초록 ▼

Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit

Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

대표청구항 ▼

[ What is claimed is:] [1.] Method of pre-fabricating contact tip structures for joining to ends of elongate interconnection elements, comprising:depositing at least one layer of at least one conductive material on a surface of a silicon wafer;depositing a layer of masking material atop the at least

[ What is claimed is:] [1.] Method of pre-fabricating contact tip structures for joining to ends of elongate interconnection elements, comprising:depositing at least one layer of at least one conductive material on a surface of a silicon wafer;depositing a layer of masking material atop the at least one conductive layer;patterning openings in the masking material;depositing at least one layer of at least one conductive material into the openings; andremoving the masking material.