[특허]Method for forming crystal and crystal article obtained by said method

[미국특허] Method for forming crystal and crystal article obtained by said method 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C30B-025/18
출원번호	US-0471160 (1995-06-06)
우선권정보	JP-0063295 (1987-03-17)
발명자 / 주소	Yonehara Takao,JPX Naruse Yasuhiro,JPX
출원인 / 주소	Canon Kabushiki Kaisha, JPX
대리인 / 주소	Fitzpatrick, Cella, Harper & Scinto
인용정보	피인용 횟수 : 17 인용 특허 : 10

초록 ▼

A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.

대표청구항 ▼

[ We claim:] [5.] A method for forming a crystal article on a substrate, said crystal article having a crystal portion formed from a plurality of single crystals and said substrate having a plurality of nucleation surfaces and a second surface comprising:(a) vapor depositing on each of said plurality of nucleations surfaces a single nucleus for forming a single crystal, each of said nucleation surfaces (i) being amorphous, (ii) being formed of a deposited film of a material, different from the material constituting said second surface, (iii) having an area of 10 .mu.m or less in maximum diameter and (iv) having a nucleation density sufficiently larger than the nucleation density of said second surface to selectively form said single nucleus; said nucleation surfaces being spaced apart from each other by a distance; and(b) growing by vapor deposition each said single crystal from each said single nucleus on said nucleation surface such that there is one single crystal grown on each said nucleation surface, each said single crystal being formed of a material different from the deposited film material of each said nucleation surface and each said single crystal being overgrown onto said second surface.

이 특허에 인용된 특허 (10) 인용/피인용 타임라인 분석

Bradbury Donald R. (Palo Alto CA) Tsao Chi-Wing (Piedmont CA) Kamins Theodore I. (Palo Alto CA), CVD lateral epitaxial growth of silicon over insulators.
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Thompson Stephen W. (Rosenburg TX) Keen Ralph (Missouri City TX), Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure.
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Matthews ; decreased John W. (late of Ossining NY by Valerie A. Matthews ; executrix) Stobbs William M. (Cambridge GB2), Growing epitaxial films when the misfit between film and substrate is large.
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Kurogi Yukinori (Tokyo JPX) Endo Nobuhiro (Tokyo JPX) Tanno Kohetsu (Tokyo JPX), Method for manufacturing a semiconductor device.
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Kruehler Wolfgang (Unterhaching DEX) Grabmaier Josef (Berg DEX), Method for the manufacture of gallium arsenide thin film solar cells.
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Ephrath Linda M. (Danbury CT) Silvestri Victor J. (Hopewell Junction NY) Tang Denny D. (Pleasantville NY), Method of filling trenches with silicon and structures.
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Tanaka Kazunobu (Ibaraki JPX) Matsuda Akihisa (Ibaraki JPX) Yoshida Toshihiko (Tokyo JPX), Method of producing thin films of silicon.
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Leamy Harry J. (Summit NJ), Process for the growth of structures based on group IV semiconductor materials.
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Thomas Donald E. (Mt. Lebanon PA), Substrate for silicon solar cells.
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Keiser Alan E. (Colorado Springs CO) Mundt Randall S. (Colorado Springs CO), Trench filling and planarization process.
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이 특허를 인용한 특허 (17) 인용/피인용 타임라인 분석

Dauson, Douglas; Kucharczyk, Joseph; Reed, James D.; Shields, Thomas W., Apparatus and method for forming a transparent conductive oxide layer over a substrate using a laser.
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Kumomi,Hideya; Mizutani,Hidemasa; Kondo,Shigeki, Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit.
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Wang,Chia Gee; Tsu,Raphael; Lofgren,John Clay, Epitaxial SiObarrier/insulation layer.
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Thoumazet, Claire; Abbott, Fabrice; Piroux, Fabienne P., Layered element for encapsulating a senstive element.
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Nishinaga,Tatau, Method for forming a single crystalline film.
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Kramadhati V. Ravi, Method for the manufacture of semiconductor devices and circuits.
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Neng-Hui Yang TW; Ming-Sheng Yang TW; Chien-Mei Wang TW, Method of removing silicon carbide.
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Mueller, Stephan, Methods of fabricating silicon carbide crystals.
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Mueller,Stephan, Methods of fabricating silicon carbide crystals.
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Mueller,Stephan, Methods of fabricating silicon carbide crystals.
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Ravi, Kramadhati V.; Garner, Michael C., Methods of forming a high conductivity diamond film and structures formed thereby.
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Ravi,Kramadhati V.; Garner,Michael C., Methods of forming a high conductivity diamond film and structures formed thereby.
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Ravi,Kramadhati V.; Garner,Michael C., Methods of forming a high conductivity diamond film and structures formed thereby.
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Leyder, Charles; Thoumazet, Claire; Python, Martin, Multilayer component for the encapsulation of a sensitive element.
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Thoumazet, Claire; Valentin, Emmanuel; Roche, Stephanie, Protective substrate for a device that collects or emits radiation.
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Lercel, Michael J., Substrate for diamond stencil mask and method for forming.
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Ravi, Kramadhati V., Thin silicon circuits and method for making the same.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Method for forming crystal and crystal article obtained by said method 원문보기