초록 ▼

Single crystals of binary and ternary compounds of alkaline earth and a chalcogen, with or without a transition element, are grown by: charging a reaction vessel with an alkaline earth chalcogenide, with or without a transition element or a halide thereof, an acidic mineralizer, and anhydrous ammoni

Single crystals of binary and ternary compounds of alkaline earth and a chalcogen, with or without a transition element, are grown by: charging a reaction vessel with an alkaline earth chalcogenide, with or without a transition element or a halide thereof, an acidic mineralizer, and anhydrous ammonia to where the fill factor in the reaction vessel is 30-95%; sealing the reaction vessel to the outside atmosphere; heating the contents of the reaction vessel to a temperature of at least 300.degree. C. until single crystal materials visible to the eye form in the reaction vessel; cooling the contents of the reaction vessel; and extracting the single crystal materials from the reaction vessel.

대표청구항 ▼

[ What I claim is:] [1.] A process comprising the steps of(a) charging, with or without seed crystals to nucleate growth, into a reaction vessel having a temperature difference between its ends of at least 1.degree. C. a divalent metal chalcogenide or components thereof, with or without a transition

[ What I claim is:] [1.] A process comprising the steps of(a) charging, with or without seed crystals to nucleate growth, into a reaction vessel having a temperature difference between its ends of at least 1.degree. C. a divalent metal chalcogenide or components thereof, with or without a transition element or a halide thereof, the divalent metal is selected from the group consisting of alkaline earths, Group 12 elements of the Periodic Table, europium, and mixtures thereof; sufficient amount of an acid mineralizer to form a single crystal material; and sufficient amount of ammonia to at least solubilize the chalcogenide, with or without a transition element of Groups 4-11 or a halide thereof; to a fill factor of 30-95%, based on the volume of the contents of the reaction vessel;(b) sealing the reaction vessel;(c) heating contents of the reaction vessel to at least 300.degree. C. for a duration sufficient to form single crystal divalent metal chalcogenide, with or without a transition element;(d) cooling contents of the reaction vessel;(e) removing from the reaction vessel the single crystals of the divalent metal chalcogenide, with or without a transition element, or a transition metal chalcogenide.