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Method and apparatus for chemical mechanical polishing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-005/00
출원번호 US-0939689 (1997-09-29)
발명자 / 주소
  • Doran Daniel B.
출원인 / 주소
  • LSI Logic Corporation
대리인 / 주소
    Yee
인용정보 피인용 횟수 : 91  인용 특허 : 11

초록

A method and apparatus provides a method for polishing a surface of a substrate with a polishing pad. The surface of the substrate is polished using the polishing pad. The surface of the substrate is deformed in response to changes in the polishing pad, wherein deformation of the surface of the subs

대표청구항

[ What is claimed is:] [1.] A method for polishing a surface of a substrate with a polishing pad, wherein the polishing pad has a shape, the method comprising:polishing the surface of the substrate using the polishing pad;detecting changes in the shape of the polishing pad; anddeforming the surface

이 특허에 인용된 특허 (11)

  1. Shendon Norman (San Carlos CA), Chemical mechanical polishing apparatus with improved carrier and method of use.
  2. Siddall Graham J. (Woodside CA), Deformable chuck driven by piezoelectric means.
  3. MacDonald Bruce G. (San Diego CA) Hunter ; Jr. Robert O. (Rancho Santa Fe CA) Smith Adlai H. (San Diego CA), Deformable wafer chuck.
  4. Inoue Takashi (Sakai JPX) Nagano Hiroyuki (Katano JPX) Ishii Yoshimichi (Neyagawa JPX), Exposure method and exposure apparatus.
  5. Akiyama Nobuyuki (Yokohama JPX) Kembo Yukio (Yokohama JPX) Nakagawa Yasuo (Yokohama JPX) Aiuchi Susumu (Yokohama JPX) Nomoto Mineo (Yokohama JPX), Light exposure device and method.
  6. Taniguchi Motoya (Kamakura JPX) Kuni Asahiro (Tokyo JPX) Funatsu Ryuichi (Yokohama JPX) Kembo Yukio (Yokohama JPX) Inagaki Akira (Yokohama JPX), Light-exposure apparatus.
  7. Cote William J. (Poughquag NY) Lofaro Michael F. (Milton NY), Method and apparatus for uniform polishing of a substrate.
  8. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Method and structure for polishing a wafer during manufacture of integrated circuits.
  9. Tanaka Kouichi (Nishigo-mura JPX) Hashimoto Hiromasa (Nishigo-mura JPX) Suzuki Fumio (Taishin-mura JPX), Method of polishing semiconductor wafers and apparatus therefor.
  10. Sandhu Gurtej S. (Boise ID) Doan Trung Tri (Boise ID), System for real-time control of semiconductor wafer polishing including heater.
  11. Huber Anton (Burghausen DEX) Weiss Robert (Winhoring DEX), Workpiece holder for rotary grinding machines for grinding semiconductor wafers, and method of positioning the workpiece.

이 특허를 인용한 특허 (91)

  1. Michael J. Berman ; Jayashree Kalpathy-Cramer, Apparatus and method for linearly planarizing a surface of a semiconductor wafer.
  2. Allman, Derryl D. J.; Gregory, John W., Apparatus and method for planarizing the surface of a semiconductor wafer.
  3. Daniel David W. ; Gregory John W. ; Allman Derryl D. J., Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance.
  4. Damon Vincent Williams, Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing.
  5. Bright, Nicolas; Hemker, David J., Apparatus and methods for controlling wafer temperature in chemical mechanical polishing.
  6. Kistler, Rodney; Hemker, David J.; Gotkis, Yehiel; Owczarz, Aleksander; Morel, Bruno; Williams, Damon V., Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control.
  7. Brown, Nathan R., Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane.
  8. Williams, Damon Vincent, Apparatus for controlling retaining ring and wafer head tilt for chemical mechanical polishing.
  9. Bright,Nicolas; Hemker,David J., Apparatus for controlling wafer temperature in chemical mechanical polishing.
  10. Taravade Kunal N., Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method.
  11. Bright,Nicolas; Hemker,David J., Apparatus methods for controlling wafer temperature in chemical mechanical polishing.
  12. Jayanthi Pallinti ; Ron Nagahara, Arrangement and method for polishing a surface of a semiconductor wafer.
  13. Pallinti, Jayanthi; Nagahara, Ron, Arrangement and method for polishing a surface of a semiconductor wafer.
  14. Berman Michael J., Automated inspection system for residual metal after chemical-mechanical polishing.
  15. Yamaguchi, Kuniaki; Mizuno, Toshio; Kobata, Itsuki, Buffing apparatus, and substrate processing apparatus.
  16. Stephen C. Schultz ; John D. Herb ; Nikolay N. Korovin, Carrier having pistons for distributing a pressing force on the back surface of a workpiece.
  17. Chen Hung Chih, Carrier head to apply pressure to and retain a substrate.
  18. Chen Hung Chih, Carrier head to apply pressure to and retain a substrate.
  19. Saldana, Miguel A.; Williams, Damon Vincent, Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head.
  20. Kirchner Eric J. ; Kalpathy-Cramer Jayashree, Chemical-mechanical polishing pad conditioning systems.
  21. Berman, Michael J., Determination of film thickness during chemical mechanical polishing.
  22. Nagahara Ronald J. ; Lee Dawn M., Effective pad conditioning.
  23. Gail D. Shelton ; Gayle W. Miller, Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.
  24. Shelton Gail D. ; Miller Gayle W., Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.
  25. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.
  26. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.
  27. Shanmugasundram, Arulkumar P.; Schwarm, Alexander T.; Prabhu, Gopalakrishna B., Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles.
  28. Molnar, Charles J., Finishing components and elements.
  29. Charles J Molnar, Finishing semiconductor wafers with a fixed abrasive finishing element.
  30. GanapathiSubramanian, Mahadevan; Choi, Byung-Jin; Meissl, Mario Johannes, Imprint lithography system and method.
  31. Osugi Richard S. ; Nagahara Ronald J. ; Lee Dawn M., In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation.
  32. Seliskar John J. ; Allman Derryl D. J. ; Gregory John W. ; Yakura James P. ; Kwong Dim Lee, Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region.
  33. Burke, Peter A.; Kirchner, Eric J.; Elmer, James R. B., Integrated circuit process monitoring and metrology system.
  34. Brown, Nathan R., Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane.
  35. Brown, Nathan R., Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane.
  36. Brown, Nathan R., Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane.
  37. Brown, Nathan R., Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane.
  38. Brown,Nathan R., Method and apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane.
  39. Hiroshi Mizuno JP; Osamu Kinoshita JP; Tetsuaki Murohashi JP; Akihisa Ueno JP; Yoshifumi Sakuma JP; Kostas Amberiadis, Method and apparatus for chemical-mechanical polishing.
  40. Berman Michael J. ; Holland Karey L., Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing.
  41. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.
  42. Derryl D. J. Allman ; David W. Daniel ; John W. Gregory, Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.
  43. Allman Derryl D. J. ; Daniel David W. ; Chisholm Michael F., Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer.
  44. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a polishing endpoint based upon infrared signals.
  45. Taravade Kunal N., Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer.
  46. Miller Gayle W. ; Chisholm Michael F., Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer.
  47. Michael J. Berman, Method and apparatus for enhancing uniformity during polishing of a semiconductor wafer.
  48. John Gregory, Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom.
  49. Nagahara Ronald J. ; Lee Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.
  50. Nagahara, Ronald J.; Lee, Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.
  51. Herold,Volker; Weber,Christian Toralf; Weiser,Juergen, Method and device for the high-precision machining of the surface of an object, especially for polishing and lapping semiconductor substrates.
  52. Tsen, Yen-Di; Yen-Wei, Cheng; Mou, Jong-I, Method and/or system for chemical mechanical planarization (CMP).
  53. James J. Xie ; Jayanthi Pallinti ; Ronald J. Nagahara, Method for CMP endpoint detection.
  54. Hsia Shouli Steve ; Wang Yanhua ; Pallinti Jayanthi, Method for shallow trench isolations with chemical-mechanical polishing.
  55. Anderson, II, Robert L.; Charatan, Robert, Method of and platen for controlling removal rate characteristics in chemical mechanical planarization.
  56. Miller Gayle W. ; Shelton Gail D. ; Chisholm Brynne K., Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie.
  57. Williams, Damon Vincent, Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing.
  58. Kistler, Rodney; Hemker, David J.; Gotkis, Yehiel; Owczarz, Aleksander; Morel, Bruno; Williams, Damon V., Methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control.
  59. Walker Michael A. ; Robinson Karl M., Methods of forming trench isolation regions.
  60. Walker Michael A. ; Robinson Karl M., Methods of polishing materials, methods of slowing a rate of material removal of a polishing process.
  61. Michael A. Walker ; Karl M. Robinson, Methods of polishing materials, methods of slowing a rate of material removal of a polishing process, and methods of forming trench isolation regions.
  62. Powell, Jr., John W., Methods providing control for electro-permanent magnetic devices and related electro-permanent magnetic devices and controllers.
  63. Owczarz, Alek; Boyd, John; Kistler, Rod, Methods using active retainer rings for improving edge performance in CMP applications.
  64. Ishikawa, Toshihiko; Katagiri, Yasushi, Planarization apparatus and method.
  65. Toshihiko Ishikawa JP; Yasushi Katagiri JP, Planarization apparatus and method.
  66. Dunton Samuel V. ; Lee Ming-Yi, Planarization system.
  67. Owczarz, Alek; Boyd, John; Kistler, Rod, Platen design for improving edge performance in CMP applications.
  68. Kiermasz,Adrian; Saldana,Miguel A., Platen with diaphragm and method for optimizing wafer polishing.
  69. Saldana,Miguel A.; Williams,Damon Vincent, Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head.
  70. Fukushima, Dai; Takayasu, Jun; Watanabe, Takashi, Polishing apparatus and polishing method.
  71. Park,Moo Yong; Hah,Sang Rok; Kim,Jong Gyoon; Son,Hong Seong; Han,Ja Hyung, Polishing apparatus and related polishing methods.
  72. Park,Moo Yong; Hah,Sang Rok; Kim,Jong Gyoon; Son,Hong Seong; Han,Ja Hyung, Polishing apparatus and related polishing methods.
  73. Gotcher Leland F., Polishing chucks, semiconductor wafer polishing chucks, abrading method, polishing methods, semiconductor wafer polishing methods, and methods of forming polishing chucks.
  74. Leland F. Gotcher, Polishing chucks, semiconductor wafer polishing chucks, abrading methods, polishing methods, semiconductor wafer polishing methods, and methods of forming polishing chucks.
  75. Leland F. Gotcher, Polishing chucks, semiconductor wafer polishing chucks, abrading methods, polishing methods, semiconductor wafer polishing methods, and methods of forming polishing chucks.
  76. Nyui, Masaru; Ban, Mikichi, Polishing method and polishing apparatus using the same.
  77. Nagahara Ronald J. ; Lee Dawn M., Polishing pad surface for improved process control.
  78. Kistler, Rod; Boyd, John; Owczarz, Alek, Pressurized membrane platen design for improving performance in CMP applications.
  79. Dawn M. Lee ; Jayanthi Pallinti ; Weidan Li ; Ming-Yi Lee, Process for CMP removal of excess trench or via filler metal which inhibits formation of concave regions on oxide surface of integrated circuit structure.
  80. Pallinti, Jayanthi; Lee, Dawn M.; Nagahara, Ronald J., Process for forming planarized isolation trench in integrated circuit structure on semiconductor substrate.
  81. Nagahara, Ronald J.; Pallinti, Jayanthi; Lee, Dawn Michelle, Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures.
  82. Ronald J. Nagahara ; Jayanthi Pallinti ; Dawn Michelle Lee, Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures.
  83. Nagahara, Ronald J.; Xie, James J.; Ueno, Akihisa; Pallinti, Jayanthi, Process for selective polishing of metal-filled trenches of integrated circuit structures.
  84. Katrina A. Mikhaylich ; John M. Boyd, Sacrificial retaining ring CMP system and methods for implementing the same.
  85. Shouli Steve Hsia ; Yanhua Wang ; Jayanthi Pallinti, Shallow trench isolation chemical-mechanical polishing process.
  86. Berman Michael J., Slurry filling a recess formed during semiconductor fabrication.
  87. Saldana, Miguel A.; Boyd, John M.; Gotkis, Yehiel; Owczarz, Aleksander A., Subaperture chemical mechanical polishing system.
  88. Allman, Derryl D. J.; Gregory, John W., Substrate planarization with a chemical mechanical polishing stop layer.
  89. Kistler, Rod; Gotkis, Yehiel, System and method for controlled polishing and planarization of semiconductor wafers.
  90. Boyd, John M.; Gotkis, Yehiel; Kistler, Rod, System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques.
  91. Boyd, John M.; Gotkis, Yehiel; Kistler, Rod, System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques.
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