초록 ▼

A method for forming semiconductor device (1) that includes providing a substrate (10) having a metal interconnect (12), depositing a via interlevel dielectric (ILD) layer (20) over the substrate (10) and the metal interconnect (12), etching the via ILD layer (20) to form a via (30) over the metal i

A method for forming semiconductor device (1) that includes providing a substrate (10) having a metal interconnect (12), depositing a via interlevel dielectric (ILD) layer (20) over the substrate (10) and the metal interconnect (12), etching the via ILD layer (20) to form a via (30) over the metal interconnect (12), depositing a trench ILD layer (32) over the via ILD layer (12) and the via (30), etching the trench ILD layer (32) to form a trench (40), the trench (40) being contiguous with the via (12), and depositing a metal (44) so as to fill the via (30) and the trench (40), and provide electrical connection with the metal interconnect (12).

대표청구항 ▼

[ What is claimed is:] [1.] A method for forming a semiconductor device comprising the steps of:providing a substrate having a metal interconnect;depositing a via interlevel dielectric layer over the substrate and the metal interconnect;etching the via interlevel dielectric layer to form a via over

[ What is claimed is:] [1.] A method for forming a semiconductor device comprising the steps of:providing a substrate having a metal interconnect;depositing a via interlevel dielectric layer over the substrate and the metal interconnect;etching the via interlevel dielectric layer to form a via over the metal interconnect;depositing a trench interlevel dielectric layer over the via interlevel dielectric layer and the via;etching the trench interlevel dielectric layer to form a trench, the trench being contiguous with the via; anddepositing a metal so as to fill the via and the trench, and provide electrical connection with the metal interconnect.