$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Low temperature method of preparing GaN single crystals 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-029/38
출원번호 US-0006431 (1998-01-13)
발명자 / 주소
  • DiSalvo Francis J.
  • Yamane Hisanori,JPX
  • Molstad Jay
출원인 / 주소
  • Cornell Research Foundation, Inc.
인용정보 피인용 횟수 : 139  인용 특허 : 5

초록 ▼

A low temperature method for preparing GaN single crystals for use, for example, for blue light emitting diodes and laser diodes, comprises using sodium as a flux in a reaction system containing only gallium, sodium and nitrogen, e.g., by thermally decomposing sodium azide in a closed reaction zone

대표청구항

[ What is claimed is:] [1.] A method for preparing GaN single crystals which comprises reacting gallium and nitrogen in a sodium flux in a reaction system containing only gallium, sodium, and nitrogen, optionally in the presence of a catalytic amount of an alkaline earth metal.

이 특허에 인용된 특허 (5)

  1. Nakamura Shuji (Anan JPX), Crystal growth method for gallium nitride-based compound semiconductor.
    상세보기
  2. Vernon Stanley M. (Wellesley MA), Epitaxial compositions.
    상세보기
  3. Carter ; Jr. Calvin H. (Raleigh NC), High efficiency light emitting diodes from bipolar gallium nitride.
    상세보기
  4. Jones Richard A. (Austin TX) Cowley Alan H. (Austin TX) Ekerdt John G. (Austin TX), Mononuclear and multinuclear phosphido, arsenido, and stibido complexes of aluminum, gallium and indium.
    상세보기
  5. Nishizawa Junichi (Sendai JPX) Abe Hitoshi (Sendai JPX), Process for growing GaAs monocrystal film.
    상세보기

이 특허를 인용한 특허 (139)

  1. Schujman, Sandra B.; Rao, Shailaja P.; Bondokov, Robert T.; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them.
    상세보기
  2. Schujman, Sandra B.; Rao, Shailaja P.; Bondokov, Robert T.; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them.
    상세보기
  3. D'Evelyn, Mark P., Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride.
    상세보기
  4. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek P.; Kanbara,Yasuo, Apparatus for obtaining a bulk single crystal using supercritical ammonia.
    상세보기
  5. D'Evelyn, Mark Philip; Giddings, Robert Arthur; Sharifi, Fred; Dey, Subhrajit; Hong, Huicong; Kapp, Joseph Alexander; Khare, Ashok Kumar, Apparatus for processing materials in supercritical fluids and methods thereof.
    상세보기
  6. D'Evelyn,Mark Philip; Park,Dong Sil; Lou,Victor Lienkong; McNulty,Thomas Francis; Hong,Huicong, Apparatus for producing single crystal and quasi-single crystal, and associated method.
    상세보기
  7. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo; Kucharski, Robert, Bulk mono-crystalline gallium-containing nitride and its application.
    상세보기
  8. Dwilinski, Robert Tomasz; Doradzinski, Roman Marek; Garczynski, Jerzy; Sierzputowski, Leszek Piotr; Kanbara, Yasuo, Bulk monocrystalline gallium nitride.
    상세보기
  9. Dwiliński, Robert Tomasz; Doradziński, Roman Marek; Garczyński, Jerzy; Sierzputowski, Leszek Piotr; Kanbara, Yasuo, Bulk monocrystalline gallium nitride.
    상세보기
  10. Dwiliński,Robert; Doradziński,Roman; Garczyński,Jerzy; Sierzputowski,Leszek P.; Kanbara,Yasuo, Bulk nitride mono-crystal including substrate for epitaxy.
    상세보기
  11. Dwiliński,Robert; Doradziński,Roman; Garczynski,Jerzy; Sierzputowski,Leszek P.; Kanbara,Yasuo, Bulk nitride mono-crystal including substrate for epitaxy.
    상세보기
  12. Sarayama, Seiji; Yamane, Hisanori; Shimada, Masahiko; Kumano, Masafumi; Iwata, Hirokazu; Araki, Takashi, Crystal growth apparatus.
    상세보기
  13. Sarayama, Seiji; Iwata, Hirokazu; Fuse, Akihiro, Crystal growth apparatus and manufacturing method of group III nitride crystal.
    상세보기
  14. Sarayama, Seiji; Iwata, Hirokazu; Fuse, Akihiro, Crystal growth apparatus and manufacturing method of group III nitride crystal.
    상세보기
  15. Sarayama, Seiji; Iwata, Hirokazu; Fuse, Akihiro, Crystal growth apparatus and manufacturing method of group III nitride crystal.
    상세보기
  16. Sarayama,Seiji; Iwata,Hirokazu; Fuse,Akihiro; Ara,Kuniaki; Saito,Junichi, Crystal growth apparatus and method of producing a crystal.
    상세보기
  17. Sarayama, Seiji; Yamane, Hisanori; Shimada, Masahiko; Kumano, Masafumi; Iwata, Hirokazu; Araki, Takashi, Crystal growth method.
    상세보기
  18. Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori; Aoki, Masato, Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device.
    상세보기
  19. Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori; Aoki, Masato, Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device.
    상세보기
  20. Sarayama,Seiji; Yamane,Hisanori; Shimada,Masahiko; Kumano,Masafumi; Iwata,Hirokazu; Araki,Takashi, Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device.
    상세보기
  21. Sarayama, Seiji; Iwata, Hirokazu, Crystal manufacturing apparatus.
    상세보기
  22. Sarayama, Seiji; Iwata, Hirokazu, Crystal manufacturing apparatus.
    상세보기
  23. Iwata, Hirokazu; Sarayama, Seiji; Fuse, Akihiro, Crystal preparing device, crystal preparing method, and crystal.
    상세보기
  24. Slack, Glen A.; Schujman, Sandra B., Deep-eutectic melt growth of nitride crystals.
    상세보기
  25. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  26. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  27. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Stack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  28. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  29. Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A.; Rao, Shailaja P.; Gibb, Shawn Robert, Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  30. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
    상세보기
  31. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
    상세보기
  32. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
    상세보기
  33. Xu,Xueping, GaN boule grown from liquid melt using GaN seed wafers.
    상세보기
  34. Iwai, Makoto; Imai, Katsuhiro; Imaeda, Minoru, Gallium nitride single crystal growing method and gallium nitride single crystal.
    상세보기
  35. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William, Gallium-nitride-on-handle substrate materials and devices and method of manufacture.
    상세보기
  36. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William D., Gallium—nitride-on-handle substrate materials and devices and method of manufacture.
    상세보기
  37. Hanser, Andrew D.; Liu, Lianghong; Preble, Edward; Tsvetkov, Denis; Williams, N. Mark; Xu, Xueping, Group III nitride articles and methods for making same.
    상세보기
  38. Hanser, Andrew D.; Liu, Lianghong; Preble, Edward; Tsvetkov, Denis; Williams, N. Mark; Xu, Xueping, Group III nitride articles having nucleation layers, transitional layers, and bulk layers.
    상세보기
  39. Hashimoto, Tadao; Letts, Edward, Group III nitride bulk crystals and their fabrication method.
    상세보기
  40. Hashimoto, Tadao; Letts, Edward, Group III nitride bulk crystals and their fabrication method.
    상세보기
  41. Iwata, Hirokazu; Sarayama, Seiji; Fuse, Akihiro, Group III nitride crystal and manufacturing method thereof.
    상세보기
  42. Iwata, Hirokazu; Sarayama, Seiji; Fuse, Akihiro, Group III nitride crystal and manufacturing method thereof.
    상세보기
  43. Kitaoka,Yasuo; Minemoto,Hisashi; Kidoguchi,Isao; Sasaki,Takatomo; Mori,Yusuke; Kawamura,Fumio; Morishita,Masanori, Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same.
    상세보기
  44. Kitaoka,Yasuo; Minemoto,Hisashi; Kidoguchi,Isao; Tsukamoto,Kazuyoshi, Group-III-element nitride crystal semiconductor device.
    상세보기
  45. Bondokov, Robert T.; Rao, Shailaja P.; Gibb, Shawn R.; Schowalter, Leo J., Growth of large aluminum nitride single crystals with thermal-gradient control.
    상세보기
  46. Bondokov, Robert T.; Rao, Shailaja P.; Gibb, Shawn Robert; Schowalter, Leo J., Growth of large aluminum nitride single crystals with thermal-gradient control.
    상세보기
  47. Schmidt, Mathew; D'Evelyn, Mark P., High indium containing InGaN substrates for long wavelength optical devices.
    상세보기
  48. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
    상세보기
  49. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
    상세보기
  50. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
    상세보기
  51. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
    상세보기
  52. Pakalapati, Rajeev T.; D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
    상세보기
  53. D'Evelyn, Mark P.; Kapp, Joseph A.; Lawrenson, John C., High pressure apparatus with stackable rings.
    상세보기
  54. D'Evelyn,Mark Philip; Webb,Steven William; Vagarali,Suresh Shankarappa; Kadioglu,Yavuz; Park,Dong Sil; Chen,Zheng, High pressure high temperature growth of crystalline group III metal nitrides.
    상세보기
  55. D'Evelyn, Mark Philip; Narang, Kristi Jean; Giddings, Robert Arthur; Tysoe, Steven Alfred; Lucek, John William; Vagarali, Suresh Shankarappa; Leonelli, Jr., Robert Vincent; Dysart, Joel Rice, High temperature high pressure capsule for processing materials in supercritical fluids.
    상세보기
  56. Hirota, Ryu; Uematsu, Koji; Kawase, Tomohiro, III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device.
    상세보기
  57. Preble, Edward A.; Tsvetkov, Denis; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same.
    상세보기
  58. Preble, Edward A.; Tsvetkov, Denis; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same.
    상세보기
  59. Bondokov, Robert T.; Morgan, Kenneth; Slack, Glen A.; Schowalter, Leo J., Large aluminum nitride crystals with reduced defects and methods of making them.
    상세보기
  60. Bondokov, Robert; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Large aluminum nitride crystals with reduced defects and methods of making them.
    상세보기
  61. D'Evelyn, Mark P.; Speck, James S.; Kamber, Derrick S.; Pocius, Douglas W., Large area nitride crystal and method for making it.
    상세보기
  62. Chang, Chun-Yen; Yang, Tsung Hsi, Light emitter device.
    상세보기
  63. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Light emitting element structure using nitride bulk single crystal layer.
    상세보기
  64. Cuomo, Jerome J.; Williams, N. Mark; Hanser, Andrew David; Carlson, Eric Porter; Thomas, Darin Taze, MIIIN based materials and methods and apparatus for producing same.
    상세보기
  65. Iwai, Makoto; Shimodaira, Takanao; Yamamura, Yoshihiko; Sasaki, Takatomo; Mori, Yusuke; Kawamura, Fumio; Yamasaki, Shiro, Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal.
    상세보기
  66. Imaeda, Minoru; Kondo, Yoshimasa; Okazaki, Ichiro, Method and apparatus for manufacturing group III nitride crystals.
    상세보기
  67. Cuomo, Jerome J.; Williams, N. Mark; Hanser, Andrew David; Carlson, Eric Porter; Thomas, Darin Taze, Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon.
    상세보기
  68. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos, Method and apparatus for producing large, single-crystals of aluminum nitride.
    상세보기
  69. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos, Method and apparatus for producing large, single-crystals of aluminum nitride.
    상세보기
  70. Schowalter, Leo; Slack, Glen A.; Rojo, Juan Carlos; Bondokov, Robert T.; Morgan, Kenneth E.; Smart, Joseph A., Method and apparatus for producing large, single-crystals of aluminum nitride.
    상세보기
  71. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek; Kanbara,Yasuo, Method and equipment for manufacturing aluminum nitride bulk single crystal.
    상세보기
  72. Kobayashi, Nobuyuki; Maeda, Kazuki; Kondo, Koichi; Nanataki, Tsutomu; Imai, Katsuhiro; Yoshikawa, Jun, Method for forming a single crystal by spraying the raw material onto a seed substrate.
    상세보기
  73. D'Evelyn, Mark P.; Poblenz, Christiane; Krames, Michael R., Method for growth of indium-containing nitride films.
    상세보기
  74. Hanser, Andrew D.; Liu, Lianghong; Preble, Edward A.; Tsvetkov, Denis; Williams, Nathaniel Mark; Xu, Xueping, Method for making group III nitride articles.
    상세보기
  75. Sasaki,Takatomo; Mori,Yusuke; Yoshimura,Masashi; Kawamura,Fumio; Omae,Kunimichi; Iwahashi,Tomoya; Morishita,Masanori, Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby.
    상세보기
  76. D'Evelyn, Mark P.; Speck, James S., Method for synthesis of high quality large area bulk gallium based crystals.
    상세보기
  77. Shibata Masatomo,JPX ; Furuya Takashi,JPX, Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method.
    상세보기
  78. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek; Kanbara,Yasuo, Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate.
    상세보기
  79. Krames, Mike; D'Evelyn, Mark; Pakalapati, Rajeev; Alexander, Alex; Kamber, Derrick, Method of making bulk InGaN substrates and devices thereon.
    상세보기
  80. Kitaoka,Yasuo; Minemoto,Hisashi; Kidoguchi,Isao; Sasaki,Takatomo; Mori,Yusuke; Kawamura,Fumio; Morishita,Masanori, Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same.
    상세보기
  81. Kitaoka,Yasuo; Minemoto,Hisashi; Kidoguchi,Isao; Sasaki,Takatomo; Mori,Yusuke; Kawamura,Fumio, Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device.
    상세보기
  82. Kitaoka,Yasuo; Minemoto,Hisashi; Kidoguchi,Isao; Ishibashi,Akihiko; Sasaki,Takatomo; Mori,Yusuke; Kawamura,Fumio, Method of manufacturing Group III nitride substrate and semiconductor device.
    상세보기
  83. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek; Kanbara,Yasuo, Method of manufacturing bulk single crystal of gallium nitride.
    상세보기
  84. Kitaoka, Yasuo; Minemoto, Hisashi; Kidoguchi, Isao; Ishibashi, Akihiko, Method of manufacturing group III nitride substrate.
    상세보기
  85. Kitaoka,Yasuo; Minemoto,Hisashi; Kidoguchi,Isao; Ishibashi,Akihiko, Method of manufacturing group III nitride substrate and semiconductor device.
    상세보기
  86. Sasaki,Takatomo; Mori,Yusuke; Yoshimura,Masashi; Kawamura,Fumio; Hirota,Ryu, Method of manufacturing group-III nitride crystal.
    상세보기
  87. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Method of preparing light emitting device.
    상세보기
  88. Sarayama, Seiji; Iwata, Hirokazu; Fuse, Akihiro, Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal.
    상세보기
  89. Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Methods for controllable doping of aluminum nitride bulk crystals.
    상세보기
  90. D'Evelyn, Mark P.; Sharma, Rajat, Microcavity light emitting diode method of manufacture.
    상세보기
  91. D'Evelyn, Mark P., Nitride crystal with removable surface layer and methods of manufacture.
    상세보기
  92. D'Evelyn, Mark P., Nitride crystal with removable surface layer and methods of manufacture.
    상세보기
  93. Nakamura, Shuji; Mukai, Takashi; Tanizawa, Koji; Mitani, Tomotsugu; Marui, Hiroshi, Nitride semiconductor device.
    상세보기
  94. Nakamura,Shuji; Mukai,Takashi; Tanizawa,Koji; Mitani,Tomotsugu; Marui,Hiroshi, Nitride semiconductor device.
    상세보기
  95. Nagahama, Shinichi; Nakamura, Shuji, Nitride semiconductor device and manufacturing method thereof.
    상세보기
  96. Nagahama,Shinichi; Nakamura,Shuji, Nitride semiconductor device and manufacturing method thereof.
    상세보기
  97. Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen; Morgan, Kenneth E.; Bondokov, Robert T.; Bettles, Timothy J.; Slack, Glen A., Nitride semiconductor heterostructures and related methods.
    상세보기
  98. Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen; Morgan, Kenneth E.; Bondokov, Robert T.; Bettles, Timothy J.; Slack, Glen A., Nitride semiconductor heterostructures and related methods.
    상세보기
  99. Kozaki, Tokuya; Sano, Masahiko; Nakamura, Shuji; Nagahama, Shinichi, Nitride semiconductor laser device.
    상세보기
  100. Kozaki,Tokuya; Sano,Masahiko; Nakamura,Shuji; Nagahama,Shinichi, Nitride semiconductor laser device.
    상세보기
  101. Kozaki,Tokuya; Sano,Masahiko; Nakamura,Shuji; Nagahama,Shinichi, Nitride semiconductor laser device.
    상세보기
  102. Dwilinski,Robert; Doradzinski,Roman; Garczynski,Jerzy; Sierzputowski,Leszek; Kanbara,Yasuo, Nitride semiconductor laser device and manufacturing method thereof.
    상세보기
  103. Cuomo, Jerome J.; Williams, N. Mark, Non-thermionic sputter material transport device, methods of use, and materials produced thereby.
    상세보기
  104. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same.
    상세보기
  105. Schowalter, Leo J.; Chen, Jianfeng; Grandusky, James R., Photon extraction from nitride ultraviolet light-emitting devices.
    상세보기
  106. Schowalter, Leo J.; Chen, Jianfeng; Grandusky, James R., Photon extraction from nitride ultraviolet light-emitting devices.
    상세보기
  107. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M., Photonic-crystal light emitting diode and method of manufacture.
    상세보기
  108. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M.; Feezell, Daniel F., Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors.
    상세보기
  109. D'Evelyn, Mark P., Polycrystalline group III metal nitride with getter and method of making.
    상세보기
  110. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
    상세보기
  111. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
    상세보기
  112. D'Evelyn, Mark P., Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer.
    상세보기
  113. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
    상세보기
  114. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
    상세보기
  115. Dwiliński,Robert Tomasz; Doradziński,Roman Marek; Garczyński,Jerzy; Sierzputowski,Leszek Piotr; Kanbara,Yasuo, Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride.
    상세보기
  116. Dwilinski,Robert Tomasz; Doradzinski,Roman Marek; Sierzfutowski,Leszek Piotr; Garczynski,Jerzy; Kanbara,Yasuo, Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride.
    상세보기
  117. D'Evelyn, Mark P., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
    상세보기
  118. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
    상세보기
  119. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Process for obtaining bulk mono-crystalline gallium-containing nitride.
    상세보기
  120. Hatakeyama, Takeshi; Minemoto, Hisashi; Hiranaka, Kouichi; Yamada, Osamu, Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal.
    상세보기
  121. Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori; Iwata, Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate.
    상세보기
  122. Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori; Iwata, Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate.
    상세보기
  123. Sarayama,Seiji; Shimada,Masahiko; Yamane,Hisanori; Iwata,Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate.
    상세보기
  124. Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori; Iwata, Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed thereon.
    상세보기
  125. Sarayama,Seiji; Shimada,Masahiko; Yamane,Hisanori; Iwata,Hirokazu, Production of a GaN bulk crystal substrate and a semiconductor device formed thereon.
    상세보기
  126. Grandusky, James R.; Schowalter, Leo J.; Jamil, Muhammad; Mendrick, Mark C.; Gibb, Shawn R., Pseudomorphic electronic and optoelectronic devices having planar contacts.
    상세보기
  127. Hashimoto, Tadao; Letts, Edward; Key, Daryl, Seed selection and growth methods for reduced-crack group III nitride bulk crystals.
    상세보기
  128. D'Evelyn, Mark P., Semi-insulating group III metal nitride and method of manufacture.
    상세보기
  129. Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  130. Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  131. Preble, Edward; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  132. Preble, Edward; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
    상세보기
  133. Sharma, Rajat; Hall, Eric M.; Poblenz, Christiane; D'Evelyn, Mark P., Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods.
    상세보기
  134. Dwilinski, Robert; Doradzinski, Roman; Garczynski, Jerzy; Sierzputowski, Leszek; Kanbara, Yasuo, Substrate for epitaxy and method of preparing the same.
    상세보기
  135. Schowalter, Leo J.; Smart, Joseph A.; Grandusky, James R.; Liu, Shiwen, Thick pseudomorphic nitride epitaxial layers.
    상세보기
  136. Jiang, Wenkan; Ehrentraut, Dirk; D'Evelyn, Mark P., Transparent group III metal nitride and method of manufacture.
    상세보기
  137. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
    상세보기
  138. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
    상세보기
  139. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
    상세보기

관련 콘텐츠

섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로