초록 ▼

A floating gate field effect transistor (FET) is provided on a semiconductor-on-insulator (SOI) or silicon-on-insulator structure. The silicon substrate is etched to form stepped structures upon which the transistors are formed. Layers of silicon substrate can be stacked upon each other to form a mu

A floating gate field effect transistor (FET) is provided on a semiconductor-on-insulator (SOI) or silicon-on-insulator structure. The silicon substrate is etched to form stepped structures upon which the transistors are formed. Layers of silicon substrate can be stacked upon each other to form a multi-layer system. Interlayer vias can be provided to connect each layer of the two-layer structure.

대표청구항 ▼

[ What is claimed is:] [1.] A flash memory integrated circuit, comprising:a first semiconductor-on-insulator layer including a first insulating layer above a first conductive layer above a first semiconductor substrate above a first floating gate above a first control gate above a second insulating

[ What is claimed is:] [1.] A flash memory integrated circuit, comprising:a first semiconductor-on-insulator layer including a first insulating layer above a first conductive layer above a first semiconductor substrate above a first floating gate above a first control gate above a second insulating layer, the first semiconductor substrate containing a first channel region situated above the first floating gate; anda second semiconductor-on-insulator layer including a third insulating layer above a second conductive layer above a second semiconductor substrate above a second floating gate, above a second control gate above a fourth insulating layer, the second semiconductor substrate containing a second channel region situated above the second floating gate, the fourth insulating layer being in contact with the first insulating layer, wherein the first semiconductor substrate is stacked below the second semiconductor substrate.