초록 ▼

A heterojunction bipolar transistor (20) is provided with a silicon (Si) base region (34) that forms a semiconductor junction with a multilayer emitter (38) having a thin gallium arsenide (GaAs) emitter layer (36) proximate the base region (34) and a distal gallium phosphide emitter layer (40). The

A heterojunction bipolar transistor (20) is provided with a silicon (Si) base region (34) that forms a semiconductor junction with a multilayer emitter (38) having a thin gallium arsenide (GaAs) emitter layer (36) proximate the base region (34) and a distal gallium phosphide emitter layer (40). The GaAs emitter layer (36) is sufficiently thin, preferably less than 200 .ANG., so as to be coherently strained.

대표청구항 ▼

[ What is claimed is:] [10.] A heterojunction bipolar transistor comprising:a silicon (Si) collector region of a first conductivity type;a Si base region of a second conductivity type formed adjacent to said collector region;a first non-silicon layer epitaxially grown over and in contact with said S

[ What is claimed is:] [10.] A heterojunction bipolar transistor comprising:a silicon (Si) collector region of a first conductivity type;a Si base region of a second conductivity type formed adjacent to said collector region;a first non-silicon layer epitaxially grown over and in contact with said Si base region so as to form an emitter-base transistor junction that is substantially free of interdiffusion, said first non-silicon layer forming a first portion of a multilayer emitter; anda second non-silicon layer epitaxially grown over said first non-silicon layer, said second non-silicon layer exhibiting said first conductivity type and a bandgap wider than silicon, and said second non-silicon layer forming a second portion of said multilayer emitter.