초록 ▼

The specification describes a process for passivating semiconductor laser structures with severe steps in the surface topography. The technique involves atomic layer deposition to produce the passivating layer which has exceptional coverage and uniformity, even in the case of trench features with tr

The specification describes a process for passivating semiconductor laser structures with severe steps in the surface topography. The technique involves atomic layer deposition to produce the passivating layer which has exceptional coverage and uniformity, even in the case of trench features with trench aspect ratios as large as 5. In addition, the passivation produced by this process has excellent environmental stability, and affords protection against air born contaminant induced degradation.

대표청구항 ▼

[ We claim:] [1.] A process for the manufacture of a semiconductor laser comprising the steps of:a. forming a layered semiconductor laser structure,b. etching said layered semiconductor structure to form a trench along a portion of the layered structure, said trench having a depth at least three tim

[ We claim:] [1.] A process for the manufacture of a semiconductor laser comprising the steps of:a. forming a layered semiconductor laser structure,b. etching said layered semiconductor structure to form a trench along a portion of the layered structure, said trench having a depth at least three times the width, andc. coating said etched semiconductor structure with a passivating coating of a passivating compound by the steps ofi. mounting the etched stacked semiconductor structure in a vacuum chamber,ii. evacuating the chamber to a pressure in the range of 1-50 mbar, heating the stacked structure to a temperature in the range 100.degree. C. to 400.degree. C.,iii. admitting at least two precursor gases into the chamber in alternate steps, said alternate steps comprising a first step of admitting a flow of a first of said precursor gases, said first of said precursor gases consisting of a source of one part of said passivating compound and a second step of admitting a flow of said second of said precursor gases, said second of said precursor gases comprising a source of an oxidizing agent to form said passivating compound, and continuing to alternate between step one and step two for at least 1000 cycles to produce the desired conformal passivating layer.