초록 ▼

A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxid

A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.

대표청구항 ▼

[ What is claimed as new and desired to be secured by letters patent of the United States is:] [17.] A pyroelectric detector comprising:a semiconducting transducer layer of amorphous oxide formed from (1) at least one member selected from the group consisting of barium, strontium, and calcium, (2) a

[ What is claimed as new and desired to be secured by letters patent of the United States is:] [17.] A pyroelectric detector comprising:a semiconducting transducer layer of amorphous oxide formed from (1) at least one member selected from the group consisting of barium, strontium, and calcium, (2) at least one member selected from the group consisting of yttrium, lanthanum, and rare earths, (3) copper, and (4) oxygen, said semiconducting transducing layer having a change in dielectric constant with change in temperature of at least 0.2 per degrees centigrade at twenty degrees centigrade; andmeans for measuring a pyroelectric current generated by changes in temperature of said transducing layer.