초록 ▼

A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has bee

A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

대표청구항 ▼

[ What is claimed is:] [1.] A gallium nitride-based III-V Group compound semiconductor comprising:a substrate having a substantially square surface shape, said substrate having first and second major surfaces;a semiconductor stacked layer structure arranged over said first major surface of the subst

[ What is claimed is:] [1.] A gallium nitride-based III-V Group compound semiconductor comprising:a substrate having a substantially square surface shape, said substrate having first and second major surfaces;a semiconductor stacked layer structure arranged over said first major surface of the substrate, and comprising n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor provided over said n-type semiconductor layer, said p-type semiconductor layer having a cut-off portion partially exposing a surface of said n-type semiconductor layer;a first electrode structure provided on the exposed surface of said n-type semiconductor layer;a second electrode structure provided in electrical contact with said p-type semiconductor layer, and arranged on the same side of the substrate as said first electrode structure, said second electrode structure comprising an electrode layer having a light-transmitting property and provided on a substantially entire surface of said p-type semiconductor layer, and a bonding pad provided on said electrode layer; anda continuous insulating protective film covering a portion of the upper surface of said bonding pad, a substantially entire upper surface of said electrode layer as well as a portion of the exposed surface of said n-type semiconductor layer.