초록 ▼

A memory system capable of being configured for optimum operation after fabrication and method of controlling same. The system includes an array of memory cells arranged in a multiplicity of rows and a multiplicity of columns, with each cell located in one of the rows being coupled to a common word

A memory system capable of being configured for optimum operation after fabrication and method of controlling same. The system includes an array of memory cells arranged in a multiplicity of rows and a multiplicity of columns, with each cell located in one of the rows being coupled to a common word line and with each cell located in one of the columns being coupled to a common bit line. Control circuitry is included for controlling memory operations, with the memory operations including programming the memory cells; reading the memory cells and preferably programming the cells. A plurality of non-volatile data storage units are provided for storing control parameter data used by the control means for controlling the memory operations. Such control parameters may can include, for example, parameters for adjusting the magnitude and duration of voltage pulses applied to the memory for carrying out programming and erasing operations.

대표청구항 ▼

[ I claim:] [1.] A memory system comprising:an array of memory cells arranged in a multiplicity of rows and a multiplicity of columns, with each cell being located in one of the rows and each cell being located in one of the columns;a control for controlling memory operations, with the operations in

[ I claim:] [1.] A memory system comprising:an array of memory cells arranged in a multiplicity of rows and a multiplicity of columns, with each cell being located in one of the rows and each cell being located in one of the columns;a control for controlling memory operations, with the operations including programming the memory cells and reading the memory cells, with the memory operations being controlled in response to control parameters; anddata storage structures for storing the control parameters in a non-volatile manner, with the storage structures being separate from the array of memory cells.