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Apparatus for laser ion doping 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/268
  • H01L-021/428
출원번호 US-0411973 (1995-03-28)
우선권정보 JP-0237763 (1992-08-12)
발명자 / 주소
  • Zhang Hongyong,JPX
  • Yamazaki Shunpei,JPX
  • Takemura Yasuhiko,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Sixbey Friedman Leedom & FergusonFerguson, Jr.
인용정보 피인용 횟수 : 95  인용 특허 : 16

초록

The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a

대표청구항

[ What is claimed is:] [9.] An ion doping apparatus comprising:a chamber;means for introducing a gas containing dopant species into the chamber;means for producing a plasma of said gas;a substrate holder for holding a substrate in said chamber;doping means for introducing said dopant species from sa

이 특허에 인용된 특허 (16)

  1. Suda Toshikazu (Yokohama JPX), Apparatus for semiconductor process including photo-excitation process.
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  7. Levatter Jeffrey I. (Encinitas CA), Method of annealing implanted semiconductors by lasers.
  8. Yamazaki Shunpei (Tokyo JPX), Method of forming electronic devices utilizing diamond.
  9. Buchal Christoph (Jlich DEX) Sohler Wolfgang (Paderborn DEX), Method of making an optical component by ion implantation.
  10. Yamazaki Shunpei (Tokyo JPX), Method of manufacturing a semiconductor device with selective coating on lead frame.
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  15. Zhang Hongyong (Paresu Miyagami 302 1-10-15 ; Fukamidai ; Yamato-shi ; Kanagawa-ken 242 JPX) Yamazaki Shunpei (21-21 ; Kitakarasuyama ; 7-chome Setagaya-ku ; Tokyo 157 JPX), Thin-film transistor.
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