초록 ▼

A process for growing a single crystal comprises providing a single crystal substrate acting as a seed crystal above a source material in a container, heating the source material in an inert gas atmosphere in the container to form a sublimed source material, and discharging the sublimed source mater

A process for growing a single crystal comprises providing a single crystal substrate acting as a seed crystal above a source material in a container, heating the source material in an inert gas atmosphere in the container to form a sublimed source material, and discharging the sublimed source material from the container through a port above the single crystal substrate, to cause the sublimed source material to flow along and in parallel with a surface of the single crystal substrate, and grow a single crystal on the surface of the single crystal substrate.

대표청구항 ▼

[ We claim:] [1.] A process for growing a single crystal, comprising:placing a source material and a single crystal substrate in an inert gas atmosphere, said single crystal substrate including a seed crystal and having a surface on which a single crystal is to be grown;heating said source material

[ We claim:] [1.] A process for growing a single crystal, comprising:placing a source material and a single crystal substrate in an inert gas atmosphere, said single crystal substrate including a seed crystal and having a surface on which a single crystal is to be grown;heating said source material to form a sublimed source material; andcausing said sublimed source material to flow generally parallel along the surface of said single crystal substrate to thereby grow a single crystal on the surface of said single crystal substrate.