초록 ▼

The inventive SRAM cell has a poly-load resistor which comprises a thick supply voltage (Vcc) interconnect, a thick driver interconnect on a thin load resistance region which is electrically connected to both interconnects. The novel poly-load resistor overcomes the problem of lateral diffusion from

The inventive SRAM cell has a poly-load resistor which comprises a thick supply voltage (Vcc) interconnect, a thick driver interconnect on a thin load resistance region which is electrically connected to both interconnects. The novel poly-load resistor overcomes the problem of lateral diffusion from the interconnect regions into the load region. The resulting SRAM cell has a low Vcc interconnect resistance.

대표청구항 ▼

[ We claim:] [1.] A method for forming a load resistance for an SRAM cell comprising the steps of:(a) depositing an inter-poly-dielectric layer over a MOS driver device formed on a semiconductor substrate, and patterning said inter-poly-dielectric layer to form one or more via openings therein,(b) d

[ We claim:] [1.] A method for forming a load resistance for an SRAM cell comprising the steps of:(a) depositing an inter-poly-dielectric layer over a MOS driver device formed on a semiconductor substrate, and patterning said inter-poly-dielectric layer to form one or more via openings therein,(b) depositing a thick polysilicon layer on the surface of said inter-polydielectric layer,(c) uniformly doping said thick polysilicon layer with a first ion implantation,(d) patterning said thick polysilicon layer to form a driver interconnect region which connects to said driver device through said one or more via openings in said inter-poly-dielectric layer, and to form a supply voltage interconnect region,(e) depositing a thin polysilicon layer over said driver interconnect and supply voltage interconnect regions and over a portion of said inter-polydielectric layer between said driver interconnect and supply voltage interconnect regions, and(f) uniformly doping said thin polysilicon layer with a second ion implantation to form a load resistance region in electrical contact with said driver interconnect and supply voltage interconnect regions.