[특허]Vapour phase chemical infiltration process for densifying porous substrates disposed in annular stacks

[미국특허] Vapour phase chemical infiltration process for densifying porous substrates disposed in annular stacks 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/26
출원번호	US-0945325 (1997-10-15)
우선권정보	FR-0004586 (1995-04-18)
국제출원번호	PCT/FR96/00582 (1996-04-17)
§371/§102 date	19971015 (19971015)
국제공개번호	WO-9633295 (1996-10-24)
발명자 / 주소	Christin Fran.cedilla.ois,FRX Daubigny Pierre,FRX Delaurens Pierre,FRX Leluan Jean-Luc,FRX
출원인 / 주소	Societe Europeenne de Propulsion, FRX
대리인 / 주소	Weingarten, Schurgin, Gagnebin & Hayes LLP
인용정보	피인용 횟수 : 32 인용 특허 : 3

초록 ▼

A chemical vapor infiltration method for densifying porous substrates disposed in annular stacks. The substrates to be densified (12) are loaded inside a reaction chamber (11) of an infiltration oven, being disposed in at least one annular stack (30) defining an interior passage (31) with spaces (33) being formed between the substrates. The gas admitted into the reaction chamber is channelled on leaving a preheating zone (18) towards one of the two volumes constituted by the inside and the outside of the, or each, stack of substrates, and preferably towards the smaller volume. This volume (31) is closed at its opposite end so that the gas flows from admission into the chamber to its exhaust from the chamber from the inside to the outside of the, or each, stack, or vice versa, with the gas passing through the spaces between the substrates and diffusing into them.

대표청구항 ▼

[ We claim:] [1.] A chemical vapor infiltration method for densifying porous substrates by depositing material within the substrates, the method comprising:loading substrates to be densified into a reaction chamber of an infiltration oven, with the substrates being disposed in at least one annular or hollow stack which extends in a longitudinal direction of the chamber and which defines an interior passage;admitting a gas containing at least a precursor of the material to be deposited into the reaction chamber in the vicinity of a first longitudinal end thereof;channeling the admitted gas towards only one of the two volumes constituted by the interior passage of the at least one stack and the outside of the at least one stack, at the end of said stack closer to said first longitudinal end of the chamber, with the volume into which the gas is channeled being closed at its end farther from said first longitudinal end of the chamber; andexhausting residual gas via an outlet situated in the vicinity of a second longitudinal end of said chamber opposite from said first longitudinal end;wherein said substrates are stacked while leaving spaces between the substrates which open into the interior passage and the outside of said at least one stack to allow pressure to be balanced therebetween, whereby said channeled gas is caused to flow from the interior passage to the outside of said at least one stack, or vice versa, with the gas passing through the spaces between the substrates and diffusing into them.

이 특허에 인용된 특허 (3) 인용/피인용 타임라인 분석

Rigney David V. (Cincinnati OH), Apparatus and method for gas phase coating of hollow articles.
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Rudolph James W. (Colorado Springs CO) Purdy Mark J. (Akron OH) Bok Lowell D. (Anna OH), Apparatus for use with CVI/CVD processes.
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Golecki Ilan (Parsippany NJ) Morris Robert C. (Ledgewood NJ) Narasimhan Dave (Flemington NJ), Method of rapidly densifying a porous structure.
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이 특허를 인용한 특허 (32) 인용/피인용 타임라인 분석

Delperier, Bernard; Potin, Jean-François; Soulignac, Sophie, CVI densification installation including a high capacity preheating zone.
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Warnes, Bruce M.; Purvis, Andrew L.; Near, Daniel L., Chemical vapor deposition apparatus and method.
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Warnes, Bruce M.; Purvis, Andrew L.; Near, Daniel L., Chemical vapor deposition apparatus and method.
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Arico,Alan A.; Parker,David E.; Waghray,Akshay; Miller,Brian; Shaw,David W., Chemical vapor deposition method.
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Goujard,St？phane; Bernard,Bruno; Richard,Jean Philippe, Chemical vapor infiltration method for densifying porous substrates having a central passage.
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Delperier, Bernard; Domblides, Jean-Luc; Richard, Jean-Philippe; Delaurens, Pierre, Densifying hollow porous substrates by chemical vapor infiltration.
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Grossmann Valentin,DEX ; Pillhoefer Horst,DEX ; Thoma Martin,DEX, Device and method for preparing and/or coating the surfaces of hollow construction elements.
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Bertrand, Sébastien; Lamouroux, Franck; Goujard, Stéphane, Device for loading porous substrates of three-dimensional shape in order to be densified by directed flow chemical vapor infiltration.
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Corman Gregory Scot, Fiber coating method.
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Corman, Gregory Scot, Fiber coating method.
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Daws, David E.; Rudolph, James W.; Zeigler, Dary; Bazshushtari, Afshin, Hardware assembly for CVI/CVD processes.
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Goujard, Stephane; Bertrand, Sebastien; Delcamp, Adrien; Beauvais, Franck, Loader device and an installation for densifying stackable frustoconical porous preforms.
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Murata, Hiroshige; Shioda, Muneyoshi; Nakamura, Takeshi, Method and apparatus for manufacturing ceramic-based composite member.
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Donet, Sebastien; Emieux, Fabrice; Filhol, Lionel; Thollon, Stephanie, Method and device for the infiltration of a structure of a porous material by chemical vapour deposition.
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Bernard, Bruno; Goujard, Stéphane; Bertrand, Sébastien, Method and installation for the densification of substrates by means of chemical vapor infiltration.
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Sion, Eric; Baudry, Yvan; Delperier, Bernard, Method for densifying porous substrates by chemical vapour infiltration with preheated gas.
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Rudolph,James W.; Daws,David E.; Zeigler,Dary; Bazshushtari,Afshin, Method for measurement of weight during a CVI/CVD process.
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Hegermann, Rainer; Goetz, Philipp, Method for the chemical vapor infiltration of refractive substances.
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Chang, Kenny; Loisy, Patrick; Baudry, Yvan, Method of densifying porous articles.
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Lamouroux, Franck; Bertrand, Sébastien; Goujard, Stéphane; Caillaud, Alain; Bagilet, Francis; Mazereau, Stéphane, Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates.
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Lamouroux, Franck; Bertrand, Sébastien; Goujard, Stéphane; Caillaud, Alain; Bagilet, Francis; Mazereau, Stéphane, Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates.
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Jouin, Jean-Marie; Lherm, Eric; Turgis, Philippe, Method of fabricating a friction part based on C/C composite material.
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Georges, Jean-Michel; Benethuiliere, Daniel; Philippe, Eric, Method of manufacturing a thermostructural composite material bowl, in particular for an installation that produces silicon single crystals.
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Rudolph, James Warren; She, Ying; Dardas, Zissis A.; Filburn, Thomas P.; St. Rock, Brian; Linck, John, Methods for modifying pressure differential in a chemical vapor process.
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Rudolph, James W.; Fry, Vincent, Non-pressure gradient single cycle CVI/CVD apparatus and method.
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Rudolph, James W.; Fry, Vincent R., Non-pressure gradient single cycle CVI/CVD apparatus and method.
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Chang,Kenny H., One piece shim.
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Baud, Sandrine; Jacquemard, Pascale; Pailler, René; Rollin, Magali; Podgorski, Michaël, Part based on C/C composite material, and a method of fabricating it.
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Rudolph,James W.; Perea,Paul T.; Linck,John S.; Kirkpatrick,Chris T.; Jones,Richard, Pressure gradient CVI/CVD apparatus and method.
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Ikejiri, Takashi, Surface treatment apparatus and surface treatment method.
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She, Ying; St. Rock, Brian, System and method for enhancing a diffusion limited CVI/CVD process.
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Sung, Su-Jen, Systems and methods for uniform gas flow in a deposition chamber.
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[미국특허] Vapour phase chemical infiltration process for densifying porous substrates disposed in annular stacks 원문보기