Edward K. Y.; Liu, Shieng; Myhrvold, Nathan P.; Pegram, Nathan John; Tegreene, Clarence T.; Whitmer, Charles; Wood, Jr., Lowell L.; Yildirim, Ozgur Emek, Temperature-stabilized storage systems with regulated cooling.
  72. Ding Ji ; Carducci James ; Shan Hongching ; Salimian Siamak ; Lee Evans ; Luscher Paul E. ; Welch Mike, Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion.
  73. Klein,Martin P.; Keigler,Arthur; Felsenthal,David, Ultra-thin wafer handling system.
  74. Turner, Michael, Use of inductively-coupled plasma in plasma-enhanced chemical vapor deposition reactor to improve film-to-wall adhesion following in-situ plasma clean.
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