[특허]Adjusting DC bias voltage in plasma chambers

Adjusting DC bias voltage in plasma chambers 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H05H-001/00
출원번호	US-0666981 (1996-06-20)
발명자 / 주소	Shan Hong Ching Lee Evans Yip Welch Michael D Wu Robert W Pu Bryan Luscher Paul Ernest Carducci James David Blume Richard
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Stern
인용정보	피인용 횟수 : 77 인용 특허 : 27

초록 ▼

A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

대표청구항 ▼

[ We claim:] [1.] A plasma chamber for fabricating semiconductor devices, comprising:(a) a plasma chamber;(b) a gas inlet for receiving a gas into the chamber;(c) plasma excitation means for exciting the gas to a plasma state;(d) an exhaust port through which gas can be exhausted from the chamber;(e) a vacuum pump, connected to the exhaust port, for exhausting gas from the chamber; and(f) an exhaust baffle having a number of sinuous passages, wherein(i) the baffle overlies the exhaust port so that gas exhausted from the chamber passes though the sinuous passages, and(ii) each passage is sufficiently long and sinuous that any plasma inside the chamber does not extend completely through the passage.

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Shan Hongching (San Jose CA) Lee Evans (Milpitas CA) Wu Robert (Pleasanton CA), Adjustable dc bias control in a plasma reactor.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Adjusting DC bias voltage in plasma chambers 원문보기

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Adjusting DC bias voltage in plasma chambers 원문보기

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