초록 ▼

An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous

An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.

대표청구항 ▼

[ What is claimed is:] [1.] A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of:depositing a seed layer on a substrate;forming a seed layer pattern by etching said seed layer;epitaxially growing a silicon layer over

[ What is claimed is:] [1.] A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of:depositing a seed layer on a substrate;forming a seed layer pattern by etching said seed layer;epitaxially growing a silicon layer over said seed layer pattern and over portions of said substrate;implanting ions in said silicon layer to obtain an ion implanted silicon layer; andannealing said ion implanted silicon layer to obtain said active region of said thin film transistor liquid crystal display, rein said step of forming said seed layer pattern forms said seed layer pattern in a position that corresponds to a location between source and drain electrodes in said active region of said thin film transistor liquid crystal display.