초록

A semiconductor device structure having a semiconductor device on a substrate with a layer of benzocyclobutane (BCB) disposed about the device with a via between the top surface of the BCB and the device is disclosed. A bond pad is in contact with the via and is connected to a bond ribbon.

대표청구항 ▼

[ We claim:] [1.] A reduced parasitic capacitance schottky barrier device, comprising:a substrate on which is disposed a layer of selectively doped semiconductor material; a layer of barrier metal disposed on said layer of semiconductor material; a layer of BCB disposed above said substrate and abou

[ We claim:] [1.] A reduced parasitic capacitance schottky barrier device, comprising:a substrate on which is disposed a layer of selectively doped semiconductor material; a layer of barrier metal disposed on said layer of semiconductor material; a layer of BCB disposed above said substrate and about said semiconductor layer and said barrier metal layer; a via having electrically conductive material disposed therein, said via disposed between a top surface of said BCB and said barrier metal layer; and a bond pad disposed on said top surface of BCB about said via and in electrical contact with said barrier metal by way of said electrically conductive material disposed in said via.