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Process for the production of a structure having a thin semiconductor film on a substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-025/00
출원번호 US-0529927 (1995-09-18)
우선권정보 FR-0011311 (1994-09-22)
발명자 / 주소
  • Bruel Michel,FRX
  • Poumeyrol Thierry,FRX
출원인 / 주소
  • Commissariat a l'Energie Atomique, FRX
대리인 / 주소
    Cesari and McKenna, LLP
인용정보 피인용 횟수 : 110  인용 특허 : 4

초록

A process for the production of a structure having a thin semiconductor film (2) adhering to a target substrate (24). The process which is applicable to the production of electronic components comprises the steps of

대표청구항

[ We claim:] [1.] A process for the production of a structure having a semiconductor thin film (4) adhering to a target substrate (24), comprising the following steps:a) producing a first structure having a thin semiconductor film on a first substrate (2) to form a thin film-first substrate assembly

이 특허에 인용된 특허 (4)

  1. Sarma Kalluri R. (Mesa AZ), Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display.
  2. Konishi Junichi (Ikeda JPX) Maari Kouichi (Ikeda JPX) Taneda Toshihiko (Minoo JPX) Kishimoto Akiko (Kawanishi JPX), Method for producing semiconductor film.
  3. Kirkpatrick Allen R. (Lowell MA), Process for fabricating thin film and glass sheet laminate.
  4. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.

이 특허를 인용한 특허 (110)

  1. Kalluri R. Sarma ; Charles S. Chanley, Back illuminated imager with enhanced UV to near IR sensitivity.
  2. Currie,Matthew T., Control of strain in device layers by prevention of relaxation.
  3. Currie,Matthew T., Control of strain in device layers by selective relaxation.
  4. Henley,Francois J.; Cheung,Nathan W., Controlled cleaving process.
  5. Henley,Francois J.; Cheung,Nathan W., Controlled cleaving process.
  6. Henley, Francois J.; Cheung, Nathan, Controlled process and resulting device.
  7. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
  8. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
  9. Henley, Francois J.; Cheung, Nathan W., Controlled process and resulting device.
  10. Henley,Francois J.; Cheung,Nathan W., Controlled process and resulting device.
  11. Aspar,Bernard; Lagahe,Chrystelle; Rayssac,Olivier; Ghyselen,Bruno, Embrittled substrate and method for making same.
  12. Wu,Kenneth C.; Fitzgerald,Eugene A.; Taraschi,Gianni; Borenstein,Jeffrey T., Etch stop layer system.
  13. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Fabrication process for a semiconductor substrate.
  14. Kiyofumi Sakaguchi JP; Takao Yonehara JP, Fabrication process of semiconductor substrate.
  15. Currie, Matthew T., Hybrid fin field-effect transistor structures and related methods.
  16. Joly, Jean-Pierre; Ulmer, Laurent; Parat, Guy, Integrated circuit on high performance chip.
  17. Bressot,S챕verine; Rayssac,Olivier; Aspar,Bernard, Layer transfer method.
  18. Henley, Francois J., Layer transfer of films utilizing controlled propagation.
  19. Henley, Francois J., Layer transfer of films utilizing controlled shear region.
  20. Moriceau, Hubert; Aspar, Bernard; Jalaguier, Eric; Letertre, Fabrice, Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate.
  21. Moriceau, Hubert; Aspar, Bernard; Jalaguier, Eric; Letertre, Fabrice, Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate.
  22. Sakaguchi, Kiyofumi; Yonehara, Takao; Omi, Kazuaki; Yanagita, Kazutaka; Miyakogawa, Toshikazu, Member separating apparatus and processing apparatus.
  23. Nobuhiko Sato JP, Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same.
  24. Kazuaki Ohmi JP; Takao Yonehara JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Method and apparatus for separating composite member using fluid.
  25. Kazuaki Ohmi JP; Takao Yonehara JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Method and apparatus for separating composite member using fluid.
  26. Ohmi, Kazuaki; Yonehara, Takao; Sakaguchi, Kiyofumi; Yanagita, Kazutaka, Method and apparatus for separating composite member using fluid.
  27. Yanagita, Kazutaka; Sakaguchi, Kiyofumi, Method and apparatus for separating sample.
  28. Yanagita,Kazutaka; Sakaguchi,Kiyofumi, Method and apparatus for separating sample.
  29. Henley,Francois J.; Cheung,Nathan, Method and device for controlled cleaving process.
  30. Bruel, Michel, Method and device for fabricating a layer in semiconductor material.
  31. Henley, Francois J., Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process.
  32. Henley, Francois J., Method and structure for fabricating solar cells using a thick layer transfer process.
  33. Cheung, Nathan W.; En, William G.; Farrens, Sharon N.; Korolik, Mikhail, Method for fabricating multi-layered substrates.
  34. Fournel, Franck; Moriceau, Hubert; Lagahe, Christelle, Method for making a stressed structure designed to be dissociated.
  35. Bernard Aspar FR; Michel Bruel FR; Thierry Barge FR, Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element.
  36. Deguet, Chrystel; Clavelier, Laurent, Method for making a thin-film element.
  37. Akiyama, Shoji; Kubota, Yoshihiro; Ito, Atsuo; Kawai, Makoto; Tobisaka, Yuuji; Tanaka, Koichi, Method for manufacturing SOI substrate.
  38. Tauzin, Aurélie; Dechamp, Jérôme; Mazen, Frédéric; Madeira, Florence, Method for preparing thin GaN layers by implantation and recycling of a starting substrate.
  39. Bernard Aspar FR; Michel Bruel FR; Claude Jaussaud FR; Chrystelle Lagahe FR, Method for producing a thin membrane and resulting structure with membrane.
  40. Nguyen, Nguyet-Phuong; Cayrefourcq, Ian; Lagahe-Blanchard, Christelle; Bourdelle, Konstantin; Tauzin, Aurélie; Fournel, Franck, Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation.
  41. Brüderl, Georg; Eichler, Christoph; Strauss, Uwe, Method of fabricating a quasi-substrate wafer and semiconductor body fabricated using such a quasi-substrate wafer.
  42. Wilson Syd R. ; Weitzel Charles E. ; Bhatnagar Mohit ; Moore Karen E. ; Wetteroth Thomas A., Method of fabricating a semiconductor device with a thinned substrate.
  43. Cheng,Zhiyuan; Fitzgerald,Eugene A.; Antoniadis,Dimitri A., Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers.
  44. Yeo, Yee-Chia; Lee, Wen-Chin, Method of forming strained silicon on insulator substrate.
  45. Torvik,John Targe, Method of making a hybrid substrate having a thin silicon carbide membrane layer.
  46. Torvik, John Tarje, Method of making a hybride substrate having a thin silicon carbide membrane layer.
  47. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.
  48. Aspar, Bernard; Bruel, Michel; Poumeyrol, Thierry, Method of producing a thin layer of semiconductor material.
  49. Aspar, Bernard; Bruel, Michel; Poumeyrol, Thierry, Method of producing a thin layer of semiconductor material.
  50. Aspar,Bernard; Bruel,Michel; Poumeyrol,Thierry, Method of producing a thin layer of semiconductor material.
  51. Aspar,Bernard; Bruel,Michel; Poumeyrol,Thierry, Method of producing a thin layer of semiconductor material.
  52. Yamagata, Kenji, Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device.
  53. Ben Mohamed, Nadia; Kerdiles, Sébastien, Method of splitting a substrate.
  54. Deguet, Chrystel; Clavelier, Laurent; Dechamp, Jerome, Method of transferring a thin film onto a support.
  55. Fournel, Franck, Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer.
  56. Fitzgerald,Eugene; Currie,Matthew, Methods for fabricating strained layers on semiconductor substrates.
  57. Langdo, Thomas A.; Currie, Matthew T.; Hammond, Richard; Lochtefeld, Anthony J.; Fitzgerald, Eugene A., Methods for forming III-V semiconductor device structures.
  58. Letertre,Fabrice; Rayssac,Olivier, Methods for forming an assembly for transfer of a useful layer.
  59. Letertre,Fabrice; Rayssac,Olivier, Methods for forming an assembly for transfer of a useful layer.
  60. Letertre, Fabrice; Rayssac, Olivier, Methods for forming an assembly for transfer of a useful layer using a peripheral recess area to facilitate transfer.
  61. Langdo, Thomas A.; Currie, Matthew T.; Hammond, Richard; Lochtefeld, Anthony J.; Fitzgerald, Eugene A., Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain.
  62. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes.
  63. Currie,Matthew T., Methods of forming hybrid fin field-effect transistor structures.
  64. Langdo, Thomas A.; Currie, Matthew T.; Hammond, Richard; Lochtefeld, Anthony J.; Fitzgerald, Eugene A., Methods of forming strained-semiconductor-on-insulator device structures.
  65. Lochtefeld,Anthony J.; Langdo,Thomas A.; Hammond,Richard; Currie,Matthew T.; Braithwaite,Glyn; Fitzgerald,Eugene A., Methods of forming strained-semiconductor-on-insulator finFET device structures.
  66. Martinez, Muriel; Boussagol, Alice, Methods of producing a heterogeneous semiconductor structure.
  67. Sadaka, Mariam; Radu, Ionut, Methods of providing thin layers of crystalline semiconductor material, and related structures and devices.
  68. Kazuaki Omi JP; Takao Yonehara JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Object separating apparatus and method, and method of manufacturing semiconductor substrate.
  69. Alexander Y Usenko ; William N. Carr, Process for lift off and transfer of semiconductor devices onto an alien substrate.
  70. Cheng, Zhi-Yuan; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; Hoyt, Judy L., Process for producing semiconductor article using graded epitaxial growth.
  71. Sakaguchi,Kiyofumi; Yonehara,Takao, Process for production of semiconductor substrate.
  72. Bruel Michel,FRX ; Di Cioccio Lea,FRX, Process for the separation of at least two elements of a structure in contact with one another by ion implantation.
  73. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Process for the transfer of a thin film.
  74. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Process for the transfer of a thin film comprising an inclusion creation step.
  75. Bruel Michel,FRX, Producing microstructures or nanostructures on a support.
  76. Henley, Francois J.; Brailove, Adam, Race track configuration and method for wafering silicon solar substrates.
  77. Ito, Masataka, SOI annealing method.
  78. Ito, Masataka, SOI annealing method and SOI manufacturing method.
  79. Yeo, Yee-Chia; Chen, Hao-Yu; Tsao, Hsun-Chih; Yang, Fu-Liang; Hu, Chenming, SOI chip with mesa isolation and recess resistant regions.
  80. Yeo, Yee-Chia; Chen, Hao-Yu; Tsao, Hsun-Chih; Yang, Fu-Liang; Hu, Chenming, SOI chip with mesa isolation and recess resistant regions.
  81. Yeo, Yee-Chia; Hu, Chenming, SOI chip with recess-resistant buried insulator and method of manufacturing the same.
  82. Yeo,Yee Chia; Hu,Chenming, SOI chip with recess-resistant buried insulator and method of manufacturing the same.
  83. Aga,Hiroji; Takahashi,Hiroyuki; Mitani,Kiyoshi, SOI wafer producing method, and wafer separating jig.
  84. Kazutaka Yanagita JP; Takao Yonehara JP; Kazuaki Omi JP; Kiyofumi Sakaguchi JP, Sample separating apparatus and method, and substrate manufacturing method.
  85. Yanagita, Kazutaka; Yonehara, Takao; Omi, Kazuaki; Sakaguchi, Kiyofumi, Sample separating apparatus and method, and substrate manufacturing method.
  86. Yanagita, Kazutaka; Yonehara, Takao; Omi, Kazuaki; Sakaguchi, Kiyofumi, Sample separating apparatus and method, and substrate manufacturing method.
  87. Cheng, Zhiyuan; Fitzgerald, Eugene A.; Antoniadis, Dimitri A., Semiconductor device structure.
  88. Yamauchi, Shoichi; Ohshima, Hisayoshi; Matsui, Masaki; Onoda, Kunihiro; Ooka, Tadao; Yamanaka, Akitoshi; Izumi, Toshifumi, Semiconductor substrate and method of manufacturing the same.
  89. Miyabayashi, Hiroshi; Sato, Nobuhiko; Ito, Masataka, Semiconductor-on-insulator annealing method.
  90. Yeo, Yee-Chia; Yang, Fu-Liang, Silicon-on-insulator chip with multiple crystal orientations.
  91. Yeo, Yee-Chia; Yang, Fu-Liang, Silicon-on-insulator chip with multiple crystal orientations.
  92. Yeo,Yee Chia; Yang,Fu Liang, Silicon-on-insulator chip with multiple crystal orientations.
  93. Ito, Masataka, Soi annealing method for reducing HF defects, with lamp, without crystal original particle (COP).
  94. Moriceau, Hubert; Aspar, Bernard; Margail, Jacques, Stacked structure and production method thereof.
  95. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained germanium-on-insulator device structures.
  96. Ge, Chung-Hu; Lee, Wen-Chin; Hu, Chenming, Strained silicon structure.
  97. Ge,Chung Hu; Lee,Wen Chin; Hu,Chenming, Strained silicon structure.
  98. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator device structures.
  99. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator device structures.
  100. Langdo,Thomas A.; Currie,Matthew T.; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator device structures with elevated source/drain regions.
  101. Langdo,Thomas A.; Currie,Matthew T.; Braithwaite,Glyn; Hammond,Richard; Lochtefeld,Anthony J.; Fitzgerald,Eugene A., Strained-semiconductor-on-insulator finFET device structures.
  102. Sakaguchi, Kiyofumi; Sato, Nobuhiko, Substrate and production method thereof.
  103. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
  104. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
  105. Henley, Francois; Lamm, Al; Chow, Yi-Lei, Substrate cleaving under controlled stress conditions.
  106. Rayssac, Olivier; Letertre, Fabrice, Substrate cutting device and method.
  107. Brailove, Adam; Liu, Zuqin; Henley, Francois J.; Lamm, Albert J., Techniques for forming thin films by implantation with reduced channeling.
  108. Danovitch, David; Sylvestre, Julien, Temporary structure to reduce stress and warpage in a flip chip organic package.
  109. Danovitch,David; Sylvestre,Julien, Temporary structure to reduce stress and warpage in a flip chip organic package.
  110. Iwane, Masaaki; Yonehara, Takao, Thin film formation process by clearing the implanted layer with laser radiation.
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